CN106130545B - A kind of automatic biasing PLL ruggedized construction of Anti-single particle radiation - Google Patents
A kind of automatic biasing PLL ruggedized construction of Anti-single particle radiation Download PDFInfo
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- CN106130545B CN106130545B CN201610430735.7A CN201610430735A CN106130545B CN 106130545 B CN106130545 B CN 106130545B CN 201610430735 A CN201610430735 A CN 201610430735A CN 106130545 B CN106130545 B CN 106130545B
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- 239000002245 particle Substances 0.000 title claims abstract description 54
- 238000010276 construction Methods 0.000 title claims abstract description 20
- 230000005855 radiation Effects 0.000 title claims abstract description 19
- 230000000694 effects Effects 0.000 claims abstract description 41
- 239000003990 capacitor Substances 0.000 claims description 21
- 230000003471 anti-radiation Effects 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 230000003321 amplification Effects 0.000 abstract description 7
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 7
- 238000004458 analytical method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 101100263704 Arabidopsis thaliana VIN3 gene Proteins 0.000 description 2
- 101100540498 Arabidopsis thaliana VIP4 gene Proteins 0.000 description 2
- 101100540499 Arabidopsis thaliana VIP5 gene Proteins 0.000 description 2
- 101000953492 Homo sapiens Inositol hexakisphosphate and diphosphoinositol-pentakisphosphate kinase 1 Proteins 0.000 description 2
- 101000953488 Homo sapiens Inositol hexakisphosphate and diphosphoinositol-pentakisphosphate kinase 2 Proteins 0.000 description 2
- 102100037739 Inositol hexakisphosphate and diphosphoinositol-pentakisphosphate kinase 1 Human genes 0.000 description 2
- 102100037736 Inositol hexakisphosphate and diphosphoinositol-pentakisphosphate kinase 2 Human genes 0.000 description 2
- 101100102627 Oscarella pearsei VIN1 gene Proteins 0.000 description 2
- 101150077913 VIP3 gene Proteins 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
- H03L7/089—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses
- H03L7/0891—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses the up-down pulses controlling source and sink current generators, e.g. a charge pump
- H03L7/0893—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses the up-down pulses controlling source and sink current generators, e.g. a charge pump the up-down pulses controlling at least two source current generators or at least two sink current generators connected to different points in the loop
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
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- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Abstract
The present invention relates to a kind of automatic biasing PLL ruggedized construction of Anti-single particle radiation, automatic biasing PLL ruggedized construction is by differentiating that single particle effect is to V in non-reinforced automatic biasing PLLBACKThe influence of signal, the automatic biasing generation circuit sensitive to single particle effect are reinforced, and the V for capableing of anti-single particle effect is obtainedBACKRSignal；And decide by vote the small signal of the first voltage controlled oscillator output after amplification, then through voting machine, export stable PLL output signal.The present invention has better anti-single particle effect capability compared with non-reinforced automatic biasing PLL, and can satisfy the demand of aerospace applications.
Description
Technical field
The present invention relates to phaselocked loop (PLL) circuit, the automatic biasing PLL ruggedized constructions of especially a kind of Anti-single particle radiation.
Background technique
When electronic device works in space, the bombardment of high energy proton, high-energy neutron and universe heavy ion will receive.It hits
Itself, and the secondary generated is hit, all electron hole pair can be ionized on body silicon；When the amount of charge of ionization accumulation reaches
When to certain magnitude, disturbance can be generated to circuit state.Such as: the transient pulse in the storage bit flipping of class unit, combinational logic
Deng these effects are commonly referred to as single particle effect.
Under large scale process conditions, influence of the single particle effect to circuit is mainly shown as single-particle inversion, main shadow
Ring the circuit with storage organization.And for small size, circuit not only will receive the influence of Single event upset effecf, equally
It will receive the influence of single-ion transient state disturbance effect.Stability that above two effect applies electronic device in space and can
Huge threat is produced by property.
Many circuit structure researchs in relation to single particle effect Design of Reinforcement have been expanded in the world.Into deep-submicron
After technique, how under the conditions of seldom occupying system power dissipation and area, the ability of device anti-single particle effect is improved, is always
The emphasis that everybody pays close attention to.
With the continuous improvement of circuit level, phaselocked loop (Phase-Locked-Loop, PLL) has become in circuit
Indispensable module.In aerospace applications, the temporary disturbance that single particle effect generates can make PLL circuit losing lock, influence entire
The stability of circuit system.
As shown in Figure 1, being non-reinforced automatic biasing PLL circuit structure chart.Automatic biasing PLL is to generate one using feedback biasing
Mutual conductance forms the equivalent transconductance cancellation of zero point and voltage controlled oscillator, thus obtain a natural frequency, damped coefficient and technique,
Power supply, temperature are unrelated, to multiplier parameter N at weak relevant phaselocked loop.Automatic biasing PLL circuit is by phase frequency detector (PFD) 1,
The 2, second charge pump of one charge pump (CP1) (CP2) 3, automatic biasing generation circuit (Bias Gen) 41, voltage controlled oscillator (VCO) 5,
First capacitor C1 and the second capacitor C2 composition.Wherein CLKIN is input reference level, and PLL output signal passes through phase frequency detector 1
Compared with CLKIN signal carries out frequency and phase, U1/D1, U2/D2 signal are exported to the first charge pump 2 and the second charge pump
3, first capacitor C1 and the second capacitor C2 is passed through in the output of two groups of charge pumps, inputs VBIAS biasing to automatic biasing generation circuit 41
Signal.Automatic biasing generation circuit 41 generates VBACK signal and feeds back to the first charge pump 2 and the second charge pump 3, for controlling first
The charge and discharge of charge pump 2 and the second charge pump 3.Meanwhile automatic biasing generation circuit 41 generates VBP, VBN signal to voltage controlled oscillator
5.Voltage controlled oscillator 5 is made of the first to the 5th delay unit and amplifier, the small letter that amplifier exports the 5th delay unit
After number amplification, final PLL output is formed.
As shown in Fig. 2, being the 5 internal circuit configuration figure of voltage controlled oscillator of non-reinforced automatic biasing PLL circuit.Voltage controlled oscillator
5 by the first delay unit 51, the second delay unit 52, third delay unit 53, the 4th delay unit 54, the 5th delay unit 55
And amplifier 56 forms.First delay unit 51 input VIP1 meets the output VOP5 of the 5th delay unit 55, and VIN1 connects the 5th and prolongs
The output VON5 of Shi Danyuan 55.Second delay unit 52 input VIP2 meets the output VOP1 of the first delay unit 51, and VIN2 connects the
The output VON1 of one delay unit 51.Third delay unit 53 inputs the output VOP2, VIN3 that VIP3 connects the second delay unit 52
Meet the output VON2 of the second delay unit 52.4th delay unit 54 input VIP4 meets the output VOP3 of third delay unit 53,
VIN4 meets the output VON3 of third delay unit 53.5th delay unit 55 input VIP5 connects the output of the 4th delay unit 54
VOP4, VIN5 meet the output VON4 of the 4th delay unit 54.Output VOP5 and the VON5 signal of 5th delay unit 55 is used as and puts
The differential input signal that big device 56 inputs, two signals ultimately form PLL output after amplification.
It as in Figure 3-5, is VBACK signal in non-reinforced automatic biasing PLL and the analysis of VBN, VBP signal single particle effect
Figure.Such as Fig. 3, after VBACK signal is influenced by single particle effect, PLL output is lost two pulse letters compared with CLKIN
Number, illustrate that VBACK signal is sensitive to single particle effect.Such as Fig. 4, after VBN signal is influenced by single particle effect, PLL output
It is lost a pulse signal compared with CLKIN, also illustrates that VBN signal is sensitive to single particle effect.Such as Fig. 5, when VBP signal by
After influencing to single particle effect, PLL output has the duty ratio of a pulse signal to become very severe compared with CLKIN, almost
It cannot be used by circuit, equally illustrate that VBP signal is also very sensitive to single particle effect.
Summary of the invention
The technical problem to be solved by the present invention is in aerospace environment in application, automatic biasing PLL is by single particle effect shadow
It rings, so that circuit performance deteriorates, losing lock, provides a kind of automatic biasing PLL ruggedized construction of Anti-single particle radiation, which has more
Good anti-single particle effect capability, and can satisfy the demand of aerospace applications.
In order to solve the above-mentioned technical problems, the present invention provides the following technical solutions:
A kind of automatic biasing PLL ruggedized construction of Anti-single particle radiation of the present invention, automatic biasing PLL ruggedized construction is by sentencing
Single particle effect is to V in not non-reinforced automatic biasing PLLBACKThe influence of signal, the automatic biasing sensitive to single particle effect generate electricity
Road is reinforced, and the V for capableing of anti-single particle effect is obtainedBACKRSignal；And the small signal of the first voltage controlled oscillator output is passed through
After amplification, then by voting machine voting, export stable PLL output signal.
Further, automatic biasing PLL ruggedized construction include phase frequency detector, the first charge pump, the second charge pump, first from
Offset generating circuit, the second automatic biasing generation circuit, third automatic biasing generation circuit, the first voltage controlled oscillator, first capacitor C1
With the second capacitor C2, by differentiating that single particle effect is to V in non-reinforced automatic biasing PLLBACKThe influence of signal, selection is suitably certainly
It biases PLL circuit and exports electric current, using the first, second, third automatic biasing generation circuit, make the V of feedbackBACKRVoltage is in single-particle
It keeps stablizing in radiation environment, makes the first charge pump and the second charge pump to the charge and discharge electric energy of first capacitor C1 and the second capacitor C2
Trying hard to keep, it is fixed to keep steady, and makes the output signal V of the first, second, third automatic biasing generation circuitBNRAnd VBPRIt keeps stablizing, to make the
The input biasing of one voltage controlled oscillator keeps stablizing.
Further, the first voltage controlled oscillator includes the first delay unit, the second delay unit, third delay unit, the
Four delay units, the 5th delay unit, the first amplifier, the second amplifier, third amplifier and voting machine, it is single to the 5th delay
The signal VOP5 and VON5 of member output is amplified by the first, second, third amplifier, exports the amplified signal in three tunnels,
Decide by vote using voting machine, exports final PLL output signal.
Beneficial effects of the present invention:
1, compared with non-reinforced automatic biasing PLL, automatic biasing PLL ruggedized construction improves circuit and works in aerospace environment
Reliability, ensure that losing lock will not occur when being influenced by single particle effect for automatic biasing PLL circuit.
2, automatic biasing PLL ruggedized construction is by finding out node sensitive to single particle effect in circuit, and differentiates simple grain
Sub- effect is to VBACKThe influence of signal, and then suitable automatic biasing PLL circuit is selected to export electric current；Simultaneously to the first voltage controlled oscillation
Three tunnel votings are carried out after device output low level signal amplification；Compared with the PLL of global triplication redundancy Design of Reinforcement, smaller face is used
Long-pending and power consumption, and reached identical consolidation effect.
Detailed description of the invention
Fig. 1 is non-reinforced automatic biasing PLL circuit structure chart；
Fig. 2 is the voltage controlled oscillator internal circuit configuration figure of non-reinforced automatic biasing PLL circuit；
Fig. 3 is VBACK signal single particle effect analysis chart in non-reinforced automatic biasing PLL；
Fig. 4 is VBN signal single particle effect analysis chart in non-reinforced automatic biasing PLL；
Fig. 5 is VBP signal single particle effect analysis chart in non-reinforced automatic biasing PLL；
Fig. 6 is a kind of automatic biasing PLL ruggedized construction figure of Anti-single particle radiation of the present invention；
Fig. 7 is a kind of first voltage controlled oscillator internal junction of the automatic biasing PLL ruggedized construction of Anti-single particle radiation of the present invention
Composition.
Specific embodiment
Embodiment cited by the present invention, is merely used to help understand the present invention, should not be construed as protecting model to the present invention
The restriction enclosed for those skilled in the art without departing from the inventive concept of the premise, can also be right
The present invention makes improvements and modifications, these improvement and modification are also fallen into the range of the claims in the present invention protection.
The invention will be further described below in conjunction with the accompanying drawings.
As shown in fig. 6, for a kind of automatic biasing PLL ruggedized construction figure of Anti-single particle radiation of the present invention；Automatic biasing PLL adds
Fixing structure includes phase frequency detector 1, the first charge pump 2, the second charge pump 3, the first automatic biasing generation circuit 42, the second automatic biasing
Generation circuit 43, third automatic biasing generation circuit 44, the first voltage controlled oscillator 6, first capacitor C1 and the second capacitor C2.Wherein
CLKIN is input reference level, and PLL output signal carries out the ratio of frequency and phase by phase frequency detector 1 and CLKIN signal
Compared with exporting U1/D1, U2/D2 signal to the first charge pump 2 and the second charge pump 3, first capacitor is passed through in the output of two groups of charge pumps
C1 and the second capacitor C2, to the first automatic biasing generation circuit 42, the second automatic biasing generation circuit 43, third automatic biasing generation circuit
44 input VBIAS offset signals.To make the first automatic biasing generation circuit 42, the second automatic biasing generation circuit 43, third self-bias
Set generation circuit 44 generate be not susceptible to single particle effect disturbance VBACKR signal feed back to the first charge pump 2 and the second charge
Pump 3, for controlling the charge and discharge of the first charge pump 2 and the second charge pump 3.Meanwhile first automatic biasing generation circuit 42, second from
Offset generating circuit 43, third automatic biasing generation circuit 44 generate VBNR, VBPR signal to the first voltage controlled oscillator 6.First pressure
Oscillator 6 is controlled to include the first to the 5th delay unit 51,52,53,54,55, first to third amplifier 61,62,63 and decide by vote
Device 64 after first low level signal amplification for exporting the 5th delay unit 55 to third amplifier 61,62,63, passes through voting machine 64
Voting forms final anti-radiation automatic biasing PLL output.
As shown in fig. 7, for a kind of first voltage controlled oscillator of the automatic biasing PLL ruggedized construction of Anti-single particle radiation of the present invention
6 internal structure charts；First voltage controlled oscillator 6 includes the first delay unit 51, the second delay unit 52, third delay unit
53, the 4th delay unit 54, the 5th delay unit 55 and the first amplifier 61, the second amplifier 62, third amplifier 63, voting
Device 64.First delay unit 51 input VIP1 meets the output VOP5 of the 5th delay unit 55, and VIN1 connects the 5th delay unit 55
Export VON5.The output VOP1, VIN2 that second delay unit 52 input VIP2 connects the first delay unit 51 connect the first delay unit
51 output VON1.The output VOP2, VIN3 that the input of third delay unit 53 VIP3 connects the second delay unit 52 connect the second delay
The output VON2 of unit 52.4th delay unit 54 input VIP4 meets the output VOP3 of third delay unit 53, and VIN4 connects third
The output VON3 of delay unit 53.5th delay unit 55 input VIP5 meets the output VOP4 of the 4th delay unit 54, and VIN5 connects
The output VON4 of 4th delay unit 54.Output VOP5 and the VON5 signal of 5th delay unit 55 amplify as first to third
The differential input signal that device 61,62,63 inputs, two signals export respective waveform after amplification, are passing through voting machine 64
Voting forms final anti-radiation automatic biasing PLL output.
The working principle of the invention:
The present invention is utilized by differentiating influence of the single particle effect to VBACK signal in non-reinforced automatic biasing PLL, Jin Erxuan
Select suitable automatic biasing PLL circuit output electric current makes to feed back using the first, second, third automatic biasing generation circuit 42,43,44
VBACKR voltage keep stablizing in single-particle radiation environment, and then stabilize the first charge pump 2 and the second charge pump 3 to the
The charging and discharging capabilities of one capacitor C1 and the 2nd C2 make the output signal of the first, second, third automatic biasing generation circuit 42,43,44
VBNR and VBPR keeps stablizing, so that the input biasing of the first voltage controlled oscillator 6 be made to keep stablizing.Meanwhile using first, second,
42,43,44 structure of third automatic biasing generation circuit avoids influence of the single particle effect to single automatic biasing generation circuit and involves
The stabilization of entire pll system.
Meanwhile deciding by vote after being amplified to the small signal of the first voltage controlled oscillator 6 output, the 5th delay unit 55 is exported
Signal VOP5 and VON5 amplified by the first, second, third amplifier 61,62,63, export the amplified letter in three tunnels
Number, decide by vote using voting machine 64, export final PLL output signal, it is unstable right to export so as to avoid single amplifier
It is influenced caused by PLL.
The present invention radiates emulation technology using single-particle, and the automatic biasing PLL for devising a kind of Anti-single particle radiation reinforces knot
Structure.Compared with non-reinforced automatic biasing PLL, which is designed by the radiation hardened to circuit, to have better anti-simple grain
Sub- effect capability, and can satisfy the demand of aerospace applications.The present invention is by differentiating single particle effect in non-reinforced automatic biasing PLL
Influence to VBACK signal so that the automatic biasing generation circuit sensitive to single particle effect is reinforced obtains that simple grain can be resisted
The VBACKR signal of sub- effect.Meanwhile to the small signal of the first voltage controlled oscillator 6 output after amplifier amplifies, then pass through
Voting machine is put to the vote, it is ensured that the stabilization of output signal guarantees to improve the ability of automatic biasing PLL anti-single particle effect
Automatic biasing PLL not losing lock in radiation environment.
Claims (3)
1. a kind of automatic biasing PLL ruggedized construction of Anti-single particle radiation, it is characterised in that: the automatic biasing PLL ruggedized construction packet
Include (1) first charge pump (2) of phase frequency detector, the second charge pump (3), the first automatic biasing generation circuit (42), the second automatic biasing
Generation circuit (43), third automatic biasing generation circuit (44), the first voltage controlled oscillator (6), first capacitor C1 and the second capacitor C2；
Wherein, the first input end of the phase frequency detector (1) connects reference level CLKIN, the second input termination first pressure
Control the PLL signal of oscillator (6) output；The phase frequency detector (1) exports U1/D1 signal to the first charge pump (2), output
U2/D2 signal gives the second charge pump (3)；First capacitor C1 and the second capacitor C2 are passed through in the output of two groups of charge pumps respectively, to
One automatic biasing generation circuit (42), the second automatic biasing generation circuit (43), third automatic biasing generation circuit (44) input biasing letter
Number, the first automatic biasing generation circuit (42), the second automatic biasing generation circuit (43), third automatic biasing generation circuit (44) generate not
It is easy the V disturbed by single particle effectBACKSignal feeds back to the first charge pump (2) and the second charge pump (3), for controlling first
The charge and discharge of charge pump (2) and the second charge pump (3)；Meanwhile the first automatic biasing generation circuit (42), the second automatic biasing generate electricity
Road (43), third automatic biasing generation circuit (44) generate VBNR、VBPRSignal is to the first voltage controlled oscillator (6), the first voltage-controlled vibration
It swings device (6) and exports anti-radiation automatic biasing PLL signal.
2. the automatic biasing PLL ruggedized construction of Anti-single particle radiation according to claim 1, it is characterised in that: the self-bias
Setting PLL ruggedized construction includes phase frequency detector (1), the first charge pump (2), the second charge pump (3), the first automatic biasing generation circuit
(42), the second automatic biasing generation circuit (43), third automatic biasing generation circuit (44), the first voltage controlled oscillator (6), first capacitor
C1 and the second capacitor C2, by differentiating that single particle effect is to V in non-reinforced automatic biasing PLLBACKThe influence of signal, selection are suitable
Automatic biasing PLL circuit exports electric current, using the first, second, third automatic biasing generation circuit (42,43,44), makes the V of feedbackBACKR
Voltage keeps stablizing in single-particle radiation environment, makes the first charge pump (2) and the second charge pump (3) to first capacitor C1 and the
The charging and discharging capabilities of two capacitor C2 keep stablizing, and believe the output of the first, second, third automatic biasing generation circuit (42,43,44)
Number VBNRAnd VBPRIt keeps stablizing, so that the first voltage controlled oscillator (6) input biasing be made to keep stablizing.
3. the automatic biasing PLL ruggedized construction of Anti-single particle radiation according to claim 1, it is characterised in that: described first
Voltage controlled oscillator (6) includes the first delay unit (51), the second delay unit (52), third delay unit (53), the 4th delay
Unit (54), the 5th delay unit (55), the first amplifier (61), the second amplifier (62), third amplifier (63) and voting
Device (64), to the 5th delay unit (55) output signal VOP5 and VON5 by the first, second, third amplifier (61,62,
63) it amplifies, exports the amplified signal in three tunnels, decide by vote using voting machine (64), export final PLL output signal.
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| CN106849943A (en) * | 2016-12-21 | 2017-06-13 | 西安空间无线电技术研究所 | A kind of VCO biasing circuits of alleviation SET effects |
| CN113032222B (en) * | 2021-04-13 | 2022-10-28 | 浙江威固信息技术有限责任公司 | Solid state disk resistant to single event functional interruption |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1383243A1 (en) * | 2002-07-19 | 2004-01-21 | Sun Microsystems, Inc. | Locked Loop Circuit Design with Diode for Loop Filter Capacitance Leakage Current Control |
| WO2004010583A1 (en) * | 2002-07-19 | 2004-01-29 | Sun Microsystems, Inc. | Loop filter capacitor leakage current control |
| WO2008138929A1 (en) * | 2007-05-16 | 2008-11-20 | Texas Instruments Deutschland Gmbh | Ring oscillator for plls |
| CN101594145A (en) * | 2008-05-26 | 2009-12-02 | 中芯国际集成电路制造(上海)有限公司 | Self-biased phase-locked loop |
| CN102075183A (en) * | 2009-11-24 | 2011-05-25 | 中国科学院微电子研究所 | Fully-integrated self-biased fast-locking phase-locked loop frequency synthesizer |
| CN102136840A (en) * | 2011-04-22 | 2011-07-27 | 上海宏力半导体制造有限公司 | Automatic biasing phase-locked loop |
| CN105634477A (en) * | 2015-12-24 | 2016-06-01 | 电子科技大学 | Self-biasing phase locked loop circuit with high phase noise performance |
| CN105634475A (en) * | 2015-12-24 | 2016-06-01 | 西安电子科技大学 | Loop oscillation type phase-locked loop for charge pump |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6922047B2 (en) * | 2003-05-29 | 2005-07-26 | Intel Corporation | Startup/yank circuit for self-biased phase-locked loops |
-
2016
- 2016-06-17 CN CN201610430735.7A patent/CN106130545B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1383243A1 (en) * | 2002-07-19 | 2004-01-21 | Sun Microsystems, Inc. | Locked Loop Circuit Design with Diode for Loop Filter Capacitance Leakage Current Control |
| WO2004010583A1 (en) * | 2002-07-19 | 2004-01-29 | Sun Microsystems, Inc. | Loop filter capacitor leakage current control |
| WO2008138929A1 (en) * | 2007-05-16 | 2008-11-20 | Texas Instruments Deutschland Gmbh | Ring oscillator for plls |
| CN101594145A (en) * | 2008-05-26 | 2009-12-02 | 中芯国际集成电路制造(上海)有限公司 | Self-biased phase-locked loop |
| CN102075183A (en) * | 2009-11-24 | 2011-05-25 | 中国科学院微电子研究所 | Fully-integrated self-biased fast-locking phase-locked loop frequency synthesizer |
| CN102136840A (en) * | 2011-04-22 | 2011-07-27 | 上海宏力半导体制造有限公司 | Automatic biasing phase-locked loop |
| CN105634477A (en) * | 2015-12-24 | 2016-06-01 | 电子科技大学 | Self-biasing phase locked loop circuit with high phase noise performance |
| CN105634475A (en) * | 2015-12-24 | 2016-06-01 | 西安电子科技大学 | Loop oscillation type phase-locked loop for charge pump |
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