CN104777661A - 液晶显示面板及其制作方法 - Google Patents
液晶显示面板及其制作方法 Download PDFInfo
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- CN104777661A CN104777661A CN201510147089.9A CN201510147089A CN104777661A CN 104777661 A CN104777661 A CN 104777661A CN 201510147089 A CN201510147089 A CN 201510147089A CN 104777661 A CN104777661 A CN 104777661A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 46
- 238000010276 construction Methods 0.000 claims description 42
- 238000009413 insulation Methods 0.000 claims description 38
- 238000002161 passivation Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 239000007769 metal material Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910000967 As alloy Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- 239000011147 inorganic material Substances 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- -1 monox Inorganic materials 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- 229920000620 organic polymer Polymers 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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Abstract
一种液晶显示面板,其包括薄膜晶体管基板、对向基板以及夹设于所述薄膜晶体管基板与对向基板之间的液晶层,所述薄膜晶体管基板包括第一基底以及位于该第一基底上的公共电极,所述对向基板包括第二基底以及位于所述第二基底上的遮光结构,所述遮光结构为导电材料,该液晶显示面板还包括支撑结构以及与所述公共电极电性连接的电连接结构,该支撑结构位于该薄膜晶体管基板与该对向基板之间,所述电连接结构覆盖所述支撑结构并与所述遮光结构电性连接。本发明还提供一种液晶显示面板的制作方法。本发明所提供的液晶显示面板及其制作方法,能够在不增加液晶显示面板的厚度和制作成本的情况下降低公共电极的电阻,从而提升液晶显示面板的显示品质。
Description
技术领域
本发明涉及一种液晶显示面板及其制作方法。
背景技术
液晶显示面板是目前常用的平板显示面板,其中薄膜晶体管液晶显示面板(Thin Film Transistor Liquid Crystal Display,简称TFT-LCD)是液晶显示器中的主流产品。TFT-LCD由于其低成本、高良率以及良好的显示效果,使得其在显示面板领域占据着绝大部分的市场份额。尽管TFT-LCD的工艺已经日渐成熟,但画面品质仍需要不断提高,以满足消费者的挑剔需求。
液晶显示面板通过电场控制液晶分子的取向使液晶显示面板的透射率发生变化,从而实现显示功能。在液晶显示面板中,控制液晶分子的电场是由像素电极和公共电极之间的电压差来决定的。其中,公共电极的电阻对于液晶显示面板的显示品质和耗电量都有较大影响,公共电极的电阻越小,显示品质例如透过率、对比度等就越好,并且耗电越少。
目前通常采用增加公共电极的宽度、在公共电极上增设金属层等方式来降低公共电极的电阻。然而,上述方法存在降低液晶显示面板的开口率、增加液晶显示面板的厚度及制作成本等缺点。
发明内容
鉴于此,有必要提供一种液晶显示面板,其包括薄膜晶体管基板、对向基板以及夹设于所述薄膜晶体管基板与对向基板之间的液晶层,所述薄膜晶体管基板包括第一基底以及位于该第一基底上的公共电极,所述对向基板包括第二基底以及位于所述第二基底上的遮光结构,所述遮光结构为导电材料,该液晶显示面板还包括支撑结构以及与所述公共电极电性连接的电连接结构,该支撑结构位于该薄膜晶体管基板与该对向基板之间,所述电连接结构覆盖所述支撑结构并与所述遮光结构电性连接。
还有必要提供一种液晶显示面板的制作方法,该方法包括:
提供第一基底;
在所述第一基底上形成第一金属层,并在所述第一金属层上形成第一支撑部分;
在所述第一基底、第一金属层以及第一支撑部分上形成绝缘层;
在所述绝缘层上形成通道层以及第一支撑层,并在所述第一支撑层上形成第二支撑层,所述第一支撑层的位置与所述第一支撑部分的位置相对应;
在所述绝缘层上形成像素电极,并在所述第二支撑层上形成第三支撑层与第四支撑层;
在所述绝缘层上形成源极与漏极,并在所述第四支撑层上形成第五支撑层与第六支撑层,所述第一支撑部分以及所述第一支撑层、第二支撑层、第三支撑层、第四支撑层、第五支撑层以及第六支撑层共同构成支撑结构;
形成钝化层,并在所述钝化层上形成公共电极以及与所述公共电极电性连接的电连接结构,所述电连接结构对应所述支撑结构的位置,所述公共电极对应所述像素电极的位置;以及
提供对向基板,所述对向基板包括由导电材料形成的遮光结构,所述支撑结构将所述电连接结构抵持在所述对向基板的遮光结构上以使得所述电连接结构与所述遮光结构电性连接。
相较于现有技术,本发明所提供的液晶显示面板及其制作方法,通过由导电材料形成的遮光结构与公共电极电性连接,能够在不增加液晶显示面板的厚度和制作成本的情况下降低公共电极的电阻,从而提升液晶显示面板的显示品质。
附图说明
图1是本发明具体实施方式所提供的液晶显示面板的分解图。
图2是沿图1中II-II切割线的液晶显示面板的第一实施方式的剖面示意图。
图3是制作所述液晶显示面板的方法的流程图。
图4至图15是图3中各步骤的示意图。
主要元件符号说明
液晶显示面板 | 200 |
薄膜晶体管基板 | 210 |
对向基板 | 220 |
液晶层 | 230 |
第一基底 | 211 |
第一金属层 | 212 |
绝缘层 | 213 |
通道层 | 214 |
漏极 | 215a |
源极 | 215b |
像素电极 | 216 |
钝化层 | 217 |
电连接结构 | 218 |
公共电极 | 300 |
支撑结构 | 219 |
第一支撑部分 | 219a |
第二支撑部分 | 219b |
第一支撑层 | 2191 |
第二支撑层 | 2192 |
第三支撑层 | 2193 |
第四支撑层 | 2194 |
第五支撑层 | 2195 |
第六支撑层 | 2196 |
第二基底 | 221 |
遮光结构 | 222 |
彩色光阻 | 223 |
平坦化层 | 224 |
通孔 | 225 |
第一金属材料层 | M1 |
第二金属材料层 | M2 |
第一光阻层 | PR1 |
第二光阻层 | PR2 |
第三光阻层 | PR3 |
第四光阻层 | PR4 |
第五光阻层 | PR5 |
半导体层 | SC |
第一透明导电层 | TC1 |
第二透明导电层 | TC2 |
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
请参阅图1,本发明具体实施方式所提供的液晶显示面板200包括薄膜晶体管基板210、对向基板220以及夹设于所述薄膜晶体管基板210与对向基板220之间的液晶层230。在本实施方式中,所述对向基板220为一彩色滤光片基板。
请参阅图2,所述薄膜晶体管基板210包括第一基底211、形成于第一基底211上的薄膜晶体管、像素电极216、钝化层217、电连接结构218、公共电极300以及支撑结构219。薄膜晶体管包括第一金属层212、绝缘层213、通道层214、源极215a及漏极215b。本实施例以底栅极薄膜晶体管为例说明。所述第一金属层212形成在所述第一基底211上。所述绝缘层213形成在所述第一基底211上并覆盖所述第一金属层212。所述通道层214形成在所述绝缘层213上并与所述第一金属层212相对应。所述源极215a与漏极215b形成在所述绝缘层213及通道层214上,且分别覆盖所述通道层214相对的两端。所述像素电极216形成在所述绝缘层213上,被所述漏极215b部分覆盖,并与所述漏极215b电性连接。所述支撑结构219用于在所述薄膜晶体管基板210与对向基板220之间支撑起一定距离以容纳液晶层230。所述支撑结构219包括第一支撑部分219a与第二支撑部分219b。所述第一支撑部分219a与第二支撑部分219b位于不同的层级。在本实施方式中,所述第一支撑部分219a设置于所述第一金属层212上,并被所述绝缘层213覆盖。所述第二支撑部分219b设置于所述绝缘层213上与所述第一支撑部分219a相对应的位置。所述钝化层217覆盖所述像素电极216、源极215a、漏极215b、通道层214以及所述支撑结构219的第二支撑部分219b。所述公共电极300与电连接结构218形成在所述钝化层217上,其中所述电连接结构218的位置与所述支撑结构219的位置相对应,所述公共电极300的位置与所像素电极216的位置相对应。所述公共电极300与所述电连接结构218电性连接。
在本实施方式中,所述支撑结构219的第一支撑部分219a的材质为光阻。所述支撑结构219的第二支撑部分219b包括依次层叠的第一支撑层2191、第二支撑层2192、第三支撑层2193、第四支撑层2194、第五支撑层2195及第六支撑层2196。所述第二支撑层2192、第四支撑层2194及第六支撑层2196的材质为光阻。所述第一支撑层2191的材质与所述通道层214的材质相同。所述第三支撑层2193的材质与所述通道层214的材质相同。所述第五支撑层2195的材质与所述源极215a及漏极215b的材质相同。所述第一基底211的材质选自玻璃、石英、有机聚合物或其它可适用的透明材质。所述第一金属层212的材质选自金属或其它导电材料,如合金、金属氧化物、金属氮化物或金属氮氧化物等。所述绝缘层213的材质选自无机材料(例如氧化硅、氮化硅以及氮氧化硅等)、有机材料或其它可适用的材料及其组合。所述通道层214及所述第三支撑层2193的材质选自非晶硅、多晶硅或氧化半导体等适用于薄膜晶体管中通道层之材料。所述像素电极216及所述第一支撑层2191的材质选自透明导电材料,如氧化铟锡、氧化铟锌等。所述源极215a、漏极215b及所述第五支撑层2195的材质选自金属或其它导电材料,如合金、金属氧化物、金属氮化物或金属氮氧化物等。所述钝化层217的材质选自无机材料(例如氧化硅、氮化硅以及氮氧化硅等)、有机材料或其它可适用的材料及其组合。所述电连接结构218与公共电极300的材质选自透明导电材料,如氧化铟锡、氧化铟锌等。可以理解,在其它实施方式中,所述第二支撑部分219b可以只包括所述第一支撑层2191、第二支撑层2192、第三支撑层2193、第四支撑层2194、第五支撑层2195及第六支撑层2196中的一部分。
所述对向基板220包括第二基底221、遮光结构222、彩色光阻223以及平坦化层224。所述遮光结构222与所述彩色光阻223依次相间地形成在所述第二基底221上。所述彩色光阻223部分覆盖所述遮光结构222两侧的边缘。所述平坦化层224覆盖所述遮光结构222与所述彩色光阻223。所述平坦化层224及所述彩色光阻223对应遮光结构222的位置开设有通孔225。可以理解,所述遮光结构222与液晶显示面板200中的扫描线或数据线相重叠。
在本实施方式中,所述第二基底221的材质选自玻璃、石英、有机聚合物或其它可适用的透明材质。所述彩色光阻223包括红色彩色光阻、绿色彩色光阻以及蓝色彩色光阻。所述遮光结构222的材质选自金属或其它导电材料,如合金、金属氧化物、金属氮化物或金属氮氧化物等。所述平坦化层224的材质选自无机材料(例如氧化硅、氮化硅以及氮氧化硅等)、有机材料或其它可适用的材料及其组合。
所述支撑结构219从所述薄膜晶体管基板210向所述对向基板220延伸,所述支撑结构219上的电连接结构218抵持在所述对向基板220上。具体地,所述支撑结构219穿过所述平坦化层224上的通孔225,位于所述支撑结构219上方的电连接结构218与所述遮光结构222电性连接。
请参阅图3,为制作所述液晶显示面板200的流程图。该方法包括如下步骤:
步骤S201,请参阅图4,提供第一基底211,并在所述第一基底211上依次形成第一金属材料层M1以及第一光阻层PR1。所述第一基底211的材质选自玻璃、石英、有机聚合物或其它可适用的透明材质。所述第一金属材料层M1的材质选自金属或其它导电材料,如合金、金属氧化物、金属氮化物或金属氮氧化物等。
步骤S202,请参阅图5,通过第一灰阶光罩310图案化该第一金属材料层M1以及第一光阻层PR1,将所述第一金属材料层M1图案化为第一金属层212,并将所述第一光阻层PR1图案化为支撑结构219第一支撑部分219a,所述第一支撑部分219a位于所述第一金属层212上。
步骤S203,请参阅图6,在所述第一基底211、第一金属层212以及第一支撑部分219a上形成绝缘层213,并在所述绝缘层213上依次形成半导体层SC以及第二光阻层PR2。所述绝缘层213的材质选自无机材料(例如氧化硅、氮化硅以及氮氧化硅等)、有机材料或其它可适用的材料及其组合。所述半导体层SC的材质选自非晶硅、多晶硅或氧化半导体等适用于薄膜晶体管中通道层之材料。
步骤S204,请参阅图7,通过第二灰阶光罩320图案化该半导体层SC以及第二光阻层PR2,将所述半导体层SC图案化为通道层214以及支撑结构219的第一支撑层2191,并将所述第二光阻层PR2图案化为支撑结构219的第二支撑层2192。其中,所述通道层214形成在所述绝缘层213上并与所述第一金属层212相对应。所述第一支撑层2191形成在所述绝缘层213上并与所述第一支撑部分219a相对应。所述第二支撑层2192位于所述第一支撑层2191上。
步骤S205,请参阅图8,在所述绝缘层213、通道层214以及第二支撑层2192上形成第一透明导电层TC1,并在所述第一透明导电层TC1上形成第三光阻层PR3。所述第一透明导电层TC1的材质选自透明导电材料,如氧化铟锡、氧化铟锌等。
步骤S206,请参阅图9,通过第三灰阶光罩330图案化该第一透明导电层TC1以及第三光阻层PR3,将所述第一透明导电层TC1图案化为像素电极216以及支撑结构219的第三支撑层2193,并将所述第三光阻层PR3图案化为支撑结构219的第四支撑层2194。其中,所述像素电极216与所述通道层214相互绝缘。
步骤S207,请参阅图10,在所述绝缘层213、通道层214、第四支撑层2194以及像素电极216上形成第二金属材料层M2,并在所述第二金属材料层M2上形成第四光阻层PR4。所述第二金属材料层M2的材质选自金属或其它导电材料,如合金、金属氧化物、金属氮化物或金属氮氧化物等。
步骤S208,请参阅图11,通过第四灰阶光罩340图案化该第二金属材料层M2以及第四光阻层PR4,将所述第二金属材料层M2图案化为源极215a、漏极215b以及支撑结构219的第五支撑层2195,并将所述第四光阻层PR4图案化为支撑结构219的第六支撑层2196。其中,所述源极215a与漏极215b覆盖所述通道层214相对的两侧,且所述漏极215b部分覆盖所述像素电极216并与所述像素电极216电性连接。所述第一支撑部分219a以及所述第一支撑层2191、第二支撑层2192、第三支撑层2193、第四支撑层2194、第五支撑层2195以及第六支撑层2196共同构成所述支撑结构219。
步骤S209,请参阅图12,在所述绝缘层213、通道层214、源极215a、漏极215b、像素电极216以及第六支撑层2196上形成钝化层218,并在所述钝化层217上形成第二透明导电层TC2以及第五光阻层PR5。所述钝化层217的材质选自无机材料(例如氧化硅、氮化硅以及氮氧化硅等)、有机材料或其它可适用的材料及其组合。所述第二透明导电层TC2的材质选自透明导电材料,如氧化铟锡、氧化铟锌等。
步骤S210,请参阅图13,通过光罩350图案化该第二透明导电层TC2,将所述第二透明导电层TC2图案化为电连接结构218与公共电极300,之后去除该第五光阻层PR5。其中,所述电连接结构218与公共电极300,所述电连接结构218位于所述钝化层217上与所述支撑结构219对应的位置,所述公共电极300位于所述钝化层217上与所述像素电极216对应的位置。
步骤S211,请一并参阅图13与图14,提供对向基板220,将所述支撑结构219抵持在所述对向基板220上,并在所述对向基板220与钝化层217之间灌注液晶以形成液晶显示面板200。其中,所述对向基板220包括第二基底221、遮光结构222、彩色光阻223以及平坦化层224。所述遮光结构222与所述彩色光阻223依次相间地形成在所述第二基底221上,且所述彩色光阻223部分覆盖所述遮光结构222的边缘。所述平坦化层224覆盖所述遮光结构222与所述彩色光阻223。所述平坦化层224及所述彩色光阻223对应遮光结构222的位置开设有通孔225。所述支撑结构219穿过所述平坦化层224上的通孔225,位于所述支撑结构219上方的电连接结构218与所述遮光结构222电性连接。
在本实施方式中,所述第二基底221的材质选自玻璃、石英、有机聚合物或其它可适用的透明材质。所述彩色光阻223包括红色彩色光阻、绿色彩色光阻以及蓝色彩色光阻。所述遮光结构222的材质选自金属或其它导电材料,如合金、金属氧化物、金属氮化物或金属氮氧化物等。所述平坦化层224的材质选自无机材料(例如氧化硅、氮化硅以及氮氧化硅等)、有机材料或其它可适用的材料及其组合。
由此,所述金属材质的遮光结构222在实现遮光并将彩色光阻相互隔开效果的同时,通过电连接结构218与公共电极300电性连接,能够有效的降低的公共电极300的电阻。此外,该液晶显示面板200在形成第一金属层212、通道层214等结构时一并形成支撑结构219,能够节省制作薄膜晶体管基板与对向基板之间的间隔物的制程,生产成本更低。
以上实施例仅用以说明本发明的技术方案而非限制,尽管参照较佳实施例对本发明进行了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或等同替换,而不脱离本发明技术方案的精神和范围。
Claims (13)
1.一种液晶显示面板,其包括薄膜晶体管基板、对向基板以及夹设于所述薄膜晶体管基板与对向基板之间的液晶层,所述薄膜晶体管基板包括第一基底以及位于该第一基底上的公共电极,所述对向基板包括第二基底以及位于所述第二基底上的遮光结构,所述遮光结构为导电材料,该液晶显示面板还包括支撑结构以及与所述公共电极电性连接的电连接结构,该支撑结构位于该薄膜晶体管基板与该对向基板之间,所述电连接结构覆盖所述支撑结构并与所述遮光结构电性连接。
2.如权利要求1所述的液晶显示面板,其特征在于,所述遮光结构的材质为金属。
3.如权利要求1所述的液晶显示面板,其特征在于,所述薄膜晶体管基板还包括第一金属层、绝缘层、通道层、源极、漏极、像素电极以及钝化层,所述钝化层覆盖所述第一金属层、绝缘层、通道层、源极、漏极、像素电极以及支撑结构,所述电连接结构与所述公共电极设置在所述钝化层上。
4.如权利要求3所述的液晶显示面板,其特征在于,所述支撑结构包括第一支撑部分和第二支撑部分,所述第一支撑部分设置于所述第一金属层上并被所述绝缘层覆盖,所述第二支撑部分设置于所述绝缘层上与所述第一支撑部分相对应的位置并被所述钝化层覆盖。
5.如权利要求4所述的液晶显示面板,其特征在于,所述支撑结构的第二支撑部分包括依次层叠在所述绝缘层上的第一支撑层、第二支撑层、第三支撑层、第四支撑层、第五支撑层以及第六支撑层,所述第一支撑部分以及所述第二支撑层、第四支撑层及第六支撑层的材质为光阻。
6.如权利要求5所述的液晶显示面板,其特征在于,所述第一支撑层的材质与所述像素电极的材质相同,所述第三支撑层的材质与所述通道层的材质相同,所述第五支撑层的材质与所述源极及漏极的材质相同。
7.如权利要求3所述的液晶显示面板,其特征在于,所述第一金属层形成在所述第一基底上,所述绝缘层形成在所述第一基底上并覆盖所述第一金属层,所述通道层形成在所述绝缘层上并与所述第一金属层相对应,所述源极与漏极形成在所述绝缘层及通道层上且分别覆盖所述通道层相对的两端,所述像素电极形成在所述绝缘层上,被所述漏极部分覆盖并与所述漏极电性连接,所述钝化层覆盖所述像素电极、源极、漏极以及通道层。
8.如权利要求1所述的液晶显示面板,其特征在于,所述对向基板还包括彩色光阻以及平坦化层,所述遮光结构与彩色光阻依次相间地形成在所述第二基底上且所述彩色光阻部分覆盖所述遮光结构两侧的边缘,所述平坦化层覆盖所述遮光结构与所述彩色光阻,所述平坦化层及彩色光阻对应所述遮光结构的位置开设有通孔,所述支撑结构穿过所述平坦化层上的通孔使得位于所述支撑结构上方的电连接结构与所述遮光结构电性连接。
9.一种液晶显示面板的制作方法,该方法包括:
提供第一基底;
在所述第一基底上形成第一金属层,并在所述第一金属层上形成第一支撑部分;
在所述第一基底、第一金属层以及第一支撑部分上形成绝缘层;
在所述绝缘层上形成通道层以及第一支撑层,并在所述第一支撑层上形成第二支撑层,所述第一支撑层的位置与所述第一支撑部分的位置相对应;
在所述绝缘层上形成像素电极,并在所述第二支撑层上形成第三支撑层与第四支撑层;
在所述绝缘层上形成源极与漏极,并在所述第四支撑层上形成第五支撑层与第六支撑层,所述第一支撑部分以及所述第一支撑层、第二支撑层、第三支撑层、第四支撑层、第五支撑层以及第六支撑层共同构成支撑结构;
形成钝化层,并在所述钝化层上形成公共电极以及与所述公共电极电性连接的电连接结构,所述电连接结构对应所述支撑结构的位置,所述公共电极对应所述像素电极的位置;以及
提供对向基板,所述对向基板包括由导电材料形成的遮光结构,所述支撑结构将所述电连接结构抵持在所述对向基板的遮光结构上以使得所述电连接结构与所述遮光结构电性连接。
10.如权利要求9所述的液晶显示面板的制作方法,其特征在于,所述形成第一金属层以及第一支撑部分的方法包括:
在所述第一基底上依次形成第一金属材料层以及第一光阻层;以及
通过第一灰阶光罩图案化该第一金属材料层以及第一光阻层,将所述第一金属材料层图案化为第一金属层,并将所述第一光阻层图案化为第一支撑部分,所述第一支撑部分位于所述第一金属层上。
11.如权利要求10所述的液晶显示面板的制作方法,其特征在于,形成通道层、第一支撑层以及第二支撑层的方法包括:
在所述绝缘层上依次形成半导体层以及第二光阻层;以及
通过第二灰阶光罩图案化该半导体层以及第二光阻层,将所述半导体层图案化为通道层以及第一支撑层,并将所述第二光阻层图案化为第二支撑层,其中,所述通道层形成在所述绝缘层上并与所述第一金属层相对应。
12.如权利要求11所述的液晶显示面板的制作方法,其特征在于,形成像素电极、第三支撑层以及第四支撑层的方法包括:
在所述绝缘层、通道层以及第二支撑层上形成第一透明导电层,并在所述第一透明导电层上形成第三光阻层;以及
通过第三灰阶光罩图案化该第一透明导电层以及第三光阻层,将所述第一透明导电层图案化为像素电极以及第三支撑层,并将所述第三光阻层图案化为第四支撑层。
13.如权利要求12所述的液晶显示面板的制作方法,其特征在于,形成源极、漏极、第五支撑层与第六支撑层的方法包括:
在所述绝缘层、通道层、第四支撑层以及像素电极上形成第二金属层,并在所述第二金属层上形成第四光阻层;以及
通过第四灰阶光罩图案化该第二金属层以及第四光阻层,将所述第二金属层图案化为源极、漏极以及第五支撑层,并将所述第四光阻层图案化为第六支撑层。
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