CN105245091A - Grid electrode drive circuit of power converter medium power MOS transistor - Google Patents
Grid electrode drive circuit of power converter medium power MOS transistor Download PDFInfo
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- CN105245091A CN105245091A CN201510703629.7A CN201510703629A CN105245091A CN 105245091 A CN105245091 A CN 105245091A CN 201510703629 A CN201510703629 A CN 201510703629A CN 105245091 A CN105245091 A CN 105245091A
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- 238000004146 energy storage Methods 0.000 claims abstract description 35
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- 230000000694 effects Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 7
- 238000013499 data model Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
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Abstract
The invention discloses a grid electrode drive circuit of a power converter medium MOS transistor, comprising a DC voltage source V, a MOS transistor Q1, an energy storage capacitor C, an energy storage inductor L, an MOS transistor Q2 and an MOS transistor Q3. The anode of the DC voltage source V is connected to the drain electrode of the MOS transistor; the grid electrode of the MOS transistor Q1 is connected to an externally-connected control signal I; the source electrode of the MOS transistor Q1 is connected to one end of the energy storage capacitor C and one end of the energy storage inductor L; the other end of the energy storage capacitor is connected to the ground; the other end of the energy storage inductor L is connected to the drain electrode of the MOS transistor Q2 and the source electrode of the MOS transistor Q3; the grid electrode of the MOS transistor Q2 is connected to an externally-connected control signal II; the source electrode of the MOS transistor Q2 is connected to the cathode of the DC voltage source V and is connected to the ground; the grid electrode of the MOS transistor Q3 is connected to an externally-connected control signal III; the drain electrode of the MOS transistor Q3 is connected to the grid electrode of a power converter medium power MOS transistor Q4; and the externally-connected control signal I, the externally-connected control signal II, and the externally-connected control signal III are provided by a waveform generator with a adjustable dutyfactor.
Description
Technical field
The present invention relates to switch converters, particularly relate to the gate driver circuit of power MOS pipe in a kind of power inverter.
Background technology
In recent years, in order to reduce the volume of passive device further in power inverter, improve the power density of power inverter, the converter switches frequency of people's design is more and more higher.Generally, along with the increase of switching frequency, the switching loss of the power MOS pipe in converter and the loss of gate driver circuit all can increase thereupon, cause the efficiency of whole system to reduce.Like this, in frequency applications occasion, even if in underloading situation, due to the increase of switching loss and gate driver circuit loss, the reliability of system can not ensure.If these losses can not be effectively reduced, just likely cause the reliability reduction of related device inefficacy, system, even can cause whole system cisco unity malfunction.
Especially the power MOS pipe in converter, ensure have energy to be delivered to output from input in circuit, the reliability of power MOS pipe must be guaranteed.And two are comprised for the loss main source of metal-oxide-semiconductor: switching loss and conduction loss.The conduction loss of metal-oxide-semiconductor is determined by the conducting resistance of metal-oxide-semiconductor self and the electric current that flows through, and the conducting resistance due to metal-oxide-semiconductor is determined by the performance of metal-oxide-semiconductor self, and be substantially be in several ohm of ranks at zero point about.Therefore under normal circumstances, the conduction loss of metal-oxide-semiconductor is acceptable.But the switching loss of metal-oxide-semiconductor depends on the gate driver circuit of metal-oxide-semiconductor to a great extent.If the gate driver circuit design of metal-oxide-semiconductor is unreasonable, the switching loss of the metal-oxide-semiconductor caused so thus very likely causes the inefficacy of metal-oxide-semiconductor.
At present, for the design of traditional power MOS transistor grid drive circuit, great majority adopt voltage source by serial connection raster data model resistance, then carry out discharge and recharge to the grid of power MOS pipe.Although the design of this drive circuit simply and easily realize, drive current, while carrying out discharge and recharge to the grid of metal-oxide-semiconductor, has also flowed through raster data model resistance, inevitably will increase the loss of gate driver circuit like this.And the design of conventional MOS tube grid drive circuit, when metal-oxide-semiconductor needs to turn off, drive circuit is released through ground wire by the electric charge of metal-oxide-semiconductor gate electrodes, significantly increases the loss of gate driver circuit, be unfavorable for the raising of power inverter whole efficiency.
In addition, someone exports the difference of situation and the switching frequency of regulating power metal-oxide-semiconductor for reducing the loss of gate driver circuit load of also giving chapter and verse, although like this from one-period on the whole, contribute to the loss reducing drive circuit, but this scheme not only circuit realiration is comparatively complicated, but also output voltage can be caused to have larger ripple and comparatively serious EMI.Therefore, design a kind of structure simple, having again high efficiency metal-oxide-semiconductor gate driver circuit, is a large problem that will solve.
Summary of the invention
The object of the invention is the gate driver circuit providing power MOS pipe in a kind of power inverter, to reduce the loss of metal-oxide-semiconductor, especially reduces the switching loss of metal-oxide-semiconductor, improves the efficiency of converter further, increases the reliability of system.
The present invention for achieving the above object, adopts following technical scheme: the gate driver circuit of power MOS pipe in a kind of power inverter, is characterized in that: comprise direct voltage source V, metal-oxide-semiconductor Q
1, storage capacitor C, energy storage inductor L, metal-oxide-semiconductor Q
2with metal-oxide-semiconductor Q
3, the positive pole of direct voltage source V connects metal-oxide-semiconductor Q
1drain electrode, metal-oxide-semiconductor Q
1grid connect external control signal I, metal-oxide-semiconductor Q
1source electrode connect one end of storage capacitor C and one end of energy storage inductor L, the other end ground connection of storage capacitor C, the other end of energy storage inductor L connects metal-oxide-semiconductor Q
2drain electrode and metal-oxide-semiconductor Q
3source electrode, metal-oxide-semiconductor Q
2grid connect external control signal II, metal-oxide-semiconductor Q
2source electrode connect the negative pole of direct voltage source V and ground connection, metal-oxide-semiconductor Q
3grid connect external control signal III, metal-oxide-semiconductor Q
3drain electrode as the output of drive circuit, connect power MOS pipe Q in power inverter
4grid; External control signal I, external control signal II and external control signal III provided by the waveform generator that duty ratio is adjustable;
Above-mentioned drive circuit is power MOS pipe Q in Switching Power Supply
4a switch periods in, metal-oxide-semiconductor Q
1switch once, at power MOS pipe Q
4in opening process, the energy in storage capacitor C passes through by storage capacitor C, energy storage inductor L, metal-oxide-semiconductor Q
2with metal-oxide-semiconductor Q
3the equivalent Boost circuit of composition is delivered to power MOS pipe Q
4grid, at power MOS pipe Q
4in turn off process, power MOS pipe Q
4energy on grid passes through by metal-oxide-semiconductor Q
3, metal-oxide-semiconductor Q
2, the equivalent Buck circuit that forms of energy storage inductor L and storage capacitor C turns back in storage capacitor C.
Said direct voltage source V is a constant pressure source exporting 0.7V, and its effect is equivalent to a charge pump.
Said metal-oxide-semiconductor Q
1, metal-oxide-semiconductor Q
2with metal-oxide-semiconductor Q
3be N channel-type MOSFET, model adopts IRF120, metal-oxide-semiconductor Q
4for N channel-type MOSFET, it is 1 μ H that model adopts SPW20N60S5, storage capacitor C to be 10 μ F, energy storage inductor L.
Tool of the present invention has the following advantages:
1, power MOS pipe Q is made at drive circuit
4during shutoff, conventional drive scheme is often by metal-oxide-semiconductor Q
4gate charge is released completely by the earth, or by grid source bleeder resistance and metal-oxide-semiconductor Q
4grid source dead resistance consume, which not only adds the loss of drive circuit, and also reduce power MOS pipe Q
4reliability.Drive scheme of the present invention is by power MOS pipe Q
4the electric charge of gate electrodes is at metal-oxide-semiconductor Q
4during shutoff, feed back to again in the storage capacitor of drive circuit.For driven MOS pipe Q
4next cycle open-minded, greatly reduces the loss of drive circuit.
2, power MOS pipe Q is made at drive circuit
4when opening, compared with traditional drive scheme, owing to eliminating raster data model resistance, so just there is not the loss above raster data model resistance, reduce the loss of drive circuit, improve the efficiency of system in the present invention.
3, the drive scheme that proposes of the present invention, when drive current flow through inductance need afterflow time, adopt the method for synchronous rectification to instead of " fly-wheel diode " of traditional sense, reduce the loss of drive circuit further.
4, the drive scheme of the present invention's proposition is that increase only passive device energy storage inductor L and storage capacitor C that two are played energy storage effect, structure and control method simply, easily realize by basic Buck, the distortion of Boost circuit topology.
Accompanying drawing explanation
Fig. 1 is circuit theory diagrams of the present invention;
Fig. 2 is key node schematic diagram in Fig. 1;
Fig. 3 is Fig. 1 embodiment schematic diagram;
Fig. 4 is the oscillogram of associated control signal and key node in Fig. 2;
To be the present invention be connected in series the efficiency comparative of raster data model resistor proposal under different switching frequency from tradition to Fig. 5 schemes;
Embodiment
Be described in detail below in conjunction with the technology of accompanying drawing to invention.
As Fig. 1, it is the concrete schematic diagram that the present invention proposes.Direct voltage source V is a constant pressure source that can export 0.7V size, and its effect is equivalent to a charge pump.
Metal-oxide-semiconductor Q
1for N channel-type MOSFET, the external control signal I of grid, control metal-oxide-semiconductor Q
12 turned on and off in the suitable moment.Control signal I provided by the waveform generator that duty ratio is adjustable.
Storage capacitor C, before driven metal-oxide-semiconductor is opened, stores from the energy in direct voltage source 1.
Energy storage inductor L stored from the energy in storage capacitor C before driven metal-oxide-semiconductor is opened, for the unlatching of Boost circuit is prepared.
Metal-oxide-semiconductor Q
2for N channel-type MOSFET, the external control signal II of grid, control metal-oxide-semiconductor Q
2turn on and off in the suitable moment.Source and the control signal I of control signal II are similar, and being also provided by the waveform generator that duty ratio is adjustable.At power MOS pipe Q
4opening process, metal-oxide-semiconductor Q
2effect be equivalent in basic Boost circuit switching tube, by metal-oxide-semiconductor Q
2charge to energy storage inductor L, by the energy trasfer in storage capacitor C in energy storage inductor, for the unlatching of Boost circuit is prepared.
Metal-oxide-semiconductor Q
3for N channel-type MOSFET, the external control signal III of grid, control metal-oxide-semiconductor Q
3turn on and off in the suitable moment.Control signal III provided by the waveform generator that duty ratio is adjustable equally.At power MOS pipe Q
4opening process, metal-oxide-semiconductor Q
3effect be equivalent in basic Boost circuit " fly-wheel diode ", by metal-oxide-semiconductor Q
3for energy storage inductor L afterflow, realize the function of Boost.At power MOS pipe Q
4turn off process, metal-oxide-semiconductor Q
2with metal-oxide-semiconductor Q
3effect just exchange, at turn off process, metal-oxide-semiconductor Q
3effect be equivalent in basic Buck circuit switching tube, metal-oxide-semiconductor Q
2effect be equivalent in basic Buck circuit " fly-wheel diode ", be energy storage inductor L afterflow, thus realize the function of Buck converter.
Power MOS pipe Q
4for N channel-type power MOSFET, in representation switch converter, need driven MOSFET.
As Fig. 2, be key node A, B, C that Fig. 1 shows in schematic diagram, the signal waveform at these 3 places just can reflect whether this circuit can normally work.
As Fig. 3, be embodiment circuit theory diagrams.In specific implementation process, component parameter and device model be all as shown in Figure 3 in the present invention.
As Fig. 4, be drive circuit that the present invention proposes timing waveform when normally working, the key node C place finally shown in Fig. 2, obtains the switching signal of low and high level checker, reaches driving power metal-oxide-semiconductor Q
4object.
As Fig. 5, be the drive scheme adopting tradition serial connection raster data model resistor proposal and adopt the present invention to propose, under different switching frequencies, the comparison diagram of drive circuit efficiency.As can see from Figure 5, along with the raising of switching frequency, the efficiency of drive circuit declines all to some extent.But adopt the drive scheme that the present invention proposes, under higher switching frequency, efficiency all drives the efficiency of resistor proposal higher than traditional grid serial connection.
Direct voltage source V is connected in series metal-oxide-semiconductor Q
1drain electrode, metal-oxide-semiconductor Q
1the external control signal I of grid, metal-oxide-semiconductor Q
1source electrode be connected with one end of storage capacitor C, energy storage inductor L respectively, the other end ground connection of storage capacitor C, the other end serial connection metal-oxide-semiconductor Q of energy storage inductor L
3source electrode, metal-oxide-semiconductor Q
3the external control signal III of grid, metal-oxide-semiconductor Q
3drain electrode and converter in power MOS pipe Q
4grid be connected, power MOS pipe Q
4source ground, energy storage inductor and metal-oxide-semiconductor Q
3common port and metal-oxide-semiconductor Q
2drain electrode connect, metal-oxide-semiconductor Q
2the external control signal III of grid, metal-oxide-semiconductor Q
2source ground.
The present invention is at metal-oxide-semiconductor Q
4when opening, circuit equivalence can become basic Boost circuit, now metal-oxide-semiconductor Q
3be equivalent to " fly-wheel diode " in Boost circuit; At metal-oxide-semiconductor Q
4during shutoff, circuit equivalent can become the circuit of basic Buck, now metal-oxide-semiconductor Q
2be equivalent to " fly-wheel diode " in Buck circuit.And, at metal-oxide-semiconductor Q
4during shutoff, metal-oxide-semiconductor Q
4gate charge, is not fallen by external grid source bleeder resistance or metal-oxide-semiconductor endophyte grid source resistance consumption, but feeds back to energy storage inductor by the Buck circuit of equivalence, finally turns back in storage capacitor, reduces the Q of metal-oxide-semiconductor
4switching loss, also reduce the gate driver circuit loss of metal-oxide-semiconductor simultaneously, contribute to efficiency and the reliability of raising system.
The course of work of the present invention is as follows:
As shown in Figure 4, system electrification moment, control signal I provides, and makes control signal I become high level, metal-oxide-semiconductor Q
1realize open-minded, direct voltage source starts to charge to storage capacitor.Through 0 ~ t
1time, control signal I becomes low level, by metal-oxide-semiconductor Q
1turn off.Now obtain energy in storage capacitor.
Through t
1~ t
2after time, control signal II provides, and makes control signal II become high level, metal-oxide-semiconductor Q
2realize open-minded, start there is electric current by energy storage inductor, energy storage inductor starts energy storage, and in storage capacitor, energy starts to be delivered in energy storage inductor.
Through t
2~ t
3after time, control signal II becomes low level, metal-oxide-semiconductor Q
2turn off.Because inductive current can not suddenly change, will at metal-oxide-semiconductor Q
2drain electrode produce one rise voltage.Then through t
3~ t
4dead Time, at t
4in the moment, control signal III provides, and control signal III becomes high level, metal-oxide-semiconductor Q
3realize open-minded.Now circuit equivalent becomes a basic Boost circuit, and the energy in inductance starts to metal-oxide-semiconductor Q
4grid source capacitor charging, metal-oxide-semiconductor Q
4start conducting, through t
4~ t
5time, control signal III is become low level, metal-oxide-semiconductor Q
3turn off, metal-oxide-semiconductor Q afterwards
4gate source voltage be stabilized in 14.2V, metal-oxide-semiconductor Q
4realize open-minded.Now, metal-oxide-semiconductor Q
1, metal-oxide-semiconductor Q
2, metal-oxide-semiconductor Q
3all be in off state, and due to metal-oxide-semiconductor Q
3mode in place in circuit is that drain electrode connects driven power MOS pipe Q
4grid, avoid at metal-oxide-semiconductor Q
3turn off device, power MOS pipe Q
4electric charge above the electric capacity of grid source is by metal-oxide-semiconductor Q
3body diode release, so just can guaranteed output metal-oxide-semiconductor Q
4at t
5~ t
6period is conducting reliably.
At t
6in the moment, provide control signal III, make control signal III become high level, metal-oxide-semiconductor Q
3realize open-minded.Now due to metal-oxide-semiconductor Q
2be in off state, then power MOS pipe Q
4grid source electric capacity above electric charge just fed back to again in storage capacitor by energy storage inductor, the voltage on electric capacity at this moment section there will be rising a little, and now circuit equivalent becomes a basic Buck circuit.Through t
6~ t
7time, control signal III becomes low level, by metal-oxide-semiconductor Q
3turn off.Now, metal-oxide-semiconductor Q
4gate source voltage be stabilized in about 0.7V, make metal-oxide-semiconductor Q
4reliably end.
Through t
7~ t
8dead Time, at t
8moment, control signal II provided, and made control signal II become high level, metal-oxide-semiconductor Q
2realize open-minded, act on " fly-wheel diode " that be equivalent in basic Buck circuit, thus be energy storage inductor afterflow.Through t
8~ t
9time, control signal II becomes low level, metal-oxide-semiconductor Q
2turn off, until the T moment, the operating state of circuit one-period terminates.Next according to above-mentioned sequential, the work of circuit period property ground.C point place shown in Fig. 2 will produce the switching signal that height replaces, and makes power MOS pipe Q
4periodically turn on and off, realize power MOS pipe Q in driving switch converter
4object.And can realize at power MOS pipe Q
4when turning off, by the energy feedback in its grid source electric capacity in storage capacitor, reduce metal-oxide-semiconductor Q
4switching loss, improve further the efficiency of whole switch converters.
Claims (3)
1. the gate driver circuit of power MOS pipe in power inverter, is characterized in that: comprise direct voltage source V, metal-oxide-semiconductor Q
1, storage capacitor C, energy storage inductor L, metal-oxide-semiconductor Q
2with metal-oxide-semiconductor Q
3, the positive pole of direct voltage source V connects metal-oxide-semiconductor Q
1drain electrode, metal-oxide-semiconductor Q
1grid connect external control signal I, metal-oxide-semiconductor Q
1source electrode connect one end of storage capacitor C and one end of energy storage inductor L, the other end ground connection of storage capacitor C, the other end of energy storage inductor L connects metal-oxide-semiconductor Q
2drain electrode and metal-oxide-semiconductor Q
3source electrode, metal-oxide-semiconductor Q
2grid connect external control signal II, metal-oxide-semiconductor Q
2source electrode connect the negative pole of direct voltage source V and ground connection, metal-oxide-semiconductor Q
3grid connect external control signal III, metal-oxide-semiconductor Q
3drain electrode as the output of drive circuit, connect power MOS pipe Q in power inverter
4grid; External control signal I, external control signal II and external control signal III provided by the waveform generator that duty ratio is adjustable;
Above-mentioned drive circuit is power MOS pipe Q in Switching Power Supply
4a switch periods in, metal-oxide-semiconductor Q
1switch once, at power MOS pipe Q
4in opening process, the energy in storage capacitor C passes through by storage capacitor C, energy storage inductor L, metal-oxide-semiconductor Q
2with metal-oxide-semiconductor Q
3the equivalent Boost circuit of composition is delivered to power MOS pipe Q
4grid, at power MOS pipe Q
4in turn off process, power MOS pipe Q
4energy on grid passes through by metal-oxide-semiconductor Q
3, metal-oxide-semiconductor Q
2, the equivalent Buck circuit that forms of energy storage inductor L and storage capacitor C turns back in storage capacitor C.
2. the gate driver circuit of power MOS pipe in power inverter according to claim 1, is characterized in that: said direct voltage source V is a constant pressure source exporting 0.7V, and its effect is equivalent to a charge pump.
3. the gate driver circuit of power MOS pipe in power inverter according to claim 1 and 2, is characterized in that: said metal-oxide-semiconductor Q
1, metal-oxide-semiconductor Q
2with metal-oxide-semiconductor Q
3be N channel-type MOSFET, model adopts IRF120, metal-oxide-semiconductor Q
4for N channel-type MOSFET, it is 1 μ H that model adopts SPW20N60S5, storage capacitor C to be 10 μ F, energy storage inductor L.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510703629.7A CN105245091B (en) | 2015-10-27 | 2015-10-27 | The gate driving circuit of power MOS pipe in a kind of power inverter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510703629.7A CN105245091B (en) | 2015-10-27 | 2015-10-27 | The gate driving circuit of power MOS pipe in a kind of power inverter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105245091A true CN105245091A (en) | 2016-01-13 |
| CN105245091B CN105245091B (en) | 2018-04-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510703629.7A Expired - Fee Related CN105245091B (en) | 2015-10-27 | 2015-10-27 | The gate driving circuit of power MOS pipe in a kind of power inverter |
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| Country | Link |
|---|---|
| CN (1) | CN105245091B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109639118A (en) * | 2019-01-23 | 2019-04-16 | 深圳市芯飞凌半导体有限公司 | Self-powered circuit, control chip and the Switching Power Supply and electric device of Switching Power Supply |
| CN113346720A (en) * | 2021-06-21 | 2021-09-03 | 东莞市凌风科技有限公司 | High-frequency driving amplifier, high-frequency power conversion circuit and radio frequency cosmetic instrument |
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| CN1561576A (en) * | 2001-10-01 | 2005-01-05 | 皇家飞利浦电子股份有限公司 | Gate driver apparatus having an energy recovering circuit |
| CN103580475A (en) * | 2012-07-19 | 2014-02-12 | 英飞凌科技奥地利有限公司 | Charge recovery in power converter driver stages |
| CN103715870A (en) * | 2013-12-26 | 2014-04-09 | 华为技术有限公司 | Voltage regulator and resonance gate driver thereof |
| KR101519850B1 (en) * | 2014-07-09 | 2015-05-14 | 중앙대학교 산학협력단 | Resonant gate driver for driving mosfet |
-
2015
- 2015-10-27 CN CN201510703629.7A patent/CN105245091B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1561576A (en) * | 2001-10-01 | 2005-01-05 | 皇家飞利浦电子股份有限公司 | Gate driver apparatus having an energy recovering circuit |
| CN103580475A (en) * | 2012-07-19 | 2014-02-12 | 英飞凌科技奥地利有限公司 | Charge recovery in power converter driver stages |
| CN103715870A (en) * | 2013-12-26 | 2014-04-09 | 华为技术有限公司 | Voltage regulator and resonance gate driver thereof |
| KR101519850B1 (en) * | 2014-07-09 | 2015-05-14 | 중앙대학교 산학협력단 | Resonant gate driver for driving mosfet |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109639118A (en) * | 2019-01-23 | 2019-04-16 | 深圳市芯飞凌半导体有限公司 | Self-powered circuit, control chip and the Switching Power Supply and electric device of Switching Power Supply |
| CN109639118B (en) * | 2019-01-23 | 2024-01-26 | 上海芯飞半导体技术有限公司 | Self-powered circuit of switching power supply, control chip, switching power supply and electric device |
| CN113346720A (en) * | 2021-06-21 | 2021-09-03 | 东莞市凌风科技有限公司 | High-frequency driving amplifier, high-frequency power conversion circuit and radio frequency cosmetic instrument |
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|---|---|
| CN105245091B (en) | 2018-04-06 |
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