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CN105390150A - Storage device - Google Patents

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Publication number
CN105390150A
CN105390150A CN201510873051.XA CN201510873051A CN105390150A CN 105390150 A CN105390150 A CN 105390150A CN 201510873051 A CN201510873051 A CN 201510873051A CN 105390150 A CN105390150 A CN 105390150A
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CN
China
Prior art keywords
storage medium
conducting strip
circuit board
heat
memory device
Prior art date
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Pending
Application number
CN201510873051.XA
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Chinese (zh)
Inventor
王海峰
胡光升
曲中江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Huawei Technologies Co Ltd
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Xian Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Huawei Technologies Co Ltd filed Critical Xian Huawei Technologies Co Ltd
Priority to CN201510873051.XA priority Critical patent/CN105390150A/en
Publication of CN105390150A publication Critical patent/CN105390150A/en
Pending legal-status Critical Current

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Abstract

The invention provides a storage device. The storage device comprises a base plate, a storage medium plate and at least one heat conduction sheet, wherein the storage medium plate is arranged on the base plate, and the surface of the storage medium plate is provided with a storage medium array; and the heat conduction sheet is connected with the surface of at least part of storage medium in the storage medium array via heat-conducting glue. According to the invention, the heat conduction sheet is connected with the surface of the storage medium via the heat-conducting glue, the contact area between the heat conduction sheet and the storage medium is improved indirectly, the heat conduction sheet can transfer heat from the storage medium of higher temperature to the storage medium of lower temperature more effectively, and a batter heat balancing effect can be achieved.

Description

Memory device
Technical field
The embodiment of the present invention relates to memory storage field, and more specifically, relates to a kind of memory device.
Background technology
Along with the fast development of computer technology, the capacity requirement of people to memory device is increasing, in order to increase the capacity of memory device, a lot of memory device all adopts structure as shown in Figure 1, this memory device comprises base plate, base plate is provided with storage medium plate, the surface of storage medium plate is provided with multiple storage medium array.Adopt the memory device shown in Fig. 1 can make the distribution more crypto set of storage medium, thus the capacity of memory device can be improved.This memory device because storage medium generally can not work simultaneously, therefore, there will be the problem that local storage medium temperature is too high in practical work process, will affect the normal work of memory device like this.
In order to solve above-mentioned memory device Problems existing, prior art with the addition of graphite flake between storage medium array, utilize the good heat conductive performance of graphite flake that heat is passed to the lower storage medium of temperature from the storage medium that temperature is higher, thus solve the too high problem of local storage medium temperature, realize the soaking to storage medium.But because the thickness of graphite flake is less, elasticity is poor, and surface also has certain roughness, be therefore difficult to surface graphite flake being entirely attached to storage medium, the contact area of such graphite flake and storage medium is just smaller; In addition, because there is certain tolerance in the gap between storage medium, the gap between each storage medium is different, like this when placing graphite sheet, is difficult to ensure that graphite flake has good contact with the surface of multiple storage medium; Therefore, the graphite flake in memory device of the prior art and the contact area of storage block less, well the heat that storage medium produces can not be distributed, be difficult to reach preferably all thermal effects.
Summary of the invention
The object of the application is to provide the memory device after improvement, to improve the equal thermal effect of memory device.First aspect, the application provides a kind of memory device.Described memory device comprises base plate; Storage medium plate, described storage medium plate is arranged on described base plate, and the surface of described storage medium plate is provided with storage medium array; At least one conducting strip, at least one conducting strip described is connected by the surface of heat-conducting glue with at least part of storage medium in described storage medium array.
Conducting strip in the embodiment of the present invention is connected by the surface of heat-conducting glue with at least part of storage medium, the heat produced when storage medium can be worked by memory device first passes to heat-conducting glue, and then pass to conducting strip by heat-conducting glue, finally by conducting strip, the heat that storage medium produces is passed again, and the contact area of conducting strip of the prior art and storage medium is less, the poor effect of heat trnasfer, and the memory device of the embodiment of the present invention makes conducting strip indirectly have good contact with storage medium by heat-conducting glue, indirectly improve the contact area of conducting strip and storage medium, heat can be passed to the lower storage medium of temperature from the storage medium that temperature is higher, better equal thermal effect can be reached.
According to first aspect, in the first possible implementation of first aspect, described storage medium plate is dual inline memory module DIMM, and described DIMM comprises: first circuit board, and described first circuit board is connected with described base plate; Second circuit board, described second circuit board is connected by flexible connecting plate with described first circuit board, and the inside surface of the inside surface of described second circuit board and described first circuit board is oppositely arranged; At least one conducting strip described comprises: the first conducting strip, described first conducting strip is arranged between described first circuit board and described second circuit board, and described first conducting strip is connected with the storage medium on the inside surface of described second circuit board with described first circuit board by the heat-conducting glue be filled between described first circuit board and described second circuit board.
According to the first possible implementation of first aspect, in the implementation that the second of first aspect is possible, at least one conducting strip described also comprises: the second conducting strip, described second conducting strip is arranged on the outside of described first circuit board, and described second conducting strip is connected with the storage medium on the outside surface of described first circuit board with the heat-conducting glue between described first circuit board by being filled in described second conducting strip.
According to first aspect, in the third possible implementation of first aspect, at least one conducting strip described comprises the 3rd conducting strip and the 4th conducting strip, and described 3rd conducting strip and described 4th conducting strip are oppositely arranged with the inside surface of described storage medium plate and outside surface respectively; Wherein, described 3rd conducting strip is connected with the storage medium on the inside surface of described storage medium array with the heat-conducting glue between described storage medium plate by being filled in described 3rd conducting strip, and described 4th conducting strip is connected with the storage medium on the outside surface of described storage medium array with the heat-conducting glue between described storage medium plate by being filled in described 4th conducting strip.
According to the first of first aspect or first aspect to any one in the third possible implementation, in the 4th kind of possible implementation of first aspect, described base plate is provided with slot, and described storage medium plate is connected with described board electrical by described slot.
In some implementation, above-mentioned slot can be dimm socket, the position that above-mentioned DIMM is connected with dimm socket comprises two golden fingers, this golden finger can realize the electrical interconnection of storage medium and base plate, may be used for transmission signal between storage medium and storage system, like this, system directive can pass to storage medium by base plate, thus realizes the control of system to storage medium.
In some implementation, above-mentioned memory device comprises multiple storage medium plate, and the plurality of storage medium plate is disposed side by side on described base plate.
In some implementation, the heat conduction auxiliary material that above-mentioned heat-conducting glue can be able to solidify for casting glue or thermally conductive gel etc., heat conduction auxiliary material has good deformation behavior, can be filled in the space between storage block or be attached to the surface of storage medium.Any conducting strip at least one conducting strip above-mentioned is graphene film, graphite flake or copper sheet.Specifically, when heat-conducting glue adopts casting glue, during conducting strip employing graphene film, the heat that storage medium passes over can be passed to graphene film rapidly by casting glue, because the horizontal heat transfer coefficient of graphene film is very high, the heat that casting glue passes over can be rapidly to by it around to spread, and this makes it possible to heat to pass to the lower storage medium of temperature from the storage medium that temperature is higher, thus achieves the soaking of storage medium.
In some implementation, above-mentioned storage medium can be flash chip, also can be that other have the chip of memory function.In addition, above-mentioned memory device can also comprise wind-cooling heat dissipating module, and this wind-cooling heat dissipating module installation is in base plate bottom.The ventilation effect to storage medium array can be strengthened by wind-cooling heat dissipating module, thus reduce the temperature of this storage medium array, thus be conducive to heat-conducting glue the heat of storage block is passed to conducting strip rapidly, then promptly the heat of storage block higher for temperature is passed to the lower storage block of temperature by conducting strip, all thermal effects can be reached better like this.
In some implementation, above-mentioned memory device can also comprise metal frame, and this metal frame is fixed on the surface of storage medium plate.Because the heat conductivility of metal is better, therefore by arranging this metal frame, the heat of storage medium can be distributed rapidly, reduce the temperature of this storage medium, so just be conducive to heat-conducting glue and the heat of storage medium is passed to conducting strip rapidly, then promptly the heat of storage medium higher for temperature is passed to the lower storage medium of temperature by conducting strip, to reach better all thermal effects.
In the embodiment of the present invention, conducting strip is connected with the surface of storage medium by heat-conducting glue, indirectly improve the contact area of conducting strip and storage medium, make conducting strip better heat can be passed to the lower storage medium of temperature from the storage medium that temperature is higher, all thermal effects can be reached better.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, be briefly described to the accompanying drawing used required in the embodiment of the present invention below, apparently, accompanying drawing described is below only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic diagram of existing memory device.
Fig. 2 is the schematic diagram of the memory device of the embodiment of the present invention.
Fig. 3 is the schematic diagram of the memory device of the embodiment of the present invention.
Fig. 4 is the schematic diagram of the memory device of the embodiment of the present invention.
Fig. 5 is the schematic diagram of the memory device of the embodiment of the present invention.
Fig. 6 is the schematic diagram of the memory device of the embodiment of the present invention.
Fig. 7 is the schematic diagram of the memory device of the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Fig. 2 is the schematic diagram of the memory device of the embodiment of the present invention.As shown in Figure 2, this memory device comprises base plate; Storage medium plate, this storage medium plate is arranged on which floor plate, and the surface of this storage medium plate is provided with storage medium array; At least one conducting strip, this at least one conducting strip is connected by the surface of heat-conducting glue with at least part of storage medium in this storage medium array.
The base plate that should be understood that the memory device of the embodiment of the present invention can comprise fixed sturcture, and storage medium battle array plate is arranged on base plate by this fixed sturcture.Alternatively, this fixed sturcture can be slot, and like this, storage medium plate just can realize being electrically connected by slot and base plate, and more specifically, this slot can be dimm socket (as shown in Figure 2).At this moment storage medium array can be plugged on this dimm socket.Here heat-conducting glue can be curable heat conduction auxiliary material, and it fully can contact with the surface of storage block, and the heat produced when being worked by storage medium passes to conducting strip rapidly.Like this, conducting strip is just connected by the surface of heat-conducting glue with at least part of storage medium in storage medium array, and is distributed by the heat that storage medium produces.
Alternatively, the position that this storage medium plate is plugged on slot also comprises golden finger (as shown in Figure 2), the electrical interconnection with base plate just can be realized like this by the golden finger storage medium in slot, this golden finger may be used for transmission signal between storage medium and storage system, like this, system directive can pass to storage medium by base plate, thus realizes the control of system to storage medium.
When memory device normally works, when storage system issuing command reads the data of storage medium by base plate to above-mentioned storage medium plate, storage medium can produce certain heat, in general, the storage medium that different system directive meetings is corresponding different, and all storage mediums can not work simultaneously.So just may there is the work of part storage medium, and the idle state of other parts storage medium, or the heat that part storage medium operationally produces is more, and the heat that the storage medium of other parts operationally produces is less, such storage medium plate operationally just there will be the too high problem of the temperature of part storage medium.And the heat that the memory device of the embodiment of the present invention produces when storage medium can be worked first passes to heat-conducting glue, and then pass to conducting strip by heat-conducting glue, finally by conducting strip, the heat that storage medium produces is passed again, and the contact area of conducting strip of the prior art and storage medium is less, the poor effect of heat trnasfer, and the memory device of the embodiment of the present invention makes conducting strip indirectly have good contact with storage medium by heat-conducting glue, heat can be passed to the lower storage medium of temperature from the storage medium that temperature is higher, better equal thermal effect can be reached.
In the embodiment of the present invention, conducting strip is connected with the surface of storage medium by heat-conducting glue, indirectly improve the contact area of conducting strip and storage medium, make conducting strip better heat can be passed to the lower storage medium of temperature from the storage medium that temperature is higher, all thermal effects can be reached better.
Alternatively, as an embodiment, as shown in Figure 3, this storage medium plate is dual inline memory module DIMM, and this DIMM comprises: first circuit board, and this first circuit board is connected with this base plate; Second circuit board, this second circuit board is connected by flexible connecting plate with this first circuit board, and the inside surface of the inside surface of this second circuit board and this first circuit board is oppositely arranged; This at least one conducting strip comprises: the first conducting strip, this first conducting strip is arranged between this first circuit board and this second circuit board, and this first conducting strip is connected with the storage medium on the inside surface of this second circuit board with this first circuit board by the heat-conducting glue be filled between this first circuit board and this second circuit board.Should understand, when filling heat-conducting glue, mould can be utilized to be arranged between this first circuit board and this second circuit board by the first conducting strip, and do not contact with the storage medium on second circuit board with first circuit board, then heat-conducting glue is filled between first circuit board and second circuit board, the first conducting strip is connected with the storage medium on the inside surface of this second circuit board with this first circuit board by heat-conducting glue.
Alternatively, as an embodiment, as shown in Figure 4, at least one conducting strip above-mentioned also comprises: the second conducting strip, this the second conducting strip is arranged on the outside of this first circuit board, and this second conducting strip is connected with the storage medium on the outside surface of this first circuit board by the heat-conducting glue be filled between this second conducting strip with this first circuit board.As shown in Figure 4, first conducting strip can be arranged on the conducting strip between this first circuit board and this second circuit board, second conducting strip can also be two conducting strips, when the second conducting strip is two, conducting strip can be two conducting strips in the outside being separately positioned on first circuit board and second circuit board.
Should understand, when storage medium plate is DIMM, conducting strip can be one also can be multiple, when conducting strip is one, conducting strip can be arranged between first circuit board and this second circuit board, also can be arranged on the outside of one of them circuit board, when conducting strip is multiple, conducting strip both can be arranged between first circuit board and this second circuit board, can be arranged on again the outside of at least one circuit board in first circuit board and second circuit board.Like this, conducting strip can have better contact with the storage medium on more storage medium plate, and the heat that storage medium produces can pass by conducting strip sooner more rapidly, thus can realize the soaking of storage medium quickly.
Alternatively, as an embodiment, as shown in Figure 5, at least one conducting strip above-mentioned comprises the 3rd conducting strip and the 4th conducting strip, and the 3rd conducting strip and the 4th conducting strip are oppositely arranged with the inside surface of this storage medium plate and outside surface respectively; Wherein, 3rd conducting strip is connected with the storage medium on the inside surface of this storage medium array by being filled in the heat-conducting glue between the 3rd conducting strip with this storage medium plate, and the 4th conducting strip is connected with the storage medium on the outside surface of this storage medium array by being filled in the heat-conducting glue between the 4th conducting strip with this storage medium plate.Should understand, before filling heat-conducting glue, can first utilize mould that the 3rd conducting strip and the 4th conducting strip are separately positioned on two sides of storage medium plate, and do not contact with the storage medium on storage medium plate, then heat-conducting glue is filled in the 3rd conducting strip and the 4th space of conducting strip respectively and between storage medium plate.3rd conducting strip is connected with the storage medium on the outside surface of this storage medium array by heat-conducting glue with the 4th conducting strip.
Alternatively, as an embodiment, this memory device can comprise multiple storage medium plate, and the plurality of storage medium plate is disposed side by side on base plate.Specifically, the plurality of storage medium plate can be fixed on floor by slot, and other mode also can be adopted to be fixed on base plate.
Alternatively, as an embodiment, as shown in Figure 6, the memory device of the embodiment of the present invention can also comprise anchor post, and this anchor post is vertically arranged on base plate, and storage medium plate level is fixed on this anchor post, this storage medium plate comprises multiple circuit board, this circuit board is provided with storage medium array, one end of multiple circuit board is fixed on this anchor post, and one end that the plurality of circuit board is fixed on anchor post is connected by flexible connecting plate.Should be understood that the storage medium plate level of this memory device is fixed on base plate, and this memory board does not contact with base plate.The more crypto set that storage medium can be disposed by the memory device shown in Fig. 6 is to increase the capacity of memory device, equally, heat-conducting glue only can cover the surface of the part storage medium in multiple storage medium, also the surface of all storage mediums can be covered, the mode that conducting strip is connected with the surface of storage medium by heat-conducting glue also has a variety of mode, such as, conducting strip is arranged between multiple circuit board, and heat-conducting glue is filled in the space between described multiple circuit board.
Alternatively, as an embodiment, any conducting strip at least one conducting strip above-mentioned is the heat-conducting medium that graphene film, graphite flake or copper sheet etc. have high thermal conductivity coefficient.The heat conduction auxiliary material that heat-conducting glue can be able to solidify for casting glue or thermally conductive gel etc., heat conduction auxiliary material has good deformation behavior, can fill in space between storage media or be attached to the surface of storage block.Specifically, when heat-conducting glue adopts casting glue, during conducting strip employing graphene film, because casting glue and storage medium have good contact, the heat that storage medium produces is easy to pass to casting glue.Because casting glue has short distance heat transfer soon, the feature of vertical direction heat transfer block, therefore, the heat that storage block passes over can be passed to graphene film rapidly by casting glue, because the horizontal heat transfer coefficient of graphene film is up to 5000W/mK, the heat that casting glue passes over can be rapidly to by it around to spread, and this makes it possible to heat to pass to the lower storage block of temperature from the storage medium that temperature is higher, thus achieves the soaking of storage medium.In addition, casting glue has good insulating property, thus can not with the solder joint on storage medium plate or other shorted devices, do not affect the normal work of the storage medium in storage medium plate.In figs. 3 and 4, conducting strip can be positioned at the inside of heat-conducting glue, that is with heat-conducting glue, conducting strip is covered, ensure that conducting strip wraps by heat-conducting glue simultaneously, directly contact with storage medium to avoid conducting strip, in manufacturing process, in order to install conducting strip smoothly, the thickness of conducting strip is less than the distance between two storage blocks.
Alternatively, as an embodiment, storage block here can be the storage medium be made up of flash memory, also can be that other have the chip of memory function.Such as, storage medium here can be flash chip.
Alternatively, as an embodiment, this memory device can also comprise wind-cooling heat dissipating module, and this wind-cooling heat dissipating module installation is in base plate bottom.The ventilation effect to storage medium plate can be strengthened by wind-cooling heat dissipating module, thus reduce the temperature of this storage medium plate, thus be conducive to heat-conducting glue the heat of storage medium is passed to conducting strip rapidly, then promptly the heat of storage medium higher for temperature is passed to the lower storage medium of temperature by conducting strip, all thermal effects can be reached better like this.
Alternatively, as an embodiment, as shown in Figure 7, above-mentioned memory device can also comprise metal frame, and this metal frame is fixed on the surface of storage medium plate.Because the heat conductivility of metal is better, therefore by arranging this metal frame, the heat of storage medium plate can be distributed rapidly, reduce the temperature of this storage medium array, so just be conducive to heat-conducting glue and the heat of storage medium is passed to conducting strip rapidly, then rapidly the heat of storage medium higher for temperature is passed to the lower storage medium of temperature by conducting strip, to reach better all thermal effects.
Alternatively, the flexible connecting plate of the appearance in above-mentioned memory device, base plate can be made up of printed circuit board (PCB) (PrintedCircuitBoard, PCB).Above-mentioned DIMM also can Based PC B and storage medium make.
Those of ordinary skill in the art can recognize, in conjunction with unit and the algorithm steps of each example of embodiment disclosed herein description, can realize with the combination of electronic hardware or computer software and electronic hardware.These functions perform with hardware or software mode actually, depend on application-specific and the design constraint of technical scheme.Professional and technical personnel can use distinct methods to realize described function to each specifically should being used for, but this realization should not thought and exceeds scope of the present invention.
Those skilled in the art can be well understood to, and for convenience and simplicity of description, the specific works process of the system of foregoing description, device and unit, with reference to the corresponding process in preceding method embodiment, can not repeat them here.
In several embodiments that the application provides, should be understood that disclosed system, apparatus and method can realize by another way.Such as, device embodiment described above is only schematic, such as, the division of described unit, be only a kind of logic function to divide, actual can have other dividing mode when realizing, such as multiple unit or assembly can in conjunction with or another system can be integrated into, or some features can be ignored, or do not perform.Another point, shown or discussed coupling each other or direct-coupling or communication connection can be by some interfaces, and the indirect coupling of device or unit or communication connection can be electrical, machinery or other form.
The described unit illustrated as separating component or can may not be and physically separates, and the parts as unit display can be or may not be physical location, namely can be positioned at a place, or also can be distributed in multiple network element.Some or all of unit wherein can be selected according to the actual needs to realize the object of the present embodiment scheme.
In addition, each functional unit in each embodiment of the present invention can be integrated in a processing unit, also can be that the independent physics of unit exists, also can two or more unit in a unit integrated.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; change can be expected easily or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should described be as the criterion with the protection domain of claim.

Claims (10)

1. a memory device, is characterized in that, comprising:
Base plate;
Storage medium plate, described storage medium plate is arranged on described base plate, and the surface of described storage medium plate is provided with storage medium array;
At least one conducting strip, at least one conducting strip described is connected by the surface of heat-conducting glue with at least part of storage medium in described storage medium array.
2. memory device as claimed in claim 1, it is characterized in that, described storage medium plate is dual inline memory module DIMM, and described DIMM comprises:
First circuit board, described first circuit board is connected with described base plate;
Second circuit board, described second circuit board is connected by flexible connecting plate with described first circuit board, and the inside surface of the inside surface of described second circuit board and described first circuit board is oppositely arranged;
At least one conducting strip described comprises:
First conducting strip, described first conducting strip is arranged between described first circuit board and described second circuit board, and described first conducting strip is connected with the storage medium on the inside surface of described second circuit board with described first circuit board by the heat-conducting glue be filled between described first circuit board and described second circuit board.
3. memory device as claimed in claim 2, it is characterized in that, at least one conducting strip described also comprises:
Second conducting strip, described second conducting strip is arranged on the outside of described first circuit board, and described second conducting strip is connected with the storage medium on the outside surface of described first circuit board with the heat-conducting glue between described first circuit board by being filled in described second conducting strip.
4. memory device as claimed in claim 1, it is characterized in that, at least one conducting strip described comprises the 3rd conducting strip and the 4th conducting strip, and described 3rd conducting strip and described 4th conducting strip are oppositely arranged with the inside surface of described storage medium plate and outside surface respectively;
Wherein, described 3rd conducting strip is connected with the storage medium on the inside surface of described storage medium array with the heat-conducting glue between described storage medium plate by being filled in described 3rd conducting strip,
Described 4th conducting strip is connected with the storage medium on the outside surface of described storage medium array with the heat-conducting glue between described storage medium plate by being filled in described 4th conducting strip.
5. the memory device according to any one of claim 1-4, is characterized in that, described base plate is provided with slot, and described storage medium plate is connected with described board electrical by described slot.
6. memory device as claimed in claim 5, it is characterized in that, described slot is dimm socket.
7. the memory device according to any one of claim 1-6, is characterized in that, described memory device comprises multiple storage medium plate, and described multiple storage medium plate is disposed side by side on described base plate.
8. the memory device according to any one of claim 1-7, described storage medium is flash chip.
9. the memory device according to any one of claim 1-8, any conducting strip at least one conducting strip described is graphene film, graphite flake or copper sheet.
10. memory device as claimed in any one of claims 1-9 wherein, described heat-conducting glue is casting glue or thermally conductive gel.
CN201510873051.XA 2015-12-02 2015-12-02 Storage device Pending CN105390150A (en)

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Application Number Priority Date Filing Date Title
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Publication Number Publication Date
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