CN105323687A - Silicon capacitance microphone with polycrystalline silicon layer being provided with bulges and preparation method thereof - Google Patents
Silicon capacitance microphone with polycrystalline silicon layer being provided with bulges and preparation method thereof Download PDFInfo
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Abstract
The invention provides a silicon capacitance microphone with a polycrystalline silicon layer being provided with bulges and a preparation method thereof. According to the invention, a substrate of the silicon capacitance microphone is provided with 1-3 polycrystalline silicon layers, at least one of the polycrystalline silicon layers is deformed after receiving sound pressure, at least one of the 1-3 polycrystalline silicon layers is provided with a plurality of bulges at the same time which are different in height and cross section, the bulges are differentiated in type according to differences in height and cross section, and the number of the types is greater than or equal to 3. On the basis of ensuring the reliability that a vibrating diaphragm and a back electrode can release naturally after being mutually attracted, the preparation method not only realizes optimization for the electrical performance of the silicon capacitance microphone, but also realizes optimization for mechanics and geometric deformation of the silicon capacitance microphone, thereby enabling performance indexes such as the sensitivity, the signal-to-noise ratio, the linearity, the operating voltage of the silicon capacitance microphone to acquire global optimization in an integrated mechanical and electrical manner.
Description
Technical field
The present invention relates to silicon capacitor microphone technical field, bossed silicon capacitor microphone and preparation method thereof is set on a kind of polysilicon layer.
Background technology
Micro electronmechanical (MEMSmicro-electro-mechanicalsystem) system because its volume is little, be suitable for the advantages such as surface mount and be widely used in consumer electronics and some high-end electronic products, such as: mobile phone, MP3, recording pen, automotive electronics etc.Usually, MEMS system is comprising the micro mechanical structure transducer other physical signallings being converted into the signal of telecommunication foremost, or in the end end comprises transform electrical signals is the micro mechanical structure actuator of other physical signallings.Micro mechanical structure plays the effect of the translation interface of the signal of telecommunication and other physical signallings in MEMS system.For meeting the growing material and cultural needs of the people, the index such as volume, cost, sensitivity, the linearity of MEMS system is also constantly optimizing raising.In relevant optimisation technique scheme, being no lack of numerous effort, attempting to avoid the machinery of movable structure to stick by arranging projection on the polysilicon layer.
As everyone knows, in micro mechanical system, for gravity, inertia force etc., surface force becomes leading role power, and this easily causes micro mechanical structure surface to produce stronger sticking together and adhesion when contacting with each other, and can have a strong impact on the reliability of MEMS.
In prior art, stick together for solving and stick problem, developing the technology that some arrange projection on the polysilicon layer.Chinese patent CN103449354A, Chinese patent CN100502560C and Chinese patent CN1498513B control the surface energy of polysilicon layer by the material and size defining projection, ensure its stick together by external force/stick after stick together/adhesive force is less, can external force disappear after discharge voluntarily.Chinese patent CN100539740C and Chinese patent CN102762490 takes into account the warpage feature of motion of membrane simultaneously, is provided with multiple projection on the polysilicon layer.But the object of above-mentioned two technical schemes be only ensure polysilicon layer stick together by external force/stick after stick together/adhesive force is less, structure can external force disappear after discharge voluntarily, therefore setting multiple rising heights be identical.Chinese patent CN103569942A is then provided with multiple projection on micro mechanical structure surface, be divided into metal protuberance and oxide projection two kinds, twice depositing operation is used to realize respectively, by arranging the projection of differing heights, can cushion and reduce contact area when sticking together/stick, but because the characteristic of multiple material is different, easily introduce thermal stress when extraneous humiture change and stick together/the problem such as adhesive force or contact resistance fluctuation, the use of multiple material here also correspondingly increases mask and process cost.
As mentioned before, traditional technology arranging projection is on the polysilicon layer sticked together to solve and stick problem, therefore conventional art does not have especially for height, the size of projection, the factor such as quantity, position is optimized and is improved, general way be according to structure release after needs, be concerned about position projection is set, by reduce contact area, control surface adhesion power when contact material reduces potential sticking, thus realize the Spontaneous release after contact.Such optimisation technique achieves obvious success in reliability, but space of still improving a lot on mechanics and electric property optimization, this limitation also result in the contradiction between reliability and performance.
Summary of the invention
The invention provides on a kind of polysilicon layer and bossed silicon capacitor microphone is set, can under the process conditions of once-forming, by first arranging the mode of deposit spathic silicon after sacrifice layer figure, not only realize the optimization of circuit and electrical property in silicon capacitor microphone, also the mechanical characteristic of silicon capacitor microphone and the optimization of geometry deformation characteristic is realized, ensure that polysilicon layer is sticking together and can naturally decontrol after sticking simultaneously, thus make the performance index such as the sensitivity of silicon capacitor microphone, the linearity obtain the global optimization of comprehensive mechanics and electricity.
For solving the problem, the invention discloses on a kind of polysilicon layer and bossed silicon capacitor microphone is set, its substrate is provided with 1 ~ 3 layer of polysilicon layer, wherein at least one deck polysilicon layer can deform after receiving acoustic pressure, at least one deck in 1 ~ 3 layer of polysilicon layer is provided with multiple projection, projection carries out kind differentiation according to the difference of height and cross section, and the kind of projection is at least 3 kinds.
Preferably, polysilicon layer disclosed by the invention arranges bossed silicon capacitor microphone, also in polysilicon layer, thin film can be set towards the one side of projection direction, the material of film can comprise following one or more: carbon-based polymer, silicon, silica body, silicon-nitrogen compound, carborundum, germanium, GaAs, carbon, titanium, gold, iron, copper, chromium, tungsten, aluminium, platinum, palladium, nickel, tantalum, by one or more alloys formed in titanium, gold, iron, copper, chromium, tungsten, aluminium, platinum, palladium, nickel, tantalum and oxide.Ensure that by selecting the material of film the surface energy of micro mechanical structure is less, on the basis controlling micro mechanical structure maximum adhesion/adhesive force, the surface roughness considering the coefficient of thermal expansion of different materials on mechanics, dielectric constant and material, on factors such as the impacts of Electric Field Distribution and air drag, carries out the further optimization in mechanics and electricity to silicon capacitor microphone.
Preferably, polysilicon layer disclosed by the invention arranges bossed silicon capacitor microphone, wherein the size of polysilicon layer upper process is decided by the size of the sacrifice layer below polysilicon layer.Except the size by arranging underlying sacrificial layer is come except the size of control projection, also there is the mode of the size of other control projections.Multiple projections of setting such as can be made different to the residual stress response after release, so also can obtain the projection of different size.But this mode is controlled not as this mode of size arranging sacrifice layer.
Preferably, polysilicon layer disclosed by the invention arranges bossed silicon capacitor microphone, wherein the material of sacrifice layer can be silicon dioxide.In fact, conventional sacrificial layer material also has phosphorosilicate glass, Pyrex, aluminium etc., even polysilicon itself, but from Selection radio, conductivity, coefficient of thermal expansion, dielectric constant and course of processing stress influence that material is removed, select silicon dioxide to be preferably.
Preferably, polysilicon layer disclosed by the invention arranges bossed silicon capacitor microphone, wherein the kind of polysilicon layer upper process, position, quantity, size can optimize needs according to mechanics and electricity, by arranging mask plate and definition process parameter is determined.In the specific implementation, as mentioned before, process conditions and optimization need to determine projection kind.The thickness of mask plate patterns and polysilicon layer must be considered simultaneously, kind and the size of projection could be determined completely, in an embodiment of the present invention, the pattern character size that the mask related to removes sacrifice layer should have larger size range, its characteristic size can for be less than deposit thickness, with deposit thickness quite or be greater than deposit thickness, corresponding three kinds of rising heights respectively, can according to the stability of technological parameter in reality is implemented, and combined sensor optimization needs the kind determining the rising height arranged.After the kind determining projection and size, position and the quantity of projection just can be determined according to the kind of projection and size, because stick together the gross area that adhesive force depends on the Contact of each polysilicon layer, and optimum projection position and quantity can be set according to the kind of projection and this constraint of size, to obtain the optimization of the overall situation in electric capacity, stress, damping etc.
Preferably, polysilicon layer disclosed by the invention arranges bossed silicon capacitor microphone, the polysilicon layer being wherein provided with multiple projection can be movable, also can be Immobile.In force, according to the optimization needs of diaphragm deformation and stress, projection can be arranged on movable polysilicon layer, also can be arranged on Immobile polysilicon layer, be arranged on movable and Immobile polysilicon layer even simultaneously.
Preferably, polysilicon layer disclosed by the invention arranges bossed silicon capacitor microphone, wherein the technical scheme of the technical scheme of multiple projections that rational height is different with cross section and general optimization mechanical property and electric property is compatible on the polysilicon layer.Such as the present invention is compatible about arranging the technical scheme of flexible backplane, and arranges the technical scheme etc. of fold on the polysilicon layer.By contrast, Chinese patent CN103569942A can run into some when the technical scheme improved with these other is compatible and conflicts.
Preferably, polysilicon layer disclosed by the invention is arranged in bossed silicon capacitor microphone, the gap in silicon capacitor microphone between vibrating diaphragm and backplane and there is between the height of projection a setting relation.Arranging bossed polysilicon layer in silicon capacitor microphone is backplane or vibrating diaphragm, and vibrating diaphragm is generally movable, and backplane is generally Immobile, forms a variable capacitance between vibrating diaphragm and backplane.The variant that vibrating diaphragm occurs after accepting acoustic pressure is generally warpage, and after distortion, the plane contact area between vibrating diaphragm with backplane is relevant with the deformation extent of vibrating diaphragm, the height of projection and the gap between vibrating diaphragm and backplane.Therefore when arranging projection on backplane and vibrating diaphragm, there is different optimum rising heights in the gap that corresponding vibrating diaphragm is different between backplane.In reality is implemented, the height of projection is generally discretization, and such as, when machining accuracy is 0.1um, the height of projection can be 0.5um, 0.6um, 0.7um and 0.8um, and the height of projection increases progressively in units of 0.1um; And when machining accuracy is 0.2um, the height of projection can be 0.5um, 0.7um and 0.9um, the height of projection increases progressively in units of 0.2um.
Preferably, polysilicon layer disclosed by the invention is arranged in bossed silicon capacitor microphone, the altitude range of projection is 0.5um ~ 1um.Be limited to processing technology achieved at present, the minimum altitude of the projection arranged on the polysilicon layer is 0.5um, and maximum height is 1um.
For solving the problem, present invention also offers the preparation method a kind of polysilicon layer being arranged bossed silicon capacitor microphone, comprising the following steps:
A), arrange one and have setting thickness and shape, surface is the basal layer of plane, and wherein, in the material of basal layer and silicon capacitor microphone, the material of sacrifice layer is different, basal layer be following any one: monocrystalline silicon layer, polysilicon layer, silicon nitride layer;
B), by the technique of growth material, one first sacrifice layer is set above basal layer;
C) shelter, selectively and etch the first sacrifice layer, on the first sacrifice layer, Formation Depth is identical with the thickness of the first sacrifice layer, multiple depressions that cross section is different;
D), by the technique of growth material, the first sacrifice layer arranges one second sacrifice layer, the second sacrifice layer forms multiple depression, the pass between the plane characteristic size caved in the second sacrificial layer thickness of multiple recess and this place be following any one:
(1), the plane characteristic size that caves in much smaller than this place of the second sacrificial layer thickness of recess,
(2), the plane characteristic size that caves in of the second sacrificial layer thickness of recess and this place is suitable,
(3), the plane characteristic size that caves in much larger than this place of the second sacrificial layer thickness of recess;
E), according to needs polysilicon layer being arranged projection, the second sacrifice layer is implemented or does not implement optionally to shelter and etching technics;
F), steps d and e1 ~ 3 time are repeated;
G), by the technique of growth material, the second sacrifice layer arranges a polysilicon layer;
H), to the first sacrifice layer and the second sacrifice layer release stress.
Wherein, after step f terminates, obtain the sacrifice layer of a surface with multiple depression, the polysilicon layer arranged in step g is in on this sacrifice layer of multiple depression, thus forming multiple projection, after step g terminates, all the other preparation processes are identical with the common process of the overall microphone structure of preparation, finally implement the step removing sacrifice layer, the polysilicon layer with multiple projection can be obtained.
In the micro mechanical structure of silicon bulk fabrication, for the Similar Problems of the structure planar buckling deformation after release, obviously the effect of optimization similar to the present invention can be reached by the projection directly arranging differing heights on mask.But in responsive motion vertical in the silicon capacitor microphone of mask plane, CN103569942A is known for contrast Chinese patent, and the effect arranged on the polysilicon layer after the projection of multiple differing heights is not remarkable simultaneously.This situation can by arranging multiple sacrifice layer to improve, for example, can at existing polysilicon layer or substrate surface deposition one first sacrifice layer, again by the control of the mask pattern to this first sacrifice layer part of removal, cover worn-out and this first sacrifice layer of etching selectively, and then primary depositing one second sacrifice layer, then at the surface deposition polysilicon layer of the second sacrifice layer, reach the object that one-shot forming technique generates the projection of differing heights.
Beneficial effect of the present invention is: on the basis of the reliability can naturally decontroled after ensureing vibrating diaphragm and backplane adhesive, not only achieve the optimization to silicon capacitor microphone electrical property, also achieve the optimization to silicon capacitor microphone mechanics and geometry deformation, thus make the performance index such as the sensitivity of silicon capacitor microphone, signal to noise ratio, the linearity, operating voltage obtain the global optimization of comprehensive mechanics and electricity.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the projection realizing multiple differing heights in once-forming technique;
Fig. 2 be backplane upper, vibrating diaphragm under the silicon microphone structural representation of two-layer polysilicon layer;
Fig. 3 be vibrating diaphragm upper, backplane under the silicon microphone structural representation of two-layer polysilicon layer;
The silicon microphone structural representation of Fig. 4 to be backplane be flexible two-layer polysilicon layer;
Fig. 5 is the silicon microphone structural representation comprising three layers of polysilicon layer;
Fig. 6 is preparation method's schematic diagram polysilicon layer provided by the invention being arranged bossed silicon capacitor microphone.
Description of reference numerals: 101-polysilicon layer; Polysilicon layer after 102-deforms; The projection of 201 ~ 203-differing heights; 301-substrate; 401-first sacrifice layer; 402-second sacrifice layer; 1-basal layer; 2-c step terminates the first sacrifice layer of rear formation; 3-f step terminates the second sacrifice layer of rear formation; 4-g step terminates the polysilicon layer of rear formation.
Embodiment
The present invention discloses on a kind of polysilicon layer and arranges bossed silicon capacitor microphone, can under the process conditions of once-forming, by first arranging the mode of deposit spathic silicon after sacrifice layer figure, not only realize the optimization to circuit and electrical property, also the optimization to mechanics and geometry deformation is realized, ensure the reliability can naturally decontroled after sticking together and sticking simultaneously, thus make the performance index such as the sensitivity of silicon capacitor microphone, the linearity obtain the global optimization of comprehensive mechanics and electricity.Below in conjunction with concrete drawings and Examples, the invention will be further described.
Fig. 1 is the schematic diagram of the projection realizing multiple differing heights in once-forming technique.In the micro mechanical structure of silicon bulk fabrication, for the Similar Problems of the structure planar buckling deformation after release, the projection that obviously directly can arrange differing heights on mask reaches the effect of optimization similar to the present invention.But in responsive motion vertical in the silicon capacitor microphone of mask plane, Chinese patent CN103569942A is known in contrast, the effect of the projection of multiple differing heights is set simultaneously on the polysilicon layer and not obvious.As shown in Figure 1, can at surface deposition first sacrifice layer 401 of existing polysilicon layer 101 or substrate 301, again by the control to the mask pattern of removal first sacrifice layer 401 part, cover worn-out and etching the first sacrifice layer 401 selectively, and then primary depositing second sacrifice layer 402, then at the surface deposition polysilicon layer 101 of the second sacrifice layer 402, the object of the projection 201 ~ 203 generating multiple differing heights in one-shot forming technique is reached.
Fig. 2 be backplane upper, vibrating diaphragm under the silicon microphone structural representation of two-layer polysilicon layer.This structure is a kind of typical silicon capacitor microphone structure, and wherein, the polysilicon layer 101 on upper strata is movable by the constraint definition at edge, and the polysilicon layer 101 of lower floor is immovable by the constraint definition at edge.The kind of the projection 201 ~ 203 of differing heights, position, quantity, size is determined according to process conditions and the polysilicon layer 102 after deforming.Wherein, the kind of projection mentioned here is distinguish according to the difference of height and cross section, and height and cross section have arbitrary difference to be variety classes, and as mentioned before, process conditions and optimization need to determine projection kind.The thickness of mask plate patterns and sacrifice layer must be considered simultaneously, to determine kind and the size of projection, in an embodiment of the present invention, the pattern character size that the mask related to removes sacrifice layer should have larger size range, such as characteristic size can be less than deposit thickness, with deposit thickness quite or be greater than deposit thickness, these three kinds of characteristic sizes are corresponding three kinds of rising heights respectively, can according to the stability of technological parameter in reality is implemented, and combined sensor optimization needs the kind determining projection.After the kind determining projection and size, just can determine position and quantity according to the kind of projection and size, because stick together the gross area that adhesive force depends on the Contact of each polysilicon layer, and optimum projection position can be set according to the kind of projection and this constraint of size and quantity obtains overall optimization in electric capacity, stress, damping etc.
Fig. 3 be vibrating diaphragm upper, backplane under the silicon microphone structural representation of two-layer polysilicon layer.This structure is another kind of typical silicon capacitor microphone structure, the polysilicon layer 101 of upper movable is movable vibrating diaphragm by the constraint definition at edge, the kind of the projection 201 ~ 203 of differing heights, position, quantity, size is determined, to reach the object of comprehensive global optimization according to process conditions and the polysilicon layer 102 after deforming.The rigidity backplane of below can be polysilicon layer 101, also can be substrate 301.
The silicon microphone structural representation of Fig. 4 to be backplane be flexible two-layer polysilicon layer.This structure is another kind of typical silicon capacitor microphone structure, and two-layer polysilicon layer 101 is all that movably its mobility not necessarily needs identical by the constraint definition at edge.The kind of the projection 201 ~ 203 of differing heights, position, quantity, size is jointly determined, to reach the object of comprehensive global optimization according to process conditions and the polysilicon layer 102 after deforming.
Fig. 5 is the silicon microphone structural representation comprising three layers of polysilicon layer.This structure is a kind of typical difference silicon capacitor microphone structure.General is immovable by the polysilicon layer 101 of upper and lower layer by the constraint definition at edge, and is defined as movably laterally zygomorphic by the polysilicon layer 101 in middle level.The kind of the projection 201 ~ 203 of differing heights, position, quantity, size is jointly determined, to reach the object of comprehensive global optimization according to process conditions and the middle level polysilicon layer 102 after deforming.
Fig. 6 is preparation method's schematic diagram polysilicon layer provided by the invention being arranged bossed silicon capacitor microphone, and as shown in the figure, this preparation method comprises the following steps:
A), arrange one and have setting thickness and shape, surface is the basal layer 1 of plane, and wherein, in the material of basal layer 1 and silicon capacitor microphone, the material of sacrifice layer is different, basal layer 1 be following any one: monocrystalline silicon layer, polysilicon layer, silicon nitride layer;
B), by the technique of growth material, one first sacrifice layer is set above basal layer 1;
C) shelter, selectively and etch the first sacrifice layer, on the first sacrifice layer, Formation Depth is identical with the thickness of the first sacrifice layer, multiple depressions that cross section is different, and step c terminates in the first sacrifice layer of rear formation and Fig. 62;
D), by the technique of growth material, the first sacrifice layer arranges one second sacrifice layer, the second sacrifice layer forms multiple depression, the pass between the plane characteristic size caved in the second sacrificial layer thickness of multiple recess and this place be following any one:
(1), the plane characteristic size that caves in much smaller than this place of the second sacrificial layer thickness of recess,
(2), the plane characteristic size that caves in of the second sacrificial layer thickness of recess and this place is suitable,
(3), the plane characteristic size that caves in much larger than this place of the second sacrificial layer thickness of recess,
E), according to needs polysilicon layer being arranged projection, the second sacrifice layer is implemented or does not implement optionally to shelter and etching technics;
F), steps d and e1 ~ 3 time are repeated;
F step terminates 3,3 in the second sacrifice layer of rear formation and Fig. 6 here for repeating Step d once, and not through sheltering with etching technics after obtain;
G), by the technique of growth material, the second sacrifice layer arranges a polysilicon layer, g step terminates in the polysilicon layer of rear formation and Fig. 64;
H), to the first sacrifice layer and the second sacrifice layer release stress.
Wherein, Step d repeats will to obtain the projection of more than 3 kinds kinds once, after step f terminates, obtain the sacrifice layer of a surface with multiple depression, the polysilicon layer arranged in step g in on this sacrifice layer of multiple depression, thus forms multiple projection, after step g terminates, all the other preparation processes are identical with the common process of the overall microphone structure of preparation, finally implement the step removing sacrifice layer, can obtain the polysilicon layer with multiple projection.In the present invention, as the bossed polysilicon layer of multiple bands for being formed as shown in Figure 4, then realize by repeating implementation step b ~ g, all the other steps are then identical with the common process of the overall microphone structure of preparation, concrete mode is well known to those skilled in the art, and does not repeat them here.
In addition, the term " front " in specification and claims, " afterwards ", " top ", " end ", " on ", D scores etc. (if existence) are for illustration of property object and not necessarily for describing permanent relative position.Be understandable that the term so used can exchange in the appropriate case, make embodiments of the invention as herein described can at the enterprising line operate in other directions being such as different from above-mentioned or described direction herein.
The above description of this invention is illustrative, and nonrestrictive, and those skilled in the art is understood, and can carry out many amendments, change or equivalence, but they all will fall within the scope of protection of the present invention within the spirit and scope of claim restriction to it.Herein with reference to any benefit that specific embodiment illustrates, the solution of advantage or problem is not intended to the key, essential feature or the element that are interpreted as any or all of claim.
Claims (10)
1. a polysilicon layer arranges bossed silicon capacitor microphone, it is characterized in that: on its substrate, be provided with 1 ~ 3 layer of polysilicon layer, wherein at least polysilicon layer described in one deck can deform after receiving acoustic pressure, at least one deck in described 1 ~ 3 layer of polysilicon layer is provided with multiple projection, described projection carries out kind differentiation according to the difference of height and cross section, and the kind of described projection is at least 3 kinds.
2. polysilicon layer according to claim 1 arranges bossed silicon capacitor microphone, it is characterized in that, in described polysilicon layer, the one side of projection direction is provided with thin film, the material of described film comprise following one or more: carbon-based polymer, silicon, silica body, silicon-nitrogen compound, carborundum, germanium, GaAs, carbon, titanium, gold, iron, copper, chromium, tungsten, aluminium, platinum, palladium, nickel, tantalum, by one or more alloys formed in titanium, gold, iron, copper, chromium, tungsten, aluminium, platinum, palladium, nickel, tantalum and oxide.
3. polysilicon layer according to claim 1 arranges bossed silicon capacitor microphone, it is characterized in that, the size of described projection is determined by the size of the sacrifice layer below described polysilicon layer.
4. polysilicon layer according to claim 1 arranges bossed silicon capacitor microphone, it is characterized in that, the material of described sacrifice layer is silicon dioxide.
5. polysilicon layer according to claim 1 arranges bossed silicon capacitor microphone, it is characterized in that, kind, position, the quantity of described polysilicon layer upper process, be of a size of and optimize needs according to mechanics and electricity, by arranging mask plate and definition process parameter is determined.
6. polysilicon layer according to claim 1 arranges bossed silicon capacitor microphone, it is characterized in that, the polysilicon layer being wherein provided with multiple projection is movable or Immobile.
7. polysilicon layer according to claim 1 arranges bossed silicon capacitor microphone, it is characterized in that, the technical scheme of multiple projections that described rational height is on the polysilicon layer different with cross section and the technical scheme compatibility of general optimization mechanical property and electric property.
8. polysilicon layer according to claim 1 arranges bossed silicon capacitor microphone, it is characterized in that, in described silicon capacitor microphone vibrating diaphragm and backplane by the deformation after acoustic pressure and between gap and the height of described projection between there is a setting relation.
9. polysilicon layer according to claim 1 arranges bossed silicon capacitor microphone, it is characterized in that, the height of described projection is discretization, and the altitude range of described projection is 0.2um ~ 3.5um.
10. polysilicon layer is arranged a preparation method for bossed silicon capacitor microphone, it is characterized in that, comprise the following steps:
A), arrange one and there is setting thickness and shape, surface is the basal layer of plane, wherein, in the material of described basal layer and described silicon capacitor microphone, the material of sacrifice layer is different, described basal layer be following any one: monocrystalline silicon layer, polysilicon layer, silicon nitride layer;
B), by the technique of growth material, one first sacrifice layer is set above described basal layer;
C) shelter, selectively and etch described first sacrifice layer, on described first sacrifice layer, Formation Depth is identical with the thickness of described first sacrifice layer, multiple depressions that cross section is different;
D), by the technique of growth material, described first sacrifice layer arranges one second sacrifice layer, described second sacrifice layer forms multiple depression, the pass between the plane characteristic size caved in the second sacrificial layer thickness of multiple described recess and this place be following any one:
(1), the plane characteristic size that caves in much smaller than this place of the second sacrificial layer thickness of recess,
(2), the plane characteristic size that caves in of the second sacrificial layer thickness of recess and this place is suitable,
(3), the plane characteristic size that caves in much larger than this place of the second sacrificial layer thickness of recess;
E), according to needs polysilicon layer being arranged projection, described second sacrifice layer is implemented or do not implemented optionally to shelter and etching technics;
F), steps d and e1 ~ 3 time are repeated;
G), by the technique of growth material, described second sacrifice layer arranges a polysilicon layer;
H), to described first sacrifice layer and described second sacrifice layer release stress.
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| CN201410334192.XA CN105323687A (en) | 2014-07-14 | 2014-07-14 | Silicon capacitance microphone with polycrystalline silicon layer being provided with bulges and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022110270A1 (en) * | 2020-11-25 | 2022-06-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1498513A (en) * | 2000-08-11 | 2004-05-19 | ��˹��ŵ�� | Miniature broadband transducer |
| CN103449354A (en) * | 2012-04-25 | 2013-12-18 | 阿尔卑斯电气株式会社 | MEMS sensor and producing method thereof |
| CN103569942A (en) * | 2012-08-01 | 2014-02-12 | 台湾积体电路制造股份有限公司 | Hybrid MEMS bump design to prevent in-process and in-use stiction |
| CN103702269A (en) * | 2013-12-31 | 2014-04-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
-
2014
- 2014-07-14 CN CN201410334192.XA patent/CN105323687A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1498513A (en) * | 2000-08-11 | 2004-05-19 | ��˹��ŵ�� | Miniature broadband transducer |
| CN103449354A (en) * | 2012-04-25 | 2013-12-18 | 阿尔卑斯电气株式会社 | MEMS sensor and producing method thereof |
| CN103569942A (en) * | 2012-08-01 | 2014-02-12 | 台湾积体电路制造股份有限公司 | Hybrid MEMS bump design to prevent in-process and in-use stiction |
| CN103702269A (en) * | 2013-12-31 | 2014-04-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022110270A1 (en) * | 2020-11-25 | 2022-06-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone chip |
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