CN104716193A - Thin film transistor and preparation method and application thereof - Google Patents
Thin film transistor and preparation method and application thereof Download PDFInfo
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Abstract
The invention discloses a thin film transistor. According to a preparation method of the thin film transistor, processing of halogen elements and other elements with a strong oxidizing property is carried out on two sides of a channel region of a metallic oxide semiconductor layer through plasma processing and technologies such as ion implantation or ion doping, the oxygen element in a metallic oxide is replaced, and low-resistance regions with the stable performance are formed in the two sides of the channel region, so that the thin film transistor is stable in electrical performance, and when the thin film transistor is miniaturized, the problem of electric field concentration is effectively solved, and the stability of the thin film transistor is improved. According to the preparation method of the thin film transistor, the manufacturing technology is simple, and the technology cost is low. According to a panel display device, the adopted thin film transistor is provided with a top gate structure, and the low-resistance regions with the stable performance are formed in the channel region; the thin film transistor can be miniaturized, and meanwhile the problem of electric field concentration is effectively solved; the resolution of the panel display device can be effectively improved, and the displaying quality is improved.
Description
Technical field
The present invention relates to Display Technique field, be specifically related to a kind of thin-film transistor and preparation method thereof, and the application in panel display apparatus.
Background technology
In recent years, along with the continuous increase of active matrix panel display apparatus size, the frequency of drive circuit improves constantly, and existing amorphous silicon film transistor mobility is difficult to meet the demands; The mobility of amorphous silicon film transistor is generally at 0.5cm
2about/Vs, and more than the active matrix panel display apparatus of 80in, when driving frequency is 120Hz, need 1cm
2the mobility of/more than Vs.
In prior art, the thin-film transistor of high mobility mainly contains polycrystalline SiTFT and metal oxide thin-film transistor.Wherein, quasi-molecule laser annealing crystallization (ELA) process costs required in polycrystalline SiTFT preparation process is very high, is no matter the maintenance maintenance of production process, production line, or the upgrading of production line, all can not realize easily; And along with people are to the increase of large display device demand, homogeneity and the stability of large-sized LTPS also receive test, and therefore, polycrystalline SiTFT of the prior art is still confined to the application in small-size display part.And with the English full name of IGZO(for Indium Gallium Zinc Oxide, be translated into indium gallium zinc oxide), the English full name of IZO(is Indium Zinc Oxide, be translated into indium zinc oxide) etc. metal oxide be the thin-film transistor of active layer, mobility is high, homogeneity good, transparent, manufacture craft is simple, the demand of large scale active matrix panel display apparatus can be met better, receive the extensive concern of people, become study hotspot in recent years.
But, metal oxide thin-film transistor of the prior art generally adopts bottom grating structure, as shown in Figure 1, the size of the described thin-film transistor of this structures shape is larger, inevitably create larger parasitic capacitance, and in the active matrix display devices comprising described metal oxide thin-film transistor, size due to thin-film transistor is difficult to reduce, the ratio of the image element circuit area occupied in image display area will be caused to uprise, have a strong impact on the aperture opening ratio of display unit, cannot high-resolution be realized.
The metal oxide thin-film transistor of top gate structure can by shorten the width of gate electrode and source interval between drain electrode layer realize the miniaturization of metal oxide thin-film transistor, solve the problem well.But the metal-oxide film crystalline size of top gate structure is less, when carrying out circuit integration or high speed, the electric field being applied to transistor can increase, due to tunnel effect, serious grid leakage current can be produced, increase the normal use that device power consumption even can affect thin-film transistor.In prior art; usual meeting partly leads top layer at metal oxide; with source the position that contacts of drain electrode layer; form low resistance region; the current path flowing to drain electrode layer from source electrode layer so at least comprises source electrode layer, the metal oxide semiconductor layer contacted with source electrode layer, low resistance region, channel formation region, low resistance region, the metal oxide semiconductor layer being contacted with drain electrode layer and drain electrode layer, thus realizes alleviating the object that electric field concentrates.
In prior art, mainly contain several as follows in the method for the formation low resistance region, top layer of metal oxide semiconductor layer:
One, after grid is formed, metal oxide semiconductor layer by with source the low metal material of the resistivity such as the overlying regions Direct precipitation aluminium that contacts of drain electrode layer, again by high temperature make above-mentioned metal enter by with source the top layer of metal oxide semiconductor layer that contacts of drain electrode layer, to form low resistance region.But, if the metal levels such as aluminium can not all be oxidized to metal oxide, very easily cause the short circuit between source/drain/gate.
Two, after grid is formed, by inert gases such as argon gas, the region contacted with Yuan drain electrode layer is processed by metal oxide semiconductor layer, destroy the ionic bond of metal oxide in oxide semiconductor, thus realize falling low-resistance effect.But when the device applying these thin-film transistors carries out subsequent high temperature processing procedure, these destroyed ionic bonds can be resumed again, and the resistance in the low resistance region obtained there will be the phenomenon of rising, the performance extremely unstable of low resistance region before.
Three, after grid is formed, by hydrogen to metal oxide semiconductor layer by with source the region that contacts of drain electrode layer process, to form low resistance region.But, the chemism of hydrogen atom is very high, and easy migration near channel interface, and the hydrogen atom of trace just can severe jamming oxide-semiconductor, defect struchures (trap) the state showed increased causing insulating barrier and channel layer Atom bonding to occur, shows the deterioration of electric property.
Summary of the invention
For this reason, to be solved by this invention is that the metal oxide thin-film transistor of top gate structure in prior art makes the problem of metal oxide thin-film transistor electric property deterioration due to low resistance region unstable properties, provides simple thin-film transistor of a kind of excellent performance, preparation method and preparation method thereof.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
A kind of thin-film transistor of the present invention, comprise substrate, at described substrate homonymy along the metal oxide semiconductor layer, gate insulator, grid layer, interlayer insulating film, the source/drain electrode layer that arrange perpendicular to substrate direction, source electrode in described source/drain electrode layer is connected with described metal oxide semiconductor layer electrical contact respectively with drain electrode, channel region both sides in described metal oxide semiconductor layer, the formation low resistance region, top layer in the region at least contacted with described source/drain electrode layer, halogen is contained in described low resistance region.
Described halogen is one or more in fluorine, chlorine, bromine.
The concentration of halogen described in described low resistance region is 1 × 10
12~ 1 × 10
18particle/square centimeter.
Resilient coating and/or light barriers is also provided with between described substrate and described metal oxide semiconductor layer.
Described light barriers is the stacked structure layer that one or more materials in copper, aluminium, molybdenum, titanium, indium tin oxide, indium-zinc oxide, doped polycrystalline silicon are formed; Described passivation layer is the stacked structure layer that one or more materials in silica, silicon nitride, silicon oxynitride, aluminium oxide, titanium oxide are formed.
The preparation method of a kind of thin-film transistor of the present invention, comprises the steps:
S1, form metal oxide semiconductor layer, gate insulator and grid layer successively from bottom to top over the substrate;
S2, the use top layer of halogen to metal oxide semiconductor layer channel region both sides process, and with the oxygen element in substituted metal oxide, form low resistance region;
S3, directly form the interlayer insulating film of cover gate layer on metal oxide semiconductor layer surface, interlayer insulating film forms source/drain electrode layer, and source electrode is connected with draining to contact with the low resistance region in described metal oxide semiconductor layer respectively.
The processing method on the top layer of metal oxide semiconductor layer described in step S2 is the one in plasma (plasma) process, ion implantation, ion doping.
The step directly forming resilient coating and/or light barriers over the substrate is also comprised before step S1.
Described resilient coating and/or described light barriers and described metal oxide semiconductor layer are formed in the homonymy of described substrate.
A kind of panel display apparatus of the present invention, comprises described thin-film transistor, and described panel display apparatus is liquid crystal indicator or organic light-emitting display device.
Technique scheme of the present invention has the following advantages compared to existing technology:
1, a kind of thin-film transistor of the present invention, pass through plasma treatment, the technique such as ion implantation or ion doping carries out the process of the strong oxidizing property elements such as halogen in metal oxide semiconductor layer channel region both sides, oxygen element in substituted metal oxide, in the low resistance region that the forming property of channel region both sides is stable, make described thin-film transistor not only stable electrical properties, and at least comprise source electrode layer from the current path that source electrode layer flows to drain electrode layer, the metal oxide semiconductor layer contacted with source electrode layer, low resistance region, channel formation region, low resistance region, be contacted with metal oxide semiconductor layer and the drain electrode layer of drain electrode layer, when miniaturization, the problem that effective solution electric field is concentrated, improve the stability of thin-film transistor.
2, the preparation method of a kind of thin-film transistor of the present invention, pass through plasma treatment, the technique such as ion implantation or ion doping carries out the process of the strong oxidizing property elements such as halogen in metal oxide semiconductor layer channel region both sides, oxygen element in substituted metal oxide, in formation low resistance region, channel region both sides, manufacture craft is simple, and the low resistance region stable performance formed, make described thin-film transistor not only stable electrical properties, and at least comprise source electrode layer from the current path that source electrode layer flows to drain electrode layer, the metal oxide semiconductor layer contacted with source electrode layer, low resistance region, channel formation region, low resistance region, be contacted with metal oxide semiconductor layer and the drain electrode layer of drain electrode layer, when miniaturization, the problem that effective solution electric field is concentrated.
3, a kind of panel display apparatus of the present invention, the thin-film transistor adopted not only has top gate structure, and the low resistance region of stable performance is formed at channel region, the concentrated problem of electric field can be effectively solved while miniaturization, effectively can improve the resolution of described panel display apparatus, promote display quality.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
The cutaway view of the metal oxide thin-film transistor of bottom grating structure in Fig. 1 prior art;
Fig. 2 a-Fig. 2 f is the preparation flow figure of thin-film transistor of the present invention.
In figure, Reference numeral is expressed as: 1-substrate, 11-resilient coating, 2-metal oxide semiconductor layer, 21-low resistance region, 3-gate insulator, 4-grid layer, 5-interlayer dielectric layer, 61-source electrode, 62-drain electrode.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.
The present invention can implement in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present invention fully will be conveyed to those skilled in the art, the present invention will only be limited by claim.In the accompanying drawings, for clarity, the size in layer and region and relative size can be exaggerated.Should be understood that, when element such as layer, region or substrate be referred to as " being formed in " or " being arranged on " another element " on " time, this element can be set directly on another element described, or also can there is intermediary element.On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, there is not intermediary element.
Embodiment 1
The present embodiment provides a kind of thin-film transistor and preparation method thereof, as shown in figure 2f, described thin-film transistor comprises substrate 1, at described substrate 1 homonymy along the metal oxide semiconductor layer 2 formed successively perpendicular to described substrate 1 direction, gate insulator 3, grid layer 4, interlayer insulating film 5, source/drain electrode layer, source electrode 61 in described source/drain electrode layer is connected with the electrical contact of described metal oxide semiconductor layer 2 respectively with drain electrode 62, channel region (namely facing the region of grid layer 4 in figure) both sides in described metal oxide semiconductor layer 2, the formation low resistance region, top layer 21 in the region at least contacted with described source/drain electrode layer.
Source electrode 61 in accompanying drawing 2f and the position of drain electrode 62 can exchange, and all can realize object of the present invention and belong to protection scope of the present invention.
Described low resistance region 21 containing halogen, described halogen be selected from but be not limited in fluorine, chlorine, bromine one or more, the preferred fluorine of the present embodiment, described in described low resistance region 21, the concentration of halogen is 1 × 10
16particle/square centimeter.
As other embodiments of the present invention, described in described low resistance region 21, the concentration of halogen is 1 × 10
12~ 1 × 10
18particle/square centimeter, all can realize object of the present invention and belong to protection scope of the present invention.
Resilient coating 11 and/or light barriers is also provided with, the preferred resilient coating 11 of the present embodiment between described substrate 1 and described metal oxide semiconductor layer 2.
Described resilient coating 11 is selected from but is not limited to the stacked structure layer of one or more materials in silica, silicon nitride, silicon oxynitride, aluminium oxide, titanium oxide, the present embodiment preferential oxidation silicon layer, and thickness is 200nm; As other embodiments of the present invention, the thickness of described resilient coating 11 is 20nm ~ 2 μm, all can realize object of the present invention, belong to protection scope of the present invention.
Described light barriers is selected from but is not limited to the stacked structure layer of one or more materials in copper, aluminium, molybdenum, titanium, indium tin oxide, indium-zinc oxide, doped polycrystalline silicon; described passivation layer is selected from but is not limited to the stacked structure layer that one or more materials in silica, silicon nitride, silicon oxynitride, aluminium oxide, titanium oxide are formed; all can realize object of the present invention, belong to protection scope of the present invention.
A kind of thin-film transistor that the present embodiment provides, the process of the strong oxidizing property elements such as halogen is carried out in metal oxide semiconductor layer 2 channel region (namely facing the region of grid layer 4 in figure) both sides, oxygen element in substituted metal oxide, in the low resistance region that the forming property of channel region both sides is stable, make described thin-film transistor not only stable electrical properties, and at least comprise source electrode layer from the current path that source electrode layer flows to drain electrode layer, the metal oxide semiconductor layer contacted with source electrode layer, low resistance region, channel formation region, low resistance region, be contacted with metal oxide semiconductor layer and the drain electrode layer of drain electrode layer, when miniaturization, the problem that effective solution electric field is concentrated, improve the stability of thin-film transistor.
Described thin-film transistor not only has top gate structure, and the low resistance region of stable performance is formed at channel region, can effectively solve the concentrated problem of electric field while miniaturization, effectively can improve the resolution of the panel display apparatus adopting described thin-film transistor, promote display quality.
The preparation method of described thin-film transistor, comprises the steps:
S1, as shown in Figure 2 a, directly forms resilient coating 11 by chemical vapor deposition method on described substrate 1; As shown in Figure 2 b, on described resilient coating 11, directly described metal oxide semiconductor layer 2 is formed by physical gas-phase deposition; As shown in Figure 2 c, on described metal oxide semiconductor layer 2, directly formed the insulating barrier covering described metal oxide semiconductor layer 2 by chemical vapor deposition method, and form gate insulator 3 by photoetching and plasma etching; On described gate insulator 3, directly form grid conducting layer by physical gas-phase deposition, then by photoetching and plasma etch process to described Gate Electrode Conductive pattern layers, form grid layer 4.
Described metal oxide semiconductor layer 2 is selected from but is not limited to the one in IGZO, IZO, ZTO, the preferred IGZO of the present embodiment; The thickness of metal oxide semiconductor layer 2 described in the present embodiment is 50nm.
After forming described metal oxide semiconductor layer 2, tested by the resistance value of Agilent semi-conductor test instrument (1500A) to described metal oxide semiconductor layer 2 purchased from Anjelen Sci. & Tech. Inc, the resistance value recorded is 10
9Ω/.
As other embodiments of the present invention, the thickness of described metal oxide semiconductor layer 2 can also be 30nm ~ 200nm, all can realize object of the present invention, belong to protection scope of the present invention; As other embodiments of the present invention, described metal oxide semiconductor layer 2 can also be formed by techniques such as solwution methods, all can realize object of the present invention, belong to protection scope of the present invention.
Described gate insulator 3 is selected from but is not limited to the stacked structure layer of one or more materials in silica, silicon nitride, silicon oxynitride, aluminium oxide, titanium oxide, the present embodiment preferential oxidation silicon layer; The thickness of gate insulator 3 described in the present embodiment is 300nm, and as other embodiments of the present invention, the thickness of described gate insulator 3 can also be 80nm ~ 500nm, all can realize object of the present invention, belong to protection scope of the present invention; As other embodiments of the present invention, described gate insulator 3 can also be formed by the technique such as solwution method, ald, all can realize object of the present invention, belong to protection scope of the present invention.
Described grid layer 4 is selected from but is not limited to the stacked structure layer of one or more materials in copper, aluminium, molybdenum, titanium, indium tin oxide, indium-zinc oxide, doped polycrystalline silicon, the preferred molybdenum layer of the present embodiment; The thickness of grid layer 4 described in the present embodiment is 100nm, and as other embodiments of the present invention, the thickness of described grid layer 4 can also be 50nm ~ 1um, all can realize object of the present invention, belong to protection scope of the present invention; As other embodiments of the present invention, described grid layer 4 can also be formed by techniques such as sputtering, evaporation, inkjet printing, solwution methods, all can realize object of the present invention, belong to protection scope of the present invention.
S2, as shown in Figure 2 d, by plasma treatment, under the lower pressure of 80mT, pass into the SF of 1000sccm
6gas, and the external power providing 2000W, produce the top layer of fluorine-containing plasma to metal oxide semiconductor layer 2 channel region both sides and process, and with the oxygen element in substituted metal oxide, forms low resistance region 21;
Tested by the resistance value of Agilent semi-conductor test instrument (1500A) to described low resistance region 21 and described channel region purchased from Anjelen Sci. & Tech. Inc, the resistance value recording described low resistance region 21 is 3 × 10
4Ω/, the resistance value of described channel region is still 10
9Ω/.As can be seen from test data, effectively can be reduced the resistance in this region of metal-oxide semiconductor (MOS) 2 by the injection of regional area halogen, and the resistance value in other regions can not be affected, effectively form low resistance region 21.
As other embodiments of the present invention, CF can also be used
4deng other fluoro-gas, all can realize object of the present invention, belong to protection scope of the present invention.
As other embodiments of the present invention, the methods such as plasma (plasma) process, ion implantation, ion doping can also be used to form described low resistance region 21, all can realize object of the present invention, belong to protection scope of the present invention.
S3, as shown in Figure 2 e, on described metal oxide semiconductor layer 2, the insulating barrier covering described metal oxide semiconductor layer 2 and described grid layer 4 is directly formed by chemical vapor deposition method, and by photoetching and plasma etching to described patterning insulating layers, form interlayer insulating film 4.As shown in figure 2f, on described interlayer insulating film 4, directly source/drain electrode layer is formed by physical gas-phase deposition, and by photoetching and plasma etching industrial patterning, formed and contact the source electrode 61 that connects respectively with described metal oxide semiconductor layer 2 and drain 62.
Described source/drain electrode layer is selected from but is not limited to the stacked structure layer of one or more materials in copper, aluminium, molybdenum, titanium, indium tin oxide, indium-zinc oxide, doped polycrystalline silicon, the preferred molybdenum of the present embodiment; The thickness of source/drain electrode layer described in the present embodiment is 300nm, and as other embodiments of the present invention, the thickness of described source/drain electrode layer can also be 100nm ~ 1 μm, all can realize object of the present invention, belong to protection scope of the present invention; As other embodiments of the present invention, described source/drain electrode layer can also be passed through the techniques such as evaporation, inkjet printing, solwution method and be formed, and all can realize object of the present invention, belong to protection scope of the present invention.
As other embodiments of the present invention, the step described substrate 1 being formed light barriers in step S1, can also be included in, the technique preparations such as physical vaporous deposition (PVD) can be passed through.
The preparation method of the thin-film transistor that the present embodiment provides, pass through plasma treatment, the technique such as ion implantation or ion doping carries out the process of the strong oxidizing property elements such as halogen in metal oxide semiconductor layer channel region both sides, oxygen element in substituted metal oxide, in formation low resistance region, channel region both sides, manufacture craft is simple, and the low resistance region stable performance formed, make described thin-film transistor not only stable electrical properties, and at least comprise source electrode layer from the current path that source electrode layer flows to drain electrode layer, the metal oxide semiconductor layer contacted with source electrode layer, low resistance region, channel formation region, low resistance region, be contacted with metal oxide semiconductor layer and the drain electrode layer of drain electrode layer, when miniaturization, the problem that effective solution electric field is concentrated.
Embodiment 2
The present embodiment provides a kind of thin-film transistor and preparation method thereof, and concrete structure and preparation method are with embodiment 1, and the concentration uniquely unlike halogen described in described low resistance region 21 is 1 × 10
12particle/square centimeter.
Carry out resistance value to the low-resistance region in the present embodiment to test, the resistance value recorded is 1 × 10
7Ω/.
Embodiment 3
The present embodiment provides a kind of thin-film transistor and preparation method thereof, and concrete structure and preparation method are with embodiment 1, and the concentration uniquely unlike halogen described in described low resistance region 21 is 1 × 10
18particle/square centimeter.
Carry out resistance value to the low-resistance region in the present embodiment to test, the resistance value recorded is 2 × 10
3Ω/.
Embodiment 4
The present embodiment provides a kind of thin-film transistor and preparation method thereof, and concrete structure and preparation method are with embodiment 1, and uniquely different unlike the halogen contained in described low resistance region 21, that pass in step S2 is chlorine (Cl
2).
Carry out resistance value to the low-resistance region in the present embodiment to test, the resistance value recorded is 1 × 10
5Ω/.
Embodiment 5
The present embodiment provides a kind of thin-film transistor and preparation method thereof, and concrete structure and preparation method are with embodiment 1, and uniquely different unlike the halogen contained in described low resistance region 21, what pass in step S2 is HBr gas.
Carry out resistance value to the low-resistance region in the present embodiment to test, the resistance value recorded is 2 × 10
5Ω/.
Comparative example
The present embodiment provides a kind of thin-film transistor and preparation method thereof, concrete structure and preparation method are with embodiment 1, unlike: the top layer, region that metal oxide semiconductor layer contacts with described source/drain electrode layer does not arrange low resistance region, not containing step S2 in preparation method.
Carry out stability test by the prompt human relations semi-conductor test instrument (1500A) purchased from Anjelen Sci. & Tech. Inc to the thin-film transistor described in above-described embodiment and comparative example, test data is as shown in the table:
Threshold voltage is the grid voltage making source semiconductor surface reach strong introspection, be distinguish transistor device conducting and by separation.During owing to just occurring strong inversion, the conduction electrons in surface channel is little, and the conductive capability of inversion layer is more weak, therefore leakage current is also smaller, gate source voltage when often regulation leakage current reaches a certain value is in actual use threshold voltage, and during use, the absolute value of threshold voltage is as well smaller.As can be seen from above-mentioned data, the thin-film transistor described in embodiment 1 ~ 5 is after arranging low resistance region, and its threshold voltage, compared with comparative example, has certain minimizing; As can be seen from data in embodiment 1 ~ 3, the doping of described halogen and the threshold voltage of thin-film transistor are the relation of negative correlation, namely the resistance in described thin-film transistor medium or low resistance region is lower, and the threshold voltage of described thin-film transistor is less, and performance is better; As can be seen from the data in embodiment 1,4 and 5, when Dopants amount is identical, in fluorine, chlorine and bromo element, doping the having the greatest impact to threshold voltage of fluorine element, preferably uses fluorine element.
The unsteadiness of thin-film transistor is mainly principal character with threshold voltage shift, as can be seen from above-mentioned data, compared with comparative example, the thin-film transistor described in embodiment 1 ~ 5 is after arranging low resistance region, its threshold voltage shift amount is very little, has splendid stability.
When ON state current is stationary source drain voltage, work in the source-drain current of saturation condition, when off-state current is stationary source drain voltage, source-drain current when gate voltage is zero; Switch current ratio is the ratio of ON state current and off-state current.Larger ON state current and less off-state current are the another important indicators weighing thin-film transistor stability, as can be seen from above-mentioned data, compared with comparative example, thin-film transistor described in embodiment 1 ~ 5 has larger ON state current and less off-state current after arranging low resistance region, and stability is better.As can be seen from data in embodiment 1 ~ 3, the relation that the doping of described halogen and the switch current ratio of thin-film transistor are proportionate; As can be seen from the data in embodiment 1,4 and 5, when Dopants amount is identical, in fluorine, chlorine and bromo element, doping the having the greatest impact to switch current ratio of fluorine element, preferably uses fluorine element
In sum, a kind of thin-film transistor of the present invention, the process of the strong oxidizing property elements such as halogen is carried out in metal oxide semiconductor layer channel region both sides, oxygen element in substituted metal oxide, in the low resistance region that the forming property of channel region both sides is stable, described thin-film transistor is made to have excellent stable electrical properties.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (10)
1. a thin-film transistor, comprise substrate, at described substrate homonymy along the metal oxide semiconductor layer, gate insulator, grid layer, interlayer insulating film, the source/drain electrode layer that arrange perpendicular to substrate direction, source electrode in described source/drain electrode layer is connected with described metal oxide semiconductor layer electrical contact respectively with drain electrode, channel region both sides in described metal oxide semiconductor layer, the formation low resistance region, top layer in the region at least contacted with described source/drain electrode layer, it is characterized in that, halogen is contained in described low resistance region.
2. thin-film transistor according to claim 1, is characterized in that, described halogen is one or more in fluorine, chlorine, bromine.
3. thin-film transistor according to claim 1 and 2, is characterized in that, in described low resistance region, the concentration of halogen is 1 × 10
12~ 1 × 10
18particle/square centimeter (atoms/cm
2).
4. thin-film transistor according to claim 3, is characterized in that, is also provided with resilient coating and/or light barriers between described substrate and described metal oxide semiconductor layer.
5. thin-film transistor according to claim 4, is characterized in that, described light barriers is the stacked structure layer that one or more materials in copper, aluminium, molybdenum, titanium, indium tin oxide, indium-zinc oxide, doped polycrystalline silicon are formed; Described passivation layer is the stacked structure layer that one or more materials in silica, silicon nitride, silicon oxynitride, aluminium oxide, titanium oxide are formed.
6. a preparation method for the arbitrary described thin-film transistor of claim 1-5, is characterized in that, comprise the steps:
S1, form metal oxide semiconductor layer, gate insulator and grid layer successively from bottom to top over the substrate;
S2, the use top layer of halogen to metal oxide semiconductor layer channel region both sides process, and with the oxygen element in substituted metal oxide, form low resistance region;
S3, directly form the interlayer insulating film of cover gate layer on metal oxide semiconductor layer surface, interlayer insulating film forms source/drain electrode layer, and source electrode is connected with draining to contact with the low resistance region in described metal oxide semiconductor layer respectively.
7. the preparation method of a kind of thin-film transistor according to claim 6, is characterized in that, the processing method on the top layer of metal oxide semiconductor layer described in step S2 is the one in plasma (plasma) process, ion implantation, ion doping.
8. the preparation method of a kind of thin-film transistor according to claim 6 or 7, is characterized in that, also comprises the step directly forming resilient coating and/or light barriers over the substrate before step S1.
9. the preparation method of a kind of thin-film transistor according to claim 8, is characterized in that, described resilient coating and/or described light barriers and described metal oxide semiconductor layer are formed in the homonymy of described substrate.
10. a panel display apparatus, is characterized in that, comprise the arbitrary described thin-film transistor of claim 1-5, described panel display apparatus is liquid crystal indicator or organic light-emitting display device.
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| CN107204377A (en) * | 2017-06-08 | 2017-09-26 | 深圳市华星光电技术有限公司 | A kind of preparation method of thin film transistor (TFT), array base palte and liquid crystal display panel |
| WO2019071751A1 (en) * | 2017-10-09 | 2019-04-18 | 深圳市华星光电半导体显示技术有限公司 | Tft substrate, manufacturing method thereof and oled panel manufacturing method |
| CN111052397A (en) * | 2017-10-31 | 2020-04-21 | 株式会社爱发科 | Thin film transistor and method of manufacturing the same |
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| CN107204377A (en) * | 2017-06-08 | 2017-09-26 | 深圳市华星光电技术有限公司 | A kind of preparation method of thin film transistor (TFT), array base palte and liquid crystal display panel |
| WO2018223500A1 (en) * | 2017-06-08 | 2018-12-13 | 深圳市华星光电半导体显示技术有限公司 | Preparation method for thin film transistor, array substrate, and liquid crystal display panel |
| CN107204377B (en) * | 2017-06-08 | 2019-11-26 | 深圳市华星光电半导体显示技术有限公司 | A kind of preparation method of thin film transistor (TFT), array substrate and liquid crystal display panel |
| WO2019071751A1 (en) * | 2017-10-09 | 2019-04-18 | 深圳市华星光电半导体显示技术有限公司 | Tft substrate, manufacturing method thereof and oled panel manufacturing method |
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