CN104020604B - Two-sided transparent display device - Google Patents
Two-sided transparent display device Download PDFInfo
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- CN104020604B CN104020604B CN201410274652.4A CN201410274652A CN104020604B CN 104020604 B CN104020604 B CN 104020604B CN 201410274652 A CN201410274652 A CN 201410274652A CN 104020604 B CN104020604 B CN 104020604B
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 110
- 239000002184 metal Substances 0.000 claims abstract description 110
- 239000011159 matrix material Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 238000003860 storage Methods 0.000 claims description 73
- 239000010409 thin film Substances 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000009413 insulation Methods 0.000 abstract description 18
- 230000000694 effects Effects 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 25
- 239000000463 material Substances 0.000 description 13
- 229910004205 SiNX Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052593 corundum Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 2
- -1 Mo or alloy Chemical class 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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Abstract
The invention discloses a two-sided transparent display device. The two-sided transparent display device comprises an array substrate, an opposite type substrate and a display dielectric layer. The array substrate is sequentially provided with a first black matrix pattern, a first metal layer pattern, a first metal insulation layer, a semiconductor layer, a second metal layer pattern, a protective insulation layer, a transparent organic insulation film and a pixel electrode in a matched mode, wherein the first black matrix pattern covers the first metal layer pattern and the second metal layer pattern. One side, facing the array substrate, of the opposite type substrate is provided with a second black matrix pattern in a matched mode. The second black matrix pattern covers the first metal layer pattern and the second metal layer pattern. The display dielectric layer is clamped between the array substrate and the opposite type substrate. The two-sided transparent display device can be watched from the obverse side and the reverse side, and the two sides are coincident in contrast ratio and are the same in display effect.
Description
Technical field
The present invention relates to Display Technique field, especially relate to a kind of two-side transparent display device.
Background technology
Thin Film Transistor-LCD (TFT-LCD) is by array base palte, colored filter substrate and to be located in this
Liquid crystal between two substrates is collectively forming.TFT-LCD without backlight is equivalent to a liquid crystal light valve plate, bright
Under ambient light is irradiated, this liquid crystal light valve plate is driven to make beholder see the scene at TFT-LCD rear by drive circuit.
The device of display screen rear scene is referred to as transparent display to make beholder see through display screen, more typically can be applicable to
To present, such as show windows etc. need to show that picture was used before showing physical item.The display floater that transparent display is arranged in pairs or groups
Adoptable Display Technique has a variety of, so being widely used.By material and the improvement of technique, Transparence Display
The transmitance of device gradually steps up.Transparent display without backlight is just becoming the emphasis of the interior research of industry.
Fig. 1 is the structural representation of two-side transparent display device, as shown in Figure 1 TFT-LCD display surface in prior art
Plate generally comprises colored filter substrate 12, array base palte 11 and sandwiched liquid crystal layer 13 therebetween and constitutes.At colour
(the figure such as the black-matrix layer for shading, chromatograph, common electrode, support column can be sequentially formed on filter sheet base plate 12
Do not show), on array base palte 11, can sequentially form as gate metal layer, gate insulator, semiconductor layer, source and drain gold
Belong to the (not shown) such as layer, source and drain insulating barrier, pixel electrode layer.
Transparent display without backlight is generally double-sided display, i.e. from display both sides it can be seen that picture.Colored filter
Owing to there is shading black matrix" in substrate-side, its reflection coefficient is relatively low, relatively low for contrast impact.And at array base palte
When side is observed, reflective due to gate metal and source and drain metal level, can cause watching when then watching from array base palte side, right
Lower relative to colored filter substrate side than degree, dazzle sense is serious.
For two-side transparent display, due to the metal reflective of array base palte side, can cause watching and then see from array base palte side
When seeing, contrast is low relative to colored filter substrate side, and dazzle sense is serious.
Summary of the invention
In view of this, for deficiency of the prior art, the present invention provides a kind of two-side transparent display device, by aobvious
The upper and lower both sides of metal level of showing device configure black matrix" simultaneously, to eliminate the array metal reflection for ambient, carry
Height displays contrast.
One embodiment of the invention provides a kind of two-side transparent display device, comprising:
Array basal plate, it is configured with the first black matrix pattern, the first metal layer pattern, the first metal-insulator successively
Layer, semiconductor layer, the second metal layer pattern, protect insulating barrier, transparent with machine dielectric film, pixel electrode, described the
One black matrix pattern covers described first and second metal pattern；
One counter substrate, is configured with the second black matrix pattern at it on this array base palte side, this second black square
Battle array this first and second metal pattern of pattern covers；
One display dielectric layer, is located between this array base palte and this counter substrate.
Further embodiment of this invention also provides for a kind of two-side transparent display device, comprising:
Array basal plate, it is configured with the first black matrix pattern, the first metal layer pattern, the first metal-insulator successively
Layer, semiconductor layer, the second metal layer pattern, protect insulating barrier, transparent with machine dielectric film, pixel electrode, second is black
Color matrix pattern；
One counter substrate；
Wherein, described first and second black matrix pattern is overlapping, and covers described first and second metal pattern；
One display dielectric layer, is located between this array base palte and this counter substrate.
Another embodiment of the present invention also provides for a kind of two-side transparent display device, comprising:
Array basal plate, has two surfaces, arranges the first black matrix pattern in surface thereof；On its another surface
It is configured with successively: the second black matrix pattern, the first metal layer pattern, the first metal dielectric layer, semiconductor layer, second
Metal layer pattern, protects insulating barrier, transparent with machine dielectric film, pixel electrode；
One counter substrate；
Wherein, described first and second black matrix pattern is overlapping, and covers described first and second metal pattern；
One display dielectric layer, is located between this array base palte and this counter substrate.
Yet another embodiment of the invention also provides for a kind of two-side transparent display device, comprising:
Array basal plate, has two surfaces, arranges the first black matrix pattern in surface thereof；On its another surface
Being configured with successively: the first metal layer pattern, the first metal dielectric layer, semiconductor layer, the second metal layer pattern, protection is absolutely
Edge layer, transparent with machine dielectric film, pixel electrode；
One counter substrate, is configured with the second black matrix pattern at it on this array base palte side；
Wherein, described first and second black matrix pattern is overlapping, and covers described first and second metal pattern；
One display dielectric layer, is located between this array base palte and this counter substrate.
In the middle of above-described embodiment, this first metal layer pattern includes: scan line, storage electrode；
This second metal layer pattern includes: data wire, the first public electrode wire, the second public electrode wire, thin film transistor (TFT)
Source electrode, drain electrode；
This first public electrode wire, has the discontinuous distributing line being uniformly distributed gap；
This second public electrode wire, the first public electrode wire is arranged in a crossed manner surrounds pixel region with this；
This data wire, is arranged on the median vertical line of this pixel region, and through this gap of this first public electrode wire；
This scan line, is arranged on the horizontal central line of this pixel region, and setting intersected with each other with this data wire；
This thin film transistor (TFT), is arranged at this data wire and this scan line intersection region；
This pixel electrode, and be electrically connected with this thin film transistor (TFT) by the first contact hole；
This storage electrode, be configured at this pixel electrode lower section, and with this first public electrode and this second public electrode
Projection overlapping, and this storage electrode is electrically connected with this pixel electrode by the second contact hole.
In the middle of above-described embodiment, this storage electrode is configured at this first public electrode and this second public electrode view field
The upper left corner and the first area in the lower right corner, and this storage electrode configures the second bump region at this projection lap non-,
Form this second contact hole on it, be used for the equipotential link between this pixel electrode.
In the middle of above-described embodiment, this storage electrode is configured at this first public electrode and this second public electrode view field
The lower left corner and first area, the upper right corner, and this storage electrode configures the second bump region at this projection lap non-,
Form this second contact hole on it, be used for the equipotential link between this pixel electrode.
In the middle of above-described embodiment, in the lower section of this pixel electrode, this first area of this storage electrode is first public with this
Electrode and this second public electrode view field partly overlap and form storage electric capacity.
In the middle of above-described embodiment, in the lower section of this pixel electrode, this first area of this storage electrode is first public with this
Electrode is completely overlapped with this second public electrode view field forms storage electric capacity.
In the middle of above-described embodiment, this first and second public electrode wire is configured at the lower section of this pixel electrode, and with this pixel
Electrode partly overlaps.
The present invention compared with prior art, has an advantage in that: the two-side transparent display device that the present invention provides can be from positive and negative two
Face is watched, and the contrast on its two sides is consistent, and display effect is identical.
Accompanying drawing explanation
Fig. 1 is the structural representation of two-side transparent display device in prior art；
Fig. 2 is the structural representation of the two-side transparent display device of first embodiment of the invention；
Fig. 3 is the pixelated array structural representation of the two-side transparent display device shown in Fig. 2 of the present invention；
Fig. 4 (a) is the floor map of the black matrix" layer pattern of dot structure shown in Fig. 3 of the present invention；
Fig. 4 (b) is the sectional drawing in the black matrix" layer pattern AA ' direction of dot structure shown in Fig. 3 of the present invention；
Fig. 5 (a) is the plane graph of the first metal layer pattern of dot structure shown in Fig. 2 of the present invention；
Fig. 5 (b) is the sectional drawing in the first metal layer pattern AA ' direction of dot structure shown in Fig. 2 of the present invention；
Fig. 6 (a) is the plane graph of the semiconductor layer pattern of dot structure shown in Fig. 2 of the present invention；
Fig. 6 (b) is the sectional drawing in the semiconductor layer pattern AA ' direction of dot structure shown in Fig. 2 of the present invention；
Fig. 7 (a) is the plane graph of the second metal layer pattern of dot structure shown in Fig. 2 of the present invention；
Fig. 7 (b) is the sectional drawing in the second metal layer pattern AA ' direction of dot structure shown in Fig. 2 of the present invention；
Fig. 8 (a) is the plane graph of the contact hole pattern of dot structure shown in Fig. 2 of the present invention；
Fig. 8 (b) is the sectional drawing in the contact hole pattern AA ' direction of dot structure shown in Fig. 2 of the present invention；
Fig. 9 (a) is the plane graph of the pixel electrode pattern of dot structure shown in Fig. 2 of the present invention；
Fig. 9 (b) is the sectional drawing in the pixel electrode pattern AA ' direction of dot structure shown in Fig. 2 of the present invention；
Figure 10 is the structural representation of the two-side transparent display device of second embodiment of the invention；
Figure 11 is the pixelated array structural representation of the two-side transparent display device shown in Figure 10 of the present invention；
Figure 12 (a) is the plane graph of the upside black matrix pattern of dot structure shown in Figure 10 of the present invention；
Figure 12 (b) is the sectional drawing in the black matrix pattern AA ' direction, upside of dot structure shown in Figure 10 of the present invention；
Figure 13 (a) is the plane graph of the contact hole pattern of dot structure shown in Figure 10 of the present invention；
Figure 13 (b) is the sectional drawing in the contact hole pattern AA ' direction of dot structure shown in Figure 10 of the present invention；
Figure 14 (a) is the plane graph of the pixel electrode pattern of dot structure shown in Figure 10 of the present invention；
Figure 14 (b) is the sectional drawing in the pixel electrode pattern AA ' direction of dot structure shown in Figure 10 of the present invention；
Figure 15 is the structure of the two-side transparent display device of third embodiment of the invention；
Figure 16 (a) is the plane graph of the pixelated array structure of the two-side transparent display device shown in Figure 15 of the present invention；
Figure 16 (b) is the AA ' direction of the pixelated array structure of the two-side transparent display device shown in Figure 15 of the present invention
Sectional drawing；
Figure 17 is the structure of the two-side transparent display device of fourth embodiment of the invention；
Figure 18 (a) is the plane graph of pixelated array structure based on the two-side transparent display device shown in Figure 17；
Breaking of the AA ' direction that Figure 18 (b) is pixelated array structure based on the two-side transparent display device shown in Figure 17
Face figure；
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground describes, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Base
Embodiment in the present invention, it is all that those of ordinary skill in the art are obtained under not making creative work premise
Other embodiments, broadly fall into the scope of protection of the invention.
Embodiment one:
Fig. 2 is the structural representation of the two-side transparent display device of first embodiment of the invention.As in figure 2 it is shown, it is a kind of double
Face transparent display, comprising: array basal plate 21, it is configured with the first black matrix pattern 24, TFT successively
Array device 25；One counter substrate 22, is configured with the second black matrix pattern at it on this array base palte 21 side
26, this second black matrix pattern 26 covers this tft array device 25；One display dielectric layer 23, such as liquid crystal, sandwiched
Between this array base palte 21 and this counter substrate 22.
Wherein this tft array device 25 is specially and arranges the first metal layer pattern, the first gold medal successively on this array base palte
Belong to insulating barrier, semiconductor layer, the second metal layer pattern, protect insulating barrier, transparent with machine dielectric film, pixel electrode,
Described first black matrix pattern covers described first and second metal pattern.
Fig. 3 is the pixelated array structural representation of the two-side transparent display device shown in Fig. 2 of the present invention.As it is shown on figure 3,
This first metal layer pattern includes: scan line 32, storage electrode 33；This second metal layer pattern includes: data wire 35,
First public electrode wire the 36, second public electrode wire, the source electrode of thin film transistor (TFT), drain electrode 37；This first public electrode
Line 36, has the discontinuous distributing line being uniformly distributed gap；This second public electrode wire, with this first public electrode wire 3
6 arranged in a crossed manner surround pixel region；This data wire 35, is arranged on the median vertical line of this pixel region, and through this
This gap of one public electrode wire；This scan line 32, is arranged on the horizontal central line of this pixel region, and with this data wire
35 settings intersected with each other；This thin film transistor (TFT), is arranged at this data wire and this scan line 32 intersection region；This pixel electricity
Pole 39, and be electrically connected with this thin film transistor (TFT) by the first contact hole；This storage electrode 33, is configured at this pixel electricity
Pole 39 lower section, and overlapping with the projection of this second public electrode with this first public electrode 36, and this storage electrode
33 are electrically connected with this pixel electrode 39 by the second contact hole.
As an embodiment, this storage electrode is configured at the left side of this first public electrode and this second public electrode view field
Upper angle and the first area in the lower right corner, and this storage electrode configures the second bump region, on it at this projection lap non-
Form this second contact hole, be used for the equipotential link between this pixel electrode.
As another embodiment, this storage electrode is configured at this first public electrode and this second public electrode view field
The lower left corner and first area, the upper right corner, and this storage electrode configures the second bump region, on it at this projection lap non-
Form this second contact hole, be used for the equipotential link between this pixel electrode.
In the above-described embodiments, in the lower section of this pixel electrode, this first area of this storage electrode and this first common electrical
The view field of pole and this second public electrode view field partly overlaps and forms storage electric capacity.
In the middle of above-described embodiment, in the lower section of this pixel electrode, this first area of this storage electrode is first public with this
Electrode is completely overlapped with the view field of this second public electrode forms storage electric capacity.
In the middle of above-described embodiment, this first and second public electrode wire is configured at the lower section of this pixel electrode, and with this pixel
Electrode partly overlaps.
Based on the pixelated array structure shown in Fig. 3, the manufacture method of its corresponding array base palte is as follows:
Step a, on the glass substrate, coats black-matrix material, and black-matrix material is black organic material.Black
The thickness of matrix is 0.01 micron to 2 microns, by exposure, develop, formed after the technique such as solidification as shown in Figure 4 black
Color matrix pattern.
Step b, on black matrix", by chemical vapour deposition technique, forms inorganic insulation layer.The material of inorganic insulation layer
Material can select SiNx, SiO2 or Al2O3 etc., preferably SiNx material.Then, spatter above inorganic insulation layer
Penetrating formation the first metal layer, the first metal layer can be metal or the alloys such as Ti, Al, Cu, Mo, the first metal layer
Thickness beCoated by photoresist, expose, develop, etch, the technique such as stripping, formed such as Fig. 5
The patterns such as shown scan line, storage electrode.
Step c, above the first metal layer, by chemical vapour deposition technique, forms semiconductor layer.Semi-conducting material
Can be non-crystalline silicon, polysilicon or oxide semiconductor etc., thickness beExtremelyThe pattern of semiconductor layer
As shown in Figure 6, the center of pixel it is positioned at.
Step d, above semiconductor layer, sputtering forms the second metal level.Second metal level can be Ti, Al, Cu,
The metals such as Mo or alloy, the thickness of source and drain metal level isCoated by photoresist, expose, develop,
The techniques such as etching, stripping, form the patterns such as data wire as shown in Figure 7, public electrode wire, TFT drain.
Step e, on the second metal level, by chemical vapour deposition technique, forms inorganic insulation layer.Inorganic insulation layer
Material can select SiNx, SiO2 or Al2O3 etc., preferably SiNx material.The thickness of inorganic insulation layer is Above inorganic insulation layer, coating organic insulator, the thickness of organic insulator is at 1um-3um.?
The top of organic insulator, is coated by photoresist, exposes, develops, etches, the technique such as stripping, is formed such as Fig. 8 institute
The contact hole pattern shown, including the contact hole above TFT drain, and the contact hole above storage electrode.
Step f, above organic insulating film and contact hole, sputtering forms transparent conductive film, preferably ito thin film,
Thickness isExtremelyCoated by photoresist, expose, develop, etch, the technique such as stripping, formed such as figure
Pixel electrode pattern shown in 9.
Embodiment two:
Figure 10 is the structural representation of the two-side transparent display device of second embodiment of the invention, shown in Figure 10, the present invention
A kind of two-side transparent display device is provided, comprising: array basal plate 101, it is configured with the first black matrix" successively
Pattern 104, tft array device 105, the second black matrix pattern 106；One counter substrate 102, such as colorized optical filtering
Plate base；Wherein, described first and second black matrix" 104,106 pattern overlapping, and cover described tft array device 1
05；One display dielectric layer 103, such as liquid crystal, is located between this array base palte 101 and this counter substrate 102.
See Figure 10,11, wherein, this tft array device 105 is specially the first metal layer pattern, first metal-insulator
Layer, semiconductor layer 114, the second metal layer pattern, protect insulating barrier, transparent with machine dielectric film, pixel electrode.
Figure 11 is the pixelated array structural representation of the two-side transparent display device shown in Figure 10 of the present invention.Such as Figure 11 institute
Showing, this first metal layer pattern includes: scan line 112, storage electrode 113；This second metal layer pattern includes: number
According to line 115, first public electrode wire the 116, second public electrode wire, the source electrode of thin film transistor (TFT), drain electrode 117；This is years old
One public electrode wire 116, has the discontinuous distributing line being uniformly distributed gap；This second public electrode wire, with this first
Public electrode wire 116 is arranged in a crossed manner surrounds pixel region；This data wire 115, is arranged on the median vertical line of this pixel region
On, and through this gap of this first public electrode wire；This scan line 112, is arranged on the horizontal central line of this pixel region
On, and with this data wire 115 setting intersected with each other；This thin film transistor (TFT), is arranged at this data wire and this scan line 112
Intersection region；This pixel electrode 110, and be electrically connected with this thin film transistor (TFT) by the first contact hole；This storage electrode
113, be configured at this pixel electrode 110 lower section, and hand over this second public electrode with this first public electrode 116
The projection in fork region is overlapping, and this storage electrode 113 is electrically connected with this pixel electrode 110 by the second contact hole.
As an embodiment, this storage electrode is configured at the left side of this first public electrode and this second public electrode view field
Upper angle and the first area in the lower right corner, and this storage electrode configures the second bump region, on it at this projection lap non-
Form this second contact hole, be used for the equipotential link between this pixel electrode.
As another embodiment, this storage electrode is configured at this first public electrode and this second public electrode view field
The lower left corner and first area, the upper right corner, and this storage electrode configures the second bump region, on it at this projection lap non-
Form this second contact hole, be used for the equipotential link between this pixel electrode.
In the above-described embodiments, in the lower section of this pixel electrode, this first area of this storage electrode and this first common electrical
Pole and this second public electrode view field partly overlap and form storage electric capacity.
In the middle of above-described embodiment, in the lower section of this pixel electrode, this first area of this storage electrode is first public with this
Electrode is completely overlapped with this second public electrode view field forms storage electric capacity.
In the middle of above-described embodiment, this first and second public electrode wire is configured at the lower section of this pixel electrode, and with this pixel
Electrode partly overlaps.
Based on the picture element array structure shown in Figure 11, the manufacture method of corresponding array base palte, at the figure of the second metal level
Before the making step of case similar with embodiment one:
Step a, on the glass substrate, coats black-matrix material, and black-matrix material is black organic material.Black
The thickness of matrix is 0.01 micron to 2 microns, by exposure, develops, forms black matrix pattern after the technique such as solidification.
Step b, on black matrix", by chemical vapour deposition technique, forms inorganic insulation layer.The material of inorganic insulation layer
Material can select SiNx, SiO2 or Al2O3 etc., preferably SiNx material.Then, spatter above inorganic insulation layer
Penetrating formation the first metal layer, the first metal layer can be metal or the alloys such as Ti, Al, Cu, Mo, the first metal layer
Thickness beCoated by photoresist, expose, develop, etch, the technique such as stripping, form scanning
The pattern such as line, storage electrode.
Step c, above the first metal layer, by chemical vapour deposition technique, forms semiconductor layer.Semi-conducting material
Can be non-crystalline silicon, polysilicon or oxide semiconductor etc., thickness beExtremelyThe pattern of semiconductor layer
It is positioned at the center of pixel.
Step d, above semiconductor layer, sputtering forms the second metal level.Second metal level can be Ti, Al, Cu,
The metals such as Mo or alloy, the thickness of source and drain metal level isCoated by photoresist, expose, develop,
The techniques such as etching, stripping, form the patterns such as data wire, public electrode wire, TFT drain.
Based on the dot structure shown in Figure 11, manufacture method corresponding after the pattern of the second metal level is as follows:
Step e, on the second metal level, by chemical vapour deposition technique, forms inorganic insulation layer.Inorganic insulation layer
Material can select SiNx, SiO2 or Al2O3 etc., preferably SiNx material.Applied over black at inorganic insulation layer
Color matrix material, black-matrix material is black organic material.The thickness of black matrix" is 0.01 micron to 2 microns, logical
Overexposure, develops, forms upside black matrix pattern as shown in figure 12 after the technique such as solidification.
Step f, above the black-matrix layer of upside, by chemical vapour deposition technique, forms inorganic insulation layer.Inorganic
The material of insulating barrier can select SiNx, SiO2 or Al2O3 etc., preferably SiNx material.Upper at inorganic insulation layer
Side, coat by photoresist, exposes, develops, etches, the technique such as stripping, and formation contacts hole pattern as shown in fig. 13 that
Case, including the contact hole above TFT drain, and the contact hole above storage electrode.
Step g, above inorganic insulating membrane and contact hole, sputtering forms transparent conductive film, preferably ito thin film,
Thickness isExtremelyCoated by photoresist, expose, develop, etch, the technique such as stripping, formed such as figure
Pixel electrode pattern shown in 14.
Such as Figure 14 a, shown in 14b, this pixel electrode structure, particularly as follows: provide array basal plate, it sequentially forms the
One black matrix" 111, scan line 112, storage electrode 113, semiconductor layer 114, data wire 115, public electrode wire
116, TFT drain 117, contact hole 118, upside black matrix" 119, pixel electrode 110.Scan line 112 with deposit
Storage electrode 113 is same layer metal, referred to as first layer metal；Data wire 115, public electrode wire 116 and TFT drain 117
For same layer metal, referred to as second layer metal.The pattern of first layer metal and the pattern of second layer metal are all located at the first black
Between matrix 119 and the second black matrix" 111.The surrounding of pixel is surrounded by common electrode lines 116 and is formed, scan line 112
Passing through at pixel region interstitial chiasma with data wire 115, TFT device is positioned at the center of pixel, and pixel electrode 110 is by connecing
Contact hole 118 is connected to the storage electrode 113 of the first metal layer and forms storage electric capacity with common electrode lines 116.
Embodiment three:
Figure 15 is the structure of the two-side transparent display device of third embodiment of the invention.As shown in figure 15, the present invention provides
A kind of two-side transparent display device, comprising: array basal plate 151, has two surfaces, arranges the in surface thereof
One black matrix pattern 154；Its another surface is configured with successively: the second black matrix pattern 156, the first metal
Layer pattern 154, tft array device 155；One counter substrate 152, such as colored filter substrate；Wherein, described
One, two black matrix patterns 154,156 are overlapping, and cover described tft array device 155；One display dielectric layer 153,
Such as liquid crystal, it is located between this array base palte 151 and this counter substrate 152.
Wherein, tft array device 155 is specially the first metal dielectric layer, semiconductor layer, the second metal layer pattern, protects
Protect insulating barrier, transparent with machine dielectric film, pixel electrode.
Figure 16 (a) is the plane graph of the pixelated array structure of the two-side transparent display device shown in Figure 15 of the present invention；Figure
16 (b) is the sectional drawing in the AA ' direction of the pixelated array structure of the two-side transparent display device shown in Figure 15 of the present invention.
Such as Figure 16 (a), shown in 16 (b), it is provided that array basal plate, it is followed successively by glass side black matrix" 161, scanning
Line 162, storage electrode 163, semiconductor layer 164, data wire 165, public electrode wire 166, TFT drain 167,
Face side black matrix" 168, contact hole 169, pixel electrode 160.Scan line 162 and storage electrode 163 are same layer gold
Belong to, referred to as first layer metal；Data wire 165, public electrode wire 166 and TFT drain 167 are same layer metal, are referred to as
Second layer metal.The surrounding of pixel is surrounded by common electrode lines 166 and is formed, and scan line 162 and data wire 165 are in pixel
District's interstitial chiasma passes through, and TFT device is positioned at the center of pixel, and pixel electrode 160 is connected to first by contact hole 169
The storage electrode 163 of metal level and common electrode lines 166 form storage electric capacity.
Described tft array device on array base palte in this embodiment, dot structure, pel array and preparation method thereof
Similar to the above embodiments, do not repeat them here.
Embodiment four:
Figure 17 is the structure of the two-side transparent display device of third embodiment of the invention.As shown in figure 17, it is provided that Yi Zhongshuan
Face transparent display, comprising: array basal plate 171, has two surfaces, arranges the first black in surface thereof
Matrix pattern 174；Its another surface is configured with successively: tft array device 175；One counter substrate 172, as
Colored filter substrate, is configured with the second black matrix pattern 176 at it on this array base palte side；Wherein, institute
State first and second black matrix pattern overlap 174,176, and cover described tft array device 175；One display dielectric layer 1
73, such as liquid crystal, it is located between this array base palte and this counter substrate.
Wherein, described tft array device 175 specially the first metal layer pattern, the first metal dielectric layer, semiconductor layer,
Second metal layer pattern, protects insulating barrier, transparent with machine dielectric film, pixel electrode.
Figure 18 (a) is the plane graph of pixelated array structure based on the two-side transparent display device shown in Figure 17；Figure 18
B () is the sectional drawing in the AA ' direction of pixelated array structure based on the two-side transparent display device shown in Figure 17.As
Figure 18 (a), shown in 18 (b), it is provided that array basal plate, it is followed successively by glass side black matrix" 181, scan line 1
82, storage electrode 183, semiconductor layer 184, data wire 185, public electrode wire 186, TFT drain 187, contact
Hole 188, pixel electrode 189.Scan line 182 and storage electrode 183 are same layer metal, referred to as first layer metal；Number
It is same layer metal according to line 185, public electrode wire 186 and TFT drain 187, referred to as second layer metal.The surrounding of pixel
Being surrounded by common electrode lines 186 and formed, scan line 182 is passed through at pixel region interstitial chiasma with data wire 185, TFT device
Part is positioned at the center of pixel, pixel electrode 189 by contact hole 188 be connected to the storage electrode 183 of the first metal layer with
Common electrode lines 186 forms storage electric capacity.
On array base palte in this embodiment described tft array device, dot structure, pel array and making side thereof
Method is similar to the above embodiments, does not repeats them here.
The above, the only detailed description of the invention of the present invention, but protection scope of the present invention is not limited thereto, and any
Those familiar with the art, in the technical scope that the invention discloses, can readily occur in change or replace, answering
Contain within protection scope of the present invention.Therefore, protection scope of the present invention should be with described scope of the claims
It is as the criterion.
Claims (12)
1. a two-side transparent display device, comprising:
Array basal plate, it is configured with the first black matrix pattern, the first metal layer pattern, the first metal-insulator successively
Layer, semiconductor layer, the second metal layer pattern, protect insulating barrier, transparent with machine dielectric film, pixel electrode, described the
One black matrix pattern covers described first and second metal layer pattern；
One counter substrate, is configured with the second black matrix pattern at it on this array base palte side, this second black square
Battle array this first and second metal layer pattern of pattern covers；
One display dielectric layer, is located between this array base palte and this counter substrate；
This first metal layer pattern includes: scan line, storage electrode；
This second metal layer pattern includes: data wire, the first public electrode wire, the second public electrode wire, thin film transistor (TFT)
Source electrode, drain electrode；
This first public electrode wire, has the discontinuous distributing line being uniformly distributed gap；
This second public electrode wire, the first public electrode wire is arranged in a crossed manner surrounds pixel region with this；
This data wire, is arranged in the vertical direction of this pixel region, and through this gap of this first public electrode wire；
This scan line, is arranged in the horizontal direction of this pixel region, and setting intersected with each other with this data wire；
This thin film transistor (TFT), is arranged at this data wire and this scan line intersection region；
This pixel electrode, and be electrically connected with this thin film transistor (TFT) by the first contact hole；
This storage electrode, is configured at the lower section of this pixel electrode, and with this first public electrode and this second public electrode
Projection overlap, and this storage electrode is by the second contact hole and the electric connection of this pixel electrode.
2. a two-side transparent display device, comprising:
Array basal plate, it is configured with the first black matrix pattern, the first metal layer pattern, the first metal-insulator successively
Layer, semiconductor layer, the second metal layer pattern, protect insulating barrier, transparent with machine dielectric film, pixel electrode, second is black
Color matrix pattern；
One counter substrate；
Wherein, described first and second black matrix pattern is overlapping, and covers described first and second metal pattern；
One display dielectric layer, is located between this array base palte and this counter substrate；
This first metal layer pattern includes: scan line, storage electrode；
This second metal layer pattern includes: data wire, the first public electrode wire, the second public electrode wire, thin film transistor (TFT)
Source electrode, drain electrode；
This first public electrode wire, has the discontinuous distributing line being uniformly distributed gap；
This second public electrode wire, the first public electrode wire is arranged in a crossed manner surrounds pixel region with this；
This data wire, is arranged in the vertical direction of this pixel region, and through this gap of this first public electrode wire；
This scan line, is arranged in the horizontal direction of this pixel region, and setting intersected with each other with this data wire；
This thin film transistor (TFT), is arranged at this data wire and this scan line intersection region；
This pixel electrode, and be electrically connected with this thin film transistor (TFT) by the first contact hole；
This storage electrode, is configured at the lower section of this pixel electrode, and with this first public electrode and this second public electrode
Projection overlap, and this storage electrode is by the second contact hole and the electric connection of this pixel electrode.
3. a two-side transparent display device, comprising:
Array basal plate, has two surfaces, arranges the first black matrix pattern in surface thereof；On its another surface
Being configured with successively: the first metal layer pattern, the first metal dielectric layer, semiconductor layer, the second metal layer pattern, protection is absolutely
Edge layer, transparent with machine dielectric film, pixel electrode, and the second black matrix pattern；
One counter substrate；
Wherein, described first and second black matrix pattern is overlapping, and covers described first and second metal pattern；
One display dielectric layer, is located between this array base palte and this counter substrate；
This first metal layer pattern includes: scan line, storage electrode；
This second metal layer pattern includes: data wire, the first public electrode wire, the second public electrode wire, thin film transistor (TFT)
Source electrode, drain electrode；
This first public electrode wire, has the discontinuous distributing line being uniformly distributed gap；
This second public electrode wire, the first public electrode wire is arranged in a crossed manner surrounds pixel region with this；
This data wire, is arranged in the vertical direction of this pixel region, and through this gap of this first public electrode wire；
This scan line, is arranged in the horizontal direction of this pixel region, and setting intersected with each other with this data wire；
This thin film transistor (TFT), is arranged at this data wire and this scan line intersection region；
This pixel electrode, and be electrically connected with this thin film transistor (TFT) by the first contact hole；
This storage electrode, is configured at the lower section of this pixel electrode, and with this first public electrode and this second public electrode
Projection overlap, and this storage electrode is by the second contact hole and the electric connection of this pixel electrode.
4. a two-side transparent display device, comprising:
Array basal plate, has two surfaces, arranges the first black matrix pattern in surface thereof；On its another surface
Being configured with successively: the first metal layer pattern, the first metal dielectric layer, semiconductor layer, the second metal layer pattern, protection is absolutely
Edge layer, transparent with machine dielectric film, pixel electrode；
One counter substrate, is configured with the second black matrix pattern at it on this array base palte side；
Wherein, described first and second black matrix pattern is overlapping, and covers described first and second metal pattern；
One display dielectric layer, is located between this array base palte and this counter substrate；
This first metal layer pattern includes: scan line, storage electrode；
This second metal layer pattern includes: data wire, the first public electrode wire, the second public electrode wire, thin film transistor (TFT)
Source electrode, drain electrode；
This first public electrode wire, has the discontinuous distributing line being uniformly distributed gap；
This second public electrode wire, the first public electrode wire is arranged in a crossed manner surrounds pixel region with this；
This data wire, is arranged in the vertical direction of this pixel region, and through this gap of this first public electrode wire；
This scan line, is arranged in the horizontal direction of this pixel region, and setting intersected with each other with this data wire；
This thin film transistor (TFT), is arranged at this data wire and this scan line intersection region；
This pixel electrode, and be electrically connected with this thin film transistor (TFT) by the first contact hole；
This storage electrode, is configured at the lower section of this pixel electrode, and with this first public electrode and this second public electrode
Projection overlap, and this storage electrode is by the second contact hole and the electric connection of this pixel electrode.
5. the two-side transparent display device as according to any one of claim 1-4, it is characterised in that: this storage electrode includes
It is configured at this first public electrode and the upper left corner of this second public electrode view field and the first area in the lower right corner,
And this storage electrode configures the second bump region at this projection lap non-, it is formed this second contact hole, uses
Equipotential link between this pixel electrode.
6. the two-side transparent display device as according to any one of claim 1-4, it is characterised in that: this storage electrode includes
It is configured at this first public electrode and the lower left corner of this second public electrode view field and first area, the upper right corner, and
This storage electrode configures the second bump region at this projection lap non-, it is formed this second contact hole, is used for
And the equipotential link between this pixel electrode.
7. two-side transparent display device as claimed in claim 5, it is characterised in that: in the lower section of this pixel electrode, this is deposited
The formation that partly overlaps of this first area and this first public electrode of storage electrode and this second public electrode view field is deposited
Storage electric capacity.
8. two-side transparent display device as claimed in claim 5, it is characterised in that: in the lower section of this pixel electrode, this is deposited
This first area of storage electrode is deposited with this completely overlapped formation of the second public electrode view field with this first public electrode
Storage electric capacity.
9. two-side transparent display device as claimed in claim 5, it is characterised in that: this first and second public electrode wire configures
In the lower section of this pixel electrode and overlapping with this pixel electrode part.
10. two-side transparent display device as claimed in claim 6, it is characterised in that: in the lower section of this pixel electrode, this is deposited
The formation that partly overlaps of this first area and this first public electrode of storage electrode and this second public electrode view field is deposited
Storage electric capacity.
11. two-side transparent display devices as claimed in claim 6, it is characterised in that: in the lower section of this pixel electrode, this is deposited
This first area of storage electrode is deposited with this completely overlapped formation of the second public electrode view field with this first public electrode
Storage electric capacity.
12. two-side transparent display devices as claimed in claim 6, it is characterised in that: this first and second public electrode wire configures
In the lower section of this pixel electrode and overlapping with this pixel electrode part.
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| CN105093750B (en) * | 2015-08-14 | 2018-11-23 | 深圳市华星光电技术有限公司 | Tft array substrate structure and preparation method thereof |
| CN105223749A (en) * | 2015-10-10 | 2016-01-06 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display device |
| CN110197839B (en) * | 2018-06-15 | 2021-08-03 | 京东方科技集团股份有限公司 | Double-sided display panel, preparation method thereof and double-sided display device |
| KR20200087370A (en) | 2019-01-10 | 2020-07-21 | 삼성디스플레이 주식회사 | Display device |
| CN110262115A (en) * | 2019-06-26 | 2019-09-20 | 京东方科技集团股份有限公司 | Display panel and its manufacturing method, display device |
| CN113238415B (en) * | 2021-05-13 | 2023-05-23 | 北京京东方技术开发有限公司 | Transparent display panel and display device |
| WO2022261826A1 (en) * | 2021-06-15 | 2022-12-22 | 京东方科技集团股份有限公司 | Display panel and manufacturing method therefor, and display apparatus |
| CN115708011B (en) * | 2021-08-19 | 2024-06-11 | 北京京东方技术开发有限公司 | Display substrate, preparation method thereof and display device |
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| CN102998845A (en) * | 2012-12-11 | 2013-03-27 | 京东方科技集团股份有限公司 | Liquid crystal display (LCD) and display device |
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| US9041894B2 (en) * | 2010-02-04 | 2015-05-26 | Sharp Kabushiki Kaisha | Liquid-crystal display device |
| CN103165471A (en) * | 2013-02-19 | 2013-06-19 | 京东方科技集团股份有限公司 | Thin film transistor and manufacture method and display device thereof |
| CN103365013B (en) * | 2013-07-01 | 2016-03-02 | 京东方科技集团股份有限公司 | A kind of array base palte, LCDs and display device |
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| CN102998845A (en) * | 2012-12-11 | 2013-03-27 | 京东方科技集团股份有限公司 | Liquid crystal display (LCD) and display device |
| CN103680326A (en) * | 2013-12-26 | 2014-03-26 | 南京中电熊猫液晶显示科技有限公司 | High-opening pixel structure and repairing method thereof |
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