CN105088181A - MOCVD preparation method for silicon-based quantum dot laser material - Google Patents
MOCVD preparation method for silicon-based quantum dot laser material Download PDFInfo
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims abstract description 90
- 239000000463 material Substances 0.000 title claims abstract description 85
- 239000002096 quantum dot Substances 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 24
- 239000010703 silicon Substances 0.000 title claims abstract description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 117
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims description 98
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 56
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 45
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 23
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 23
- 230000006911 nucleation Effects 0.000 claims description 23
- 238000010899 nucleation Methods 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 13
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 11
- 238000011065 in-situ storage Methods 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical group CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 9
- 229910000077 silane Inorganic materials 0.000 claims description 9
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 239000011435 rock Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000005382 thermal cycling Methods 0.000 claims description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- 230000003139 buffering effect Effects 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000001451 molecular beam epitaxy Methods 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000035772 mutation Effects 0.000 description 4
- 238000000103 photoluminescence spectrum Methods 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007630 basic procedure Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000002631 hypothermal effect Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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- Semiconductor Lasers (AREA)
Abstract
The invention provides an MOCVD preparation method for a silicon-based quantum dot laser material. The MOCVD preparation method sequentially comprises the following steps that a low-temperature GaAs nucleating layer is made on a clean monocrystalline silicon substrate; a high-temperature GaAs buffering layer is made on the low-temperature GaAs nucleating layer; a strain superlattice structure is made on the high-temperature GaAs buffering layer; an n-type ohmic contact layer is made on the strained superlattice structure; an n-type limiting layer is made on the n-type ohmic contact layer; a lower waveguide layer is made on the n-type limiting layer; a multi-layer quantum dot active area is made on the lower waveguide layer; an upper waveguide layer is made on the multi-layer quantum dot active area; a p-type limiting layer is made on the upper waveguide layer; and a p-type ohmic contact layer is made on the p-type limiting layer. By the adoption of the MOCVD preparation method, material growth and preparation can be evenly and rapidly completed on a large area in a high repetitiveness manner, and cost is lower. The MOCVD preparation method is more suitable for the industrialization demand.
Description
Technical field
The present invention relates to semiconductor laser field, particularly relate to a kind of MOCVD preparation method of si-based quantum dot laser material.
Background technology
Microelectronics device based on silicon materials promotes the fast development of modern information technologies always.Along with the requirement of data capacity and transfer rate is more and more higher, the size of silicon device is more and more less.Thus, the significant challenge that silicon device is about to face is the restriction of metal interconnected (electrical interconnection) speed.Microelectronics and opto-electronic device are combined on silicon optical bench, adopt the light network mode of optoelectronic intagration, the restriction of electrical interconnection can either be overcome, maturation process technology and the wide bandwidth of photonic system, the fast advantage such as transfer rate, high noise immunity of microelectronic device can be given full play to again.
Can be with as indirect band gap structure due to IV race's material, be that the Laser Devices of optical gain material are difficult to realize with silicon.The laser apparatus being suitable for the single chip integrated silica-based electrical pumping (exciting) of photoelectricity at present does not also obtain desirable achievement.But III-V race's semiconductor material is generally direct band gap structure, has desirable optical property, the high conversion efficiency of wide range of wavelengths, wide modulation band-width, enough Output optical power can be realized, be widely used in various opto-electronic device.Therefore, silica-based integrated III-V race's semi-conducting material manufacturing opto-electronic device one of major programme becoming optoelectronic intagration.
Due to nature difference (the large mismatch of lattice parameter and thermal expansivity between III-V race's semi-conductor and silicon materials, and the reverse farmland problem of polar/non-polar crystal), easily cause highdensity misfit dislocation, thus cause device performance degeneration and inefficacy, be difficult to reach practical.In order to address these problems, traditional main method comprises: low-high temperature two-step approach, strained super lattice blocking layer method, thermal annealing method and graph substrate method etc.
Based on aforesaid method, carry out the Quantum well active district Laser Study of GaAs/Si material at first.Comparatively speaking, because the sensitivity of quantum dot active region laser apparatus to dislocation is low, and excitation wavelength can be expanded to optical communication system wavelength 1.3 μm, therefore silicon base III-V group semiconductor laser research at present mainly concentrates on silicon-based quantum dot laser.In the recent period, main abroad several study group achieve impressive progress in the research of silicon base III-V group quantum point laser material.University of Michigan first adopts metallorganic chemical vapor deposition (Metal-organicChemicalVaporDePosition, MOCVD) method prepares the GaAs/Si epitaxial material of low-dislocation-density, then molecular beam epitaxy (MolecularBeamEpitaxy is adopted, MBE) method growth quantum point laser material structure, achieves room temperature pulse and swashs and penetrate (1% dutycycle) wide and the silica-based In of ridge structure
0.5ga
0.5as/GaAs quantum dot laser.Its excitation wavelength is 1.02 μm, and threshold current density is 900A/cm
2(the long 3.6mm in chamber, working temperature 273K), characteristic temperature is 278K (in 5-85 DEG C of temperature range), and slope efficiency is 0.4W/A, and small signal modulation is 5.5GHz.University College London adopts MBE method, through optimizing GaAs low temperature nucleating condition on a silicon substrate, and in conjunction with multicycle InGaAs/GaAs strained super lattice blocking layer method, has prepared and has comprised 5 layers of InAs/In
0.15ga
0.85the laser material of As quantum dot active region structure, the room temperature pulse achieving the silicon-based quantum dot laser of wide device architecture swashs penetrates (0.01% dutycycle), and wavelength is 1.32 μm, and threshold current density is reduced to 725A/cm
2(the long 3.0mm in chamber, room temperature), characteristic temperature is 44K (in 20-42 DEG C of temperature range).
In the preparation method of silicon base III-V group quantum point laser material, many employing MBE methods at present, the problem of this method is that Material growth speed is slow, when preparing thicker GaAs/Si cushioning layer material, the growth time needed is oversize, and preparation process is complicated.
Summary of the invention
(1) technical problem that will solve
The invention provides a kind of MOCVD preparation method of si-based quantum dot laser material, carry out material by MBE in prior art to solve to prepare the preparation speed that causes slow, the technical problem of process complexity.
(2) technical scheme
For solving the problems of the technologies described above, the invention provides a kind of MOCVD preparation method of si-based quantum dot laser material, utilizing MOCVD method to carry out the material preparation of following steps successively, comprising:
Clean monocrystalline substrate makes GaAs low temperature nucleation layer;
Described GaAs low temperature nucleation layer makes GaAs high temperature buffer layer;
Described GaAs high temperature buffer layer makes strained super lattice structure;
Described strained super lattice structure makes N-shaped ohmic contact layer;
Described N-shaped ohmic contact layer makes N-shaped limiting layer;
Described N-shaped limiting layer makes lower waveguide layer;
Described lower waveguide layer makes multi-layer quantum point active area;
Described multi-layer quantum point active area makes ducting layer;
Ducting layer makes p-type limiting layer on described;
Described p-type limiting layer makes p-type ohmic contact layer.
Further, described method also comprises:
Between described strained super lattice structure and described N-shaped ohmic contact layer, MOCVD method is utilized to make strain interposed layer.
Further,
The crystal face of described monocrystalline substrate is <100> crystal face, deflection <110> or <111> crystal face 4 ° ~ 6 °, for eigenmode or low-resistance n-type silicon chip, thickness 350 ~ 390 μm.
Further,
The described monocrystalline substrate cleaning makes GaAs low temperature nucleation layer comprise: utilize Wet chemical cleaning method to clean monocrystalline substrate, more clean monocrystalline substrate is warmed up to 220 DEG C of bakings 30 minutes in atmosphere of hydrogen; Then 750 DEG C of bakings 15 minutes are warmed up at hydrogen and arsine mixed gas atmosphere; Finally cool to 400 ~ 420 DEG C of GaAs low temperature nucleation layer utilizing MOCVD method to grow 15 ~ 20nm, growth source flow is: trimethyl-gallium 2.7 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min;
And/or, describedly on described GaAs low temperature nucleation layer, make GaAs high temperature buffer layer comprise: be first warmed up to 610 ~ 640 DEG C through 10 minutes, utilize MOCVD method to grow 200 ~ 400nmGaAs high temperature buffer layer; Then 670 ~ 690 DEG C were warmed up to through 6 minutes, growth 1000 ~ 1500nmGaAs high temperature buffer layer, in process of growth, in hydrogen and arsine mixed gas atmosphere, carry out 1 ~ 3 in-situ heat cycle annealing, described thermal cycling is annealed into time thermal cycling annealing from 3 ~ 5 between 350 to 750 DEG C.
Further, describedly on described GaAs high temperature buffer layer, make strained super lattice structure comprise:
At 680 DEG C ~ 700 DEG C, utilize MOCVD method to grow the 8 ~ 12nmInGaAs/10 ~ 15nmGaAs superstructure in 5 ~ 10 cycles, wherein growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl indium 1.1 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min.
Further, the making method of described strain interposed layer also comprises:
At 680 DEG C ~ 700 DEG C, utilize MOCVD method to grow the 8 ~ 12nmGaAsP/10 ~ 15nmGaAs superstructure in 3 ~ 6 cycles, wherein growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min, phosphine 2.6 × 10
-3mol/min.
Further,
Describedly in described strained super lattice structure, make N-shaped ohmic contact layer also comprise: at 680 DEG C ~ 720 DEG C, utilize MOCVD method to grow the thick N-shaped Si Doped GaAs of 300 ~ 500nm, doping content is 5 × 10
18cm
-3~ 10
19cm
-3, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min, silane 4.3 × 10
-6mol/min;
And/or, describedly on described N-shaped ohmic contact layer, make N-shaped limiting layer comprise: at 700 DEG C ~ 720 DEG C, utilize MOCVD method to grow the thick N-shaped Si doped with Al GaAs of 1300 ~ 1800nm, doping content is 10
17cm
-3~ 10
18cm
-3, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl aluminium 2.6 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min, silane 4.3 × 10
-7mol/min ~ 4.3 × 10
-6mol/min;
And/or, describedly on described N-shaped limiting layer, make lower waveguide layer comprise: at 600 DEG C ~ 720 DEG C, utilize MOCVD method to grow the thick involuntary Doped GaAs of 80 ~ 100nm, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl aluminium 8.7 × 10
-6mol/min, arsine 6.7 × 10
-3mol/min.
Further, the described multi-layer quantum point active area that makes on described lower waveguide layer comprises:
Described lower waveguide layer makes 3 ~ 10 layers of quantum-dot structure, and every layer of quantum-dot structure includes InAs quantum dot layer, GaAs cap rock and GaAs sealing coat, and the making method of every layer of quantum-dot structure is:
At 480 DEG C ~ 500 DEG C, utilize MOCVD method to grow the InAs quantum dot of involuntary doping, V/III than being 5 ~ 15, and growth source flow is: trimethyl indium 8.6 × 10
-7mol/min, arsine 4.9 × 10
-6mol/min;
At 480 DEG C ~ 500 DEG C, utilize MOCVD method to grow the GaAs cap rock of the involuntary doping of 6 ~ 10nm, V/III than being 50 ~ 100, and growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min;
At 580 DEG C ~ 600 DEG C, utilize MOCVD method to grow the GaAs sealing coat of the involuntary doping of 25 ~ 40nm, V/III than being 50 ~ 100, and growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min.
Further,
Describedly on described multi-layer quantum point active area, make ducting layer comprise: at 600 DEG C ~ 700 DEG C, utilize MOCVD method to grow the involuntary Doped GaAs of 80 ~ 100nm, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl aluminium 8.7 × 10
-6mol/min, arsine 6.7 × 10
-3mol/min;
And/or, describedly ducting layer makes p-type limiting layer on described and comprise: at 700 DEG C ~ 720 DEG C, utilize MOCVD method to grow 1300 ~ 1500nmp type doped with Al GaAs, doping content is 10
17cm
-3~ 10
18cm
-3, growth source flow is: trimethyl-gallium 2.6 × 10
-5mol/min, trimethyl indium 5.0 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min, zinc ethyl 9.2 × 10
-7mol/min ~ 9.2 × 10
-6mol/min;
And/or, describedly on described p-type limiting layer, make p-type ohmic contact layer comprise: at 550 DEG C ~ 700 DEG C, utilize MOCVD method to grow the p-type heavy doping GaAs of 150 ~ 300nm, doping content is 10
19cm
-3~ 10
20cm
-3, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min, zinc ethyl 3.7 × 10
-6mol/min.
Further,
In order to utilize, MOCVD is disposable in situ completes preparation to the MOCVD preparation method of described si-based quantum dot laser material.
(3) beneficial effect
Visible, in the MOCVD preparation method of si-based quantum dot laser material provided by the invention, MOCVD method is adopted to carry out material preparation completely, compared with MBE method of the prior art, growth velocity improves greatly, can big area, evenly, complete Material growth and preparation high duplication, cost is cheaper, is more suitable for the demand of industrialization.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the MOCVD preparation method basic procedure schematic diagram of embodiment of the present invention si-based quantum dot laser material;
Fig. 2 is the MOCVD preparation method schematic flow sheet of the embodiment of the present invention 1 si-based quantum dot laser material;
Fig. 3 is the si-based quantum dot laser material structural representation prepared by the embodiment of the present invention 1;
Fig. 4 is the atomic force microscope schematic diagram of GaAs/Si mutation epitaxial thin film material in the si-based quantum dot laser material prepared by the embodiment of the present invention 1;
Fig. 5 is the atomic force microscope schematic diagram of the self-organization InAs/GaAs quantum dot sample grown on GaAs/Si mutation epitaxial thin film material in the si-based quantum dot laser material prepared by the embodiment of the present invention 1;
Fig. 6 is the photoluminescence spectrum test result comparison diagram of self-organizing growth InAs/GaAs quantum point laser material sample on GaAs/Si mutation epitaxial thin film material and GaAs substrate respectively.
Embodiment
For making the object of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The embodiment of the present invention provides a kind of MOCVD preparation method of si-based quantum dot laser material, utilizes MOCVD method to carry out the material preparation of following steps successively, see Fig. 1, comprising:
Step 101: make GaAs low temperature nucleation layer in clean monocrystalline substrate;
Step 102: make GaAs high temperature buffer layer on described GaAs low temperature nucleation layer;
Step 103: make strained super lattice structure on described GaAs high temperature buffer layer;
Step 104: make N-shaped ohmic contact layer in described strained super lattice structure;
Step 105: make N-shaped limiting layer on described N-shaped ohmic contact layer;
Step 106: make lower waveguide layer on described N-shaped limiting layer;
Step 107: make multi-layer quantum point active area on described lower waveguide layer;
Step 108: make ducting layer on described multi-layer quantum point active area;
Step 109: ducting layer makes p-type limiting layer on described;
Step 110: make p-type ohmic contact layer on described p-type limiting layer.
Visible, in the MOCVD preparation method of the si-based quantum dot laser material provided in the embodiment of the present invention, MOCVD method is adopted to carry out material preparation completely, compared with MBE method of the prior art, growth velocity improves greatly, can big area, evenly, complete Material growth and preparation high duplication, cost is cheaper, is more suitable for the demand of industrialization.
Preferably, method can also comprise: between described strained super lattice structure and described N-shaped ohmic contact layer, utilizes MOCVD method to make strain interposed layer.
Preferably, the crystal face of monocrystalline substrate can be <100> crystal face, deflection <110> or <111> crystal face 4 ° ~ 6 °, for eigenmode or low-resistance n-type silicon chip, thickness 350 ~ 390 μm.
Preferably, clean monocrystalline substrate makes GaAs low temperature nucleation layer can be comprised: utilize Wet chemical cleaning method to clean monocrystalline substrate, more clean monocrystalline substrate is warmed up to 220 DEG C of bakings 30 minutes in atmosphere of hydrogen; Then 750 DEG C of bakings 15 minutes are warmed up at hydrogen and arsine mixed gas atmosphere; Finally cool to 400 ~ 420 DEG C of GaAs low temperature nucleation layer utilizing MOCVD method to grow 15 ~ 20nm, growth source flow is: trimethyl-gallium 2.7 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min;
Preferably, GaAs low temperature nucleation layer makes GaAs high temperature buffer layer can be comprised: be first warmed up to 610 ~ 640 DEG C through 10 minutes, utilizes MOCVD method to grow 200 ~ 400nmGaAs high temperature buffer layer; Then 670 ~ 690 DEG C were warmed up to through 6 minutes, growth 1000 ~ 1500nmGaAs high temperature buffer layer, in the process of growth of this layer, can carry out 1 ~ 3 in-situ heat cycle annealing in hydrogen and arsine mixed gas atmosphere, the mode of wherein thermal cycling annealing is time circulation from 3 ~ 5 between 350 to 750 DEG C.
Preferably, GaAs high temperature buffer layer makes strained super lattice structure can comprise: at 680 DEG C ~ 700 DEG C, utilize MOCVD method to grow the 8 ~ 12nmInGaAs/10 ~ 15nmGaAs superstructure in 5 ~ 10 cycles, wherein growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl indium 1.1 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min.
Preferably, the making method of strain interposed layer can also comprise: at 680 DEG C ~ 700 DEG C, utilize MOCVD method to grow the 8 ~ 12nmGaAsP/10 ~ 15nmGaAs superstructure in 3 ~ 6 cycles, wherein growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min, phosphine 2.6 × 10
-3mol/min, P and the As constituent content ratio of GaAsP material wherein can regulate as required.
Preferably, strained super lattice structure makes N-shaped ohmic contact layer can also be comprised: at 680 DEG C ~ 720 DEG C, utilize MOCVD method to grow the thick N-shaped Si Doped GaAs of 300 ~ 500nm, doping content is 5 × 10
18cm
-3~ 10
19cm
-3, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min, silane 4.3 × 10
-6mol/min;
Preferably, N-shaped ohmic contact layer makes N-shaped limiting layer can be comprised: at 700 DEG C ~ 720 DEG C, utilize MOCVD method to grow the thick N-shaped Si doped with Al GaAs of 1300 ~ 1800nm, doping content is 10
17cm
-3~ 10
18cm
-3, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl aluminium 2.6 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min, silane 4.3 × 10
-7mol/min ~ 4.3 × 10
-6mol/min;
Preferably, N-shaped limiting layer makes lower waveguide layer can be comprised: at 600 DEG C ~ 720 DEG C, utilize MOCVD method to grow the thick involuntary Doped GaAs of 80 ~ 100nm, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl aluminium 8.7 × 10
-6mol/min, arsine 6.7 × 10
-3mol/min.
Preferably, lower waveguide layer makes multi-layer quantum point active area can comprise: on lower waveguide layer, make 3 ~ 10 layers of quantum-dot structure, every layer of quantum-dot structure includes InAs quantum dot layer, GaAs cap rock and GaAs sealing coat, and the making method of every layer of quantum-dot structure is:
At 480 DEG C ~ 500 DEG C, utilize MOCVD method to grow the InAs quantum dot of involuntary doping, V/III than being 5 ~ 15, and growth source flow is: trimethyl indium 8.6 × 10
-7mol/min, arsine 4.9 × 10
-6mol/min;
At 480 DEG C ~ 500 DEG C, utilize MOCVD method to grow the GaAs cap rock of the involuntary doping of 6 ~ 10nm, V/III than being 50 ~ 100, and growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min;
At 580 DEG C ~ 600 DEG C, utilize MOCVD method to grow the GaAs sealing coat of the involuntary doping of 25 ~ 40nm, V/III than being 50 ~ 100, and growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min.
Preferably, multi-layer quantum point active area makes ducting layer can be comprised: at 600 DEG C ~ 700 DEG C, utilize MOCVD method to grow the involuntary Doped GaAs of 80 ~ 100nm, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl aluminium 8.7 × 10
-6mol/min, arsine 6.7 × 10
-3mol/min;
Preferably, upper ducting layer makes p-type limiting layer can be comprised: at 700 DEG C ~ 720 DEG C, utilize MOCVD method to grow 1300 ~ 1500nmp type doped with Al GaAs, doping content is 10
17cm
-3~ 10
18cm
-3, growth source flow is: trimethyl-gallium 2.6 × 10
-5mol/min, trimethyl indium 5.0 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min, zinc ethyl 9.2 × 10
-7mol/min ~ 9.2 × 10
-6mol/min;
Preferably, p-type limiting layer makes p-type ohmic contact layer can be comprised: at 550 DEG C ~ 700 DEG C, utilize MOCVD method to grow the p-type heavy doping GaAs of 150 ~ 300nm, doping content is 10
19cm
-3~ 10
20cm
-3, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min, zinc ethyl 3.7 × 10
-6mol/min.
The si-based quantum dot laser material of the embodiment of the present invention MOCVD preparation method can MOCVD is disposable in situ completes preparation in order to utilize, like this without the need to material is shifted in cavity, also without the need to material is exposed in an atmosphere, avoid the pollution of material, simplify preparation flow.
Embodiment 1:
The embodiment of the present invention 1 provides a kind of metal organic chemical compound vapor deposition preparation method of silica-based InAs/GaAs quantum point laser material, to describe the specific implementation process of the embodiment of the present invention in detail, see Fig. 2, comprising:
Step 201: make GaAs low temperature nucleation layer in clean monocrystalline substrate.
The present embodiment adopts ThomasSwan3 × 2 " LP-MOCVD epitaxial growth system; in MOCVD growth technique process; carrier gas is high-purity hydrogen (99.999%); the III organic source of race is high purity (99.999%) trimethyl-gallium; trimethyl indium; trimethyl-gallium aluminium, V clan source is high-purity (99.999%) arsine, N-shaped doped source is silane, p-type doped source is zinc ethyl, chamber pressure is 100Torr, and growth temperature and annealing region are 350 ~ 750 DEG C, and the material structure of final preparation is shown in Fig. 3.
Wherein substrate 10 is the eigenmode monocrystalline silicon buffing sheet of the <100> crystal face deflection <110> crystal face 4 ° of silicon, diatomic step can be formed, suppress the formation on reverse farmland in silica-based GaAs/Si Material growth process, thickness is 350 μm.Adopted by silicon chip the conventional Wet chemical cleaning method of industry to clean its surface, remove the pollutent such as grease, organism, metallic impurity on surface, obtain the monocrystalline substrate cleaned.
Then the silicon chip after cleaning up is put into ThomasSwan3 × 2 " reaction chamber of LP-MOCVD epitaxial growth system; be first warmed up to 220 DEG C; toast 30 minutes (atmosphere of hydrogen), then be warmed up to 750 DEG C of bakings, 15 minutes (hydrogen and arsine mixed gas atmosphere).Then, cool to the cold condition of about 400 ~ 420 DEG C, the GaAs low temperature nucleation layer 20 of growth a layer thickness 15nm.Acting as of GaAs low temperature nucleation layer 20 forms one deck continuous print GaAs thin layer at silicon chip surface, prevents the large size three-dimensional island growth under high growth temperature condition, and discharges the large misfit strain energy of GaAs/Si film.
Step 202: make GaAs high temperature buffer layer and carry out in-situ annealing on GaAs low temperature nucleation layer.
High temperature buffer layer 30 is the involuntary Doped GaAs material grown at 610 ~ 690 DEG C of temperature, and thickness is about 1300 ~ 1900nm.This high temperature buffer layer mainly improves the crystal mass of GaAs material, and improves the surface topography of GaAs film on silicon substrate.Be specially: be first warmed up to 610 DEG C through 10 minutes, utilize MOCVD method to grow 300nmGaAs high temperature buffer layer; Then be warmed up to 690 DEG C through 6 minutes, growth 1500nmGaAs high temperature buffer layer, in the process of growth of this layer, need to insert in-situ annealing for several times, general 1 ~ 3 time.This in-situ annealing is carried out in hydrogen and arsine mixed gas atmosphere, and annealing way is from the thermal cycling annealing between 350 to 750 DEG C, circulates 3 ~ 5 times.Utilize this in-situ annealing, effectively can reduce high-density threading dislocation main in GaAs film, improve crystal mass.
Step 203: make strained super lattice structure on GaAs high temperature buffer layer.
Strained super lattice 40 is the 10nmIn in 5 cycles
0.15ga
0.85as/12nmGaAs compressive strain superstructure.By the stress field effect of this strained super lattice, can stop portions threading dislocation, reduce the threading dislocation density in GaAs film further, improve the crystal mass of GaAs/Si film.
The growth temperature of strained super lattice 40 is 680 DEG C, and growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl indium 1.1 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min.
Step 204: make strain interposed layer in strained super lattice structure.
Strain interposed layer 50 is the 10nmGaAs in 3 cycles
0.9p
0.1/ 12nmGaAs tensile strain superstructure.By the tension stress effect of this strained super lattice, the strain energy of equilibrium pressure strained super lattice 40, thus the total strain energy reducing or eliminate material.The growth temperature of strain interposed layer 50 is 680 DEG C, and growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min, phosphine 2.6 × 10
-3mol/min.
Step 205: make N-shaped ohmic contact layer on strain interposed layer.
N-shaped ohmic contact layer 60 is N-shaped heavy doping GaAs material, is used for making the n-type electrode of laser apparatus, and making method is: at 680 DEG C, grow the N-shaped Si Doped GaAs that 300nm is thick, doping content is 5 × 10
18cm
-3~ 10
19cm
-3, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min, silane 4.3 × 10
-6mol/min.
Step 206: make N-shaped limiting layer on N-shaped ohmic contact layer.
N-shaped limiting layer 70 is N-shaped Al
0.4ga
0.6as material, for laser light field is limited in active area, forms suitable light field pattern.In the present embodiment, growth temperature is 680 DEG C, and mixing Si concentration is 5 × 10
18cm
-3~ 10
19cm
-3, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min, silane 4.3 × 10
-6mol/min.
Step 207: make lower waveguide layer on N-shaped limiting layer.
Lower waveguide layer 80 is the involuntary Doped GaAs material of 100nm, and main and N-shaped limiting layer limits the light field pattern in laser material jointly, and growth temperature is 720 DEG C, and growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl aluminium 8.7 × 10
-6mol/min, arsine 6.7 × 10
-3mol/min.
Step 208: make multi-layer quantum point active area on lower waveguide layer.
Multi-layer quantum point active area 90 is 3 layers of quantum-dot structure that InAs and GaAs material is formed, and is involuntary doping, is used to provide the sharp of laser and penetrates gain.Every layer of quantum-dot structure includes InAs quantum dot layer, GaAs cap rock and GaAs sealing coat, and the making method of every layer of quantum-dot structure is:
At 480 DEG C DEG C, utilize MOCVD method to grow the InAs quantum dot 91 of involuntary doping, adopt traditional self-organizing growth method preparation, V/III than being 5 ~ 15, and growth source flow is: trimethyl indium 8.6 × 10
-7mol/min, arsine 4.9 × 10
-6mol/min;
At 480 DEG C DEG C, utilize MOCVD method to grow the GaAs cap rock 92, V/III of the involuntary doping of 6nm than being 50 ~ 100, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min;
At 600 DEG C, utilize MOCVD method to grow the GaAs sealing coat 93, V/III of the involuntary doping of 40nm than being 50 ~ 100, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min.
Step 209: make ducting layer on multi-layer quantum point active area.
Upper ducting layer 100 is the involuntary Doped GaAs material that 100nm is thick, and main and p-type limiting layer limits the light field pattern in laser material jointly, and growth temperature is 600 DEG C, and growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl aluminium 8.7 × 10
-6mol/min, arsine 6.7 × 10
-3mol/min.
Step 210: make p-type limiting layer on upper ducting layer.
What p-type limiting layer 110 was thickness 1300nm mixes zinc Al
0.4ga
0.6as material, is limited in active area by laser light field, forms suitable light field pattern, and growth temperature is 700 DEG C, and zinc doping concentration is 10
17cm
-3~ 10
18cm
-3, growth source flow is: trimethyl-gallium 2.6 × 10
-5mol/min, trimethyl indium 5.0 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min, zinc ethyl 9.2 × 10
-7mol/min ~ 9.2 × 10
-6mol/min.
Step 211: make p-type ohmic contact layer on p-type limiting layer.
P-type ohmic contact layer 120 is p-type heavy doping GaAs material, is used for making the p-type electrode of laser apparatus, and growth temperature is 550 DEG C, and zinc doping concentration is 10
19cm
-3~ 10
20cm
-3, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min, zinc ethyl 3.7 × 10
-6mol/min.
So far, then the metal organic chemical compound vapor deposition preparation method whole process of the silica-based InAs/GaAs quantum point laser material of the embodiment of the present invention is completed.Material complete growth process in the embodiment of the present invention 1 can utilize MOCVD once to complete, and adopts the atomic force microscope test result of the GaAs/Si thin-film material of Different hypothermia nucleating layer grown in thickness to see Fig. 4.The low temperature nucleation layer thickness distribution that three samples are corresponding is (a) 10nm, and (b) 15nm, (c) 20nm, within the scope of 10 μm × 10 μm, surfaceness is less than 4nm.Test result shows, when low temperature nucleation layer thinner thickness or thicker time, the surfaceness of GaAs/Si thin-film material all can be made to increase, and the crystal mass of material also can reduce.Therefore, the low temperature nucleation layer thickness of 15nm is the optimization thickness parameter that we adopt.
Fig. 5 is the atomic force microscope test result of the InAs/GaAs quantum dot layer adopting the growth of MOCVD device Ad hoc mode.As seen from the figure, InAs quantum dot distributes along the atomic steps on GaAs layer surface more equably, and area density is comparatively large, reaches 10
10~ 10
11/ cm
2the order of magnitude, the size of quantum dot is also relatively more even, only has the large cluster of the quantum dot of only a few.Compared with the InAs quantum dot grown on gaas substrates, the InAs quantum dot pattern of grown above silicon and quantity completely as broad as long.
Fig. 6 is the photoluminescence spectrum test result comparison diagram of the self-organization InAs/GaAs quantum point laser material sample at GaAs/Si mutation epitaxial thin film material and GaAs Grown.From test result, the photocathode of the InAs/GaAs quantum dot of grown above silicon, more than 50% on GaAs substrate, shows that the quantum dot of luminosity substantially and on GaAs substrate of quantum dot on silicon chip is close.In addition, because the compressive strain of quantum dot on silicon chip is relatively little, and the difference of quantum dot size, thus the photoluminescence spectrum peak wavelength red shift of its quantum dot is greater than 100nm, and this is more conducive to realizing in the application to optical communicating waveband.
Visible, the embodiment of the present invention at least has following beneficial effect:
In the MOCVD preparation method of the si-based quantum dot laser material provided in the embodiment of the present invention, MOCVD method is adopted to carry out material preparation completely, first on monocrystalline silicon piece, thin low temperature nucleation layer and thick high temperature buffer layer is adopted to obtain the higher GaAs/Si thin-film material of crystal mass, combine repeatedly original position cycle annealing and two kinds of strained super lattices (a kind of compressive strain and a kind of tensile strain superlattice again, realize total strain compensation) reduce the dislocation desity of silica-based GaAs material, obtain high quality GaAs/Si thin-film material.Wherein, thick high temperature buffer layer adopts growth velocity faster to complete.Then, for InAs/GaAs quantum dot laser active area, adopt low growth temperature, low growth velocity, the growth conditions of low V/III ratio completes; The growth conditions of Seedling height temperature, high growth rates, high V/III ratio is adopted to complete for thick limiting layer.The growth conditions of whole InAs/GaAs quantum dot laser light emitting region material structure and process, through optimizing, can obtain the photoluminescence spectrum intensity close with GaAs substrate, namely excellent quantum dot light emitting performance.The complete growth process of silica-based InAs/GaAs quantum point laser material, only MOCVD method need be adopted once to complete, compared with MBE method of the prior art, growth velocity improves greatly, can big area, evenly, complete Material growth and preparation high duplication, cost is cheaper, is more suitable for the demand of industrialization.
Last it is noted that above embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to previous embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (10)
1. a MOCVD preparation method for si-based quantum dot laser material, is characterized in that, utilizes MOCVD method to carry out the material preparation of following steps successively, comprising:
Clean monocrystalline substrate makes GaAs low temperature nucleation layer;
Described GaAs low temperature nucleation layer makes GaAs high temperature buffer layer;
Described GaAs high temperature buffer layer makes strained super lattice structure;
Described strained super lattice structure makes N-shaped ohmic contact layer;
Described N-shaped ohmic contact layer makes N-shaped limiting layer;
Described N-shaped limiting layer makes lower waveguide layer;
Described lower waveguide layer makes multi-layer quantum point active area;
Described multi-layer quantum point active area makes ducting layer;
Ducting layer makes p-type limiting layer on described;
Described p-type limiting layer makes p-type ohmic contact layer.
2. the MOCVD preparation method of si-based quantum dot laser material according to claim 1, is characterized in that, described method also comprises:
Between described strained super lattice structure and described N-shaped ohmic contact layer, MOCVD method is utilized to make strain interposed layer.
3. the MOCVD preparation method of si-based quantum dot laser material according to claim 1, is characterized in that:
The crystal face of described monocrystalline substrate is <100> crystal face, deflection <110> or <111> crystal face 4 ° ~ 6 °, for eigenmode or low-resistance n-type silicon chip, thickness 350 ~ 390 μm.
4. the MOCVD preparation method of si-based quantum dot laser material according to claim 1, is characterized in that:
The described monocrystalline substrate cleaning makes GaAs low temperature nucleation layer comprise: utilize Wet chemical cleaning method to clean monocrystalline substrate, more clean monocrystalline substrate is warmed up to 220 DEG C of bakings 30 minutes in atmosphere of hydrogen; Then 750 DEG C of bakings 15 minutes are warmed up at hydrogen and arsine mixed gas atmosphere; Finally cool to 400 ~ 420 DEG C of GaAs low temperature nucleation layer utilizing MOCVD method to grow 15 ~ 20nm, growth source flow is: trimethyl-gallium 2.7 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min;
And/or, describedly on described GaAs low temperature nucleation layer, make GaAs high temperature buffer layer comprise: be first warmed up to 610 ~ 640 DEG C through 10 minutes, utilize MOCVD method to grow 200 ~ 400nmGaAs high temperature buffer layer; Then 670 ~ 690 DEG C were warmed up to through 6 minutes, growth 1000 ~ 1500nmGaAs high temperature buffer layer, in process of growth, in hydrogen and arsine mixed gas atmosphere, carry out 1 ~ 3 in-situ heat cycle annealing, described thermal cycling is annealed into time thermal cycling annealing from 3 ~ 5 between 350 to 750 DEG C.
5. the MOCVD preparation method of si-based quantum dot laser material according to claim 1, is characterized in that, describedly on described GaAs high temperature buffer layer, makes strained super lattice structure comprise:
At 680 DEG C ~ 700 DEG C, utilize MOCVD method to grow the 8 ~ 12nmInGaAs/10 ~ 15nmGaAs superstructure in 5 ~ 10 cycles, wherein growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl indium 1.1 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min.
6. the MOCVD preparation method of si-based quantum dot laser material according to claim 2, is characterized in that, the making method of described strain interposed layer also comprises:
At 680 DEG C ~ 700 DEG C, utilize MOCVD method to grow the 8 ~ 12nmGaAsP/10 ~ 15nmGaAs superstructure in 3 ~ 6 cycles, wherein growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min, phosphine 2.6 × 10
-3mol/min.
7. the MOCVD preparation method of si-based quantum dot laser material according to claim 1, is characterized in that:
Describedly in described strained super lattice structure, make N-shaped ohmic contact layer also comprise: at 680 DEG C ~ 720 DEG C, utilize MOCVD method to grow the thick N-shaped Si Doped GaAs of 300 ~ 500nm, doping content is 5 × 10
18cm
-3~ 10
19cm
-3, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min, silane 4.3 × 10
-6mol/min;
And/or, describedly on described N-shaped ohmic contact layer, make N-shaped limiting layer comprise: at 700 DEG C ~ 720 DEG C, utilize MOCVD method to grow the thick N-shaped Si doped with Al GaAs of 1300 ~ 1800nm, doping content is 10
17cm
-3~ 10
18cm
-3, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl aluminium 2.6 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min, silane 4.3 × 10
-7mol/min ~ 4.3 × 10
-6mol/min;
And/or, describedly on described N-shaped limiting layer, make lower waveguide layer comprise: at 600 DEG C ~ 720 DEG C, utilize MOCVD method to grow the thick involuntary Doped GaAs of 80 ~ 100nm, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl aluminium 8.7 × 10
-6mol/min, arsine 6.7 × 10
-3mol/min.
8. the MOCVD preparation method of si-based quantum dot laser material according to claim 1, is characterized in that, the described multi-layer quantum point active area that makes on described lower waveguide layer comprises:
Described lower waveguide layer makes 3 ~ 10 layers of quantum-dot structure, and every layer of quantum-dot structure includes InAs quantum dot layer, GaAs cap rock and GaAs sealing coat, and the making method of every layer of quantum-dot structure is:
At 480 DEG C ~ 500 DEG C, utilize MOCVD method to grow the InAs quantum dot of involuntary doping, V/III than being 5 ~ 15, and growth source flow is: trimethyl indium 8.6 × 10
-7mol/min, arsine 4.9 × 10
-6mol/min;
At 480 DEG C ~ 500 DEG C, utilize MOCVD method to grow the GaAs cap rock of the involuntary doping of 6 ~ 10nm, V/III than being 50 ~ 100, and growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min;
At 580 DEG C ~ 600 DEG C, utilize MOCVD method to grow the GaAs sealing coat of the involuntary doping of 25 ~ 40nm, V/III than being 50 ~ 100, and growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min.
9. the MOCVD preparation method of si-based quantum dot laser material according to claim 1, is characterized in that:
Describedly on described multi-layer quantum point active area, make ducting layer comprise: at 600 DEG C ~ 700 DEG C, utilize MOCVD method to grow the involuntary Doped GaAs of 80 ~ 100nm, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, trimethyl aluminium 8.7 × 10
-6mol/min, arsine 6.7 × 10
-3mol/min;
And/or, describedly ducting layer makes p-type limiting layer on described and comprise: at 700 DEG C ~ 720 DEG C, utilize MOCVD method to grow 1300 ~ 1500nmp type doped with Al GaAs, doping content is 10
17cm
-3~ 10
18cm
-3, growth source flow is: trimethyl-gallium 2.6 × 10
-5mol/min, trimethyl indium 5.0 × 10
-5mol/min, arsine 6.7 × 10
-3mol/min, zinc ethyl 9.2 × 10
-7mol/min ~ 9.2 × 10
-6mol/min;
And/or, describedly on described p-type limiting layer, make p-type ohmic contact layer comprise: at 550 DEG C ~ 700 DEG C, utilize MOCVD method to grow the p-type heavy doping GaAs of 150 ~ 300nm, doping content is 10
19cm
-3~ 10
20cm
-3, growth source flow is: trimethyl-gallium 4.0 × 10
-5mol/min, arsine 2.7 × 10
-3mol/min, zinc ethyl 3.7 × 10
-6mol/min.
10. the MOCVD preparation method of si-based quantum dot laser material according to any one of claim 1 to 9, is characterized in that:
In order to utilize, MOCVD is disposable in situ completes preparation to the MOCVD preparation method of described si-based quantum dot laser material.
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