BRPI0916082A2 - método para formação de um diodo emissor de luz convertido com fósforo (pc - led), diodo emissor de luz convertido com fósforo (pc - led), e, estrutura intermediária de diodo emissor de luz (led) - Google Patents
método para formação de um diodo emissor de luz convertido com fósforo (pc - led), diodo emissor de luz convertido com fósforo (pc - led), e, estrutura intermediária de diodo emissor de luz (led)Info
- Publication number
- BRPI0916082A2 BRPI0916082A2 BRPI0916082A BRPI0916082A BRPI0916082A2 BR PI0916082 A2 BRPI0916082 A2 BR PI0916082A2 BR PI0916082 A BRPI0916082 A BR PI0916082A BR PI0916082 A BRPI0916082 A BR PI0916082A BR PI0916082 A2 BRPI0916082 A2 BR PI0916082A2
- Authority
- BR
- Brazil
- Prior art keywords
- led
- phosphorus
- converted
- forming
- intermediate structure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2031/00—Other particular articles
- B29L2031/001—Profiled members, e.g. beams, sections
- B29L2031/003—Profiled members, e.g. beams, sections having a profiled transverse cross-section
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2031/00—Other particular articles
- B29L2031/772—Articles characterised by their shape and not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/265,050 US20100109025A1 (en) | 2008-11-05 | 2008-11-05 | Over the mold phosphor lens for an led |
PCT/IB2009/054808 WO2010052621A1 (en) | 2008-11-05 | 2009-10-29 | Overmolded phosphor lens for an led |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI0916082A2 true BRPI0916082A2 (pt) | 2015-11-10 |
Family
ID=41580149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0916082A BRPI0916082A2 (pt) | 2008-11-05 | 2009-10-29 | método para formação de um diodo emissor de luz convertido com fósforo (pc - led), diodo emissor de luz convertido com fósforo (pc - led), e, estrutura intermediária de diodo emissor de luz (led) |
Country Status (9)
Country | Link |
---|---|
US (1) | US20100109025A1 (pt) |
EP (1) | EP2342761A1 (pt) |
JP (1) | JP2012507847A (pt) |
KR (1) | KR20110084294A (pt) |
CN (1) | CN102203965A (pt) |
BR (1) | BRPI0916082A2 (pt) |
RU (1) | RU2011122609A (pt) |
TW (1) | TW201034262A (pt) |
WO (1) | WO2010052621A1 (pt) |
Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100993317B1 (ko) * | 2008-08-26 | 2010-11-09 | 삼성전기주식회사 | 발광 다이오드 패키지의 렌즈 제조방법 |
JP4486701B1 (ja) | 2008-11-06 | 2010-06-23 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
CN102067348B (zh) * | 2009-04-06 | 2013-03-27 | 松下电器产业株式会社 | 氮化物系半导体元件及其制造方法 |
US20140175377A1 (en) * | 2009-04-07 | 2014-06-26 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US20120086035A1 (en) * | 2009-05-11 | 2012-04-12 | SemiLEDs Optoelectronics Co., Ltd. | LED Device With A Light Extracting Rough Structure And Manufacturing Methods Thereof |
US8434883B2 (en) | 2009-05-11 | 2013-05-07 | SemiOptoelectronics Co., Ltd. | LLB bulb having light extracting rough surface pattern (LERSP) and method of fabrication |
TW201041192A (en) * | 2009-05-11 | 2010-11-16 | Semi Photonics Co Ltd | LED device with a roughened light extraction structure and manufacturing methods thereof |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
DE112010003715T8 (de) * | 2009-09-20 | 2013-01-31 | Viagan Ltd. | Baugruppenbildung von elektronischen Bauelementen auf Waferebene |
WO2011077704A1 (ja) * | 2009-12-25 | 2011-06-30 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
JP5462078B2 (ja) * | 2010-06-07 | 2014-04-02 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP5426484B2 (ja) * | 2010-06-07 | 2014-02-26 | 株式会社東芝 | 半導体発光装置の製造方法 |
TW201201419A (en) * | 2010-06-29 | 2012-01-01 | Semileds Optoelectronics Co | Wafer-type light emitting device having precisely coated wavelength-converting layer |
US9382470B2 (en) | 2010-07-01 | 2016-07-05 | Samsung Electronics Co., Ltd. | Thiol containing compositions for preparing a composite, polymeric composites prepared therefrom, and articles including the same |
CN103080081B (zh) * | 2010-07-01 | 2016-05-04 | 三星电子株式会社 | 用于发光颗粒-聚合物复合物的组合物、发光颗粒-聚合物复合物和包含该发光颗粒-聚合物复合物的器件 |
JP5767062B2 (ja) * | 2010-09-30 | 2015-08-19 | 日東電工株式会社 | 発光ダイオード封止材、および、発光ダイオード装置の製造方法 |
CN103180945B (zh) * | 2010-10-27 | 2016-12-07 | 皇家飞利浦电子股份有限公司 | 用于制造发光器件的层压支撑膜及其制造方法 |
KR101591991B1 (ko) | 2010-12-02 | 2016-02-05 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조 방법 |
TWI441361B (zh) * | 2010-12-31 | 2014-06-11 | Interlight Optotech Corp | 發光二極體封裝結構及其製造方法 |
US8785953B2 (en) | 2011-03-25 | 2014-07-22 | Samsung Electronics Co., Ltd. | Light emitting diode, manufacturing method thereof, light emitting diode module, and manufacturing method thereof |
DE102011102350A1 (de) * | 2011-05-24 | 2012-11-29 | Osram Opto Semiconductors Gmbh | Optisches Element, optoelektronisches Bauelement und Verfahren zur Herstellung dieser |
US9269878B2 (en) * | 2011-05-27 | 2016-02-23 | Lg Innotek Co., Ltd. | Light emitting device and light emitting apparatus |
JP5887638B2 (ja) | 2011-05-30 | 2016-03-16 | 億光電子工業股▲ふん▼有限公司Everlight Electronics Co.,Ltd. | 発光ダイオード |
KR101771175B1 (ko) * | 2011-06-10 | 2017-09-06 | 삼성전자주식회사 | 광전자 소자 및 적층 구조 |
JP2013084889A (ja) * | 2011-09-30 | 2013-05-09 | Toshiba Corp | 半導体発光装置及びその製造方法 |
US9726928B2 (en) | 2011-12-09 | 2017-08-08 | Samsung Electronics Co., Ltd. | Backlight unit and liquid crystal display including the same |
KR101288918B1 (ko) * | 2011-12-26 | 2013-07-24 | 루미마이크로 주식회사 | 파장변환층이 형성된 발광소자 제조방법 및 그에 따라 제조된 발광소자 |
US8907362B2 (en) | 2012-01-24 | 2014-12-09 | Cooledge Lighting Inc. | Light-emitting dies incorporating wavelength-conversion materials and related methods |
US8896010B2 (en) | 2012-01-24 | 2014-11-25 | Cooledge Lighting Inc. | Wafer-level flip chip device packages and related methods |
WO2013112435A1 (en) | 2012-01-24 | 2013-08-01 | Cooledge Lighting Inc. | Light - emitting devices having discrete phosphor chips and fabrication methods |
JP6203759B2 (ja) * | 2012-02-10 | 2017-09-27 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | Ledチップの製造方法 |
FR2989521B1 (fr) * | 2012-04-11 | 2014-11-28 | Waitrony Optoelectronics Ltd | Appareil de projection d'image a led |
US9818919B2 (en) * | 2012-06-11 | 2017-11-14 | Cree, Inc. | LED package with multiple element light source and encapsulant having planar surfaces |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
WO2014108782A1 (en) | 2013-01-09 | 2014-07-17 | Koninklijke Philips N.V. | Shaped cavity in substrate of a chip scale package led |
JP2014175362A (ja) * | 2013-03-06 | 2014-09-22 | Toshiba Corp | 半導体発光素子及びその製造方法 |
US9660154B2 (en) * | 2013-05-20 | 2017-05-23 | Koninklijke Philips N.V. | Chip scale light emitting device package with dome |
CN104347785A (zh) * | 2013-08-07 | 2015-02-11 | 广州众恒光电科技有限公司 | 一种模具法荧光粉胶层涂覆工艺 |
US9410664B2 (en) | 2013-08-29 | 2016-08-09 | Soraa, Inc. | Circadian friendly LED light source |
CN104779338A (zh) * | 2014-01-15 | 2015-07-15 | 展晶科技(深圳)有限公司 | 发光二极管封装体的制造方法 |
US9343443B2 (en) | 2014-02-05 | 2016-05-17 | Cooledge Lighting, Inc. | Light-emitting dies incorporating wavelength-conversion materials and related methods |
KR102189129B1 (ko) * | 2014-06-02 | 2020-12-09 | 엘지이노텍 주식회사 | 발광 소자 모듈 |
KR102171024B1 (ko) * | 2014-06-16 | 2020-10-29 | 삼성전자주식회사 | 반도체 발광소자 패키지의 제조 방법 |
CN106688115B (zh) | 2014-09-12 | 2019-06-14 | 世迈克琉明有限公司 | 半导体发光元件的制造方法 |
KR101638124B1 (ko) * | 2014-10-23 | 2016-07-11 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조 방법 |
KR101645329B1 (ko) * | 2015-04-29 | 2016-08-04 | 루미마이크로 주식회사 | 형광수지 성형 베이스몰드를 이용하는 발광다이오드 장치 제조방법 |
US20180287020A1 (en) * | 2015-04-27 | 2018-10-04 | Lumimicro Corp. Ltd. | Light-emitting diode device, manufacturing method therefor, and mold used therefor |
US20170338387A1 (en) * | 2015-06-30 | 2017-11-23 | Seoul Semiconductor Co., Ltd. | Light emitting diode |
KR20170003182A (ko) * | 2015-06-30 | 2017-01-09 | 서울반도체 주식회사 | 발광 다이오드 |
DE102016105868A1 (de) * | 2016-03-31 | 2017-10-05 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
CN107437577A (zh) * | 2016-05-25 | 2017-12-05 | 孔东灿 | 一种发光二极管芯片的封胶方法 |
WO2018056788A1 (ko) * | 2016-09-26 | 2018-03-29 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조 방법 |
KR20180090002A (ko) * | 2017-02-02 | 2018-08-10 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
US10497845B2 (en) * | 2017-03-27 | 2019-12-03 | Seoul Semiconductor Co., Ltd. | Display apparatus and method of manufacturing the same |
WO2018206084A1 (en) * | 2017-05-09 | 2018-11-15 | Osram Opto Semiconductors Gmbh | Method for fabricating a light emitting semiconductor chip |
CN107452851A (zh) * | 2017-05-25 | 2017-12-08 | 凃中勇 | 一种发光二极管封装组件及多重色温照明装置 |
CN107146838B (zh) * | 2017-07-05 | 2019-02-26 | 深圳市彩立德照明光电科技有限公司 | 一种led器件的封装工艺及led器件 |
US10559727B2 (en) | 2017-07-25 | 2020-02-11 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Manufacturing method of colorful Micro-LED, display modlue and terminals |
CN107437531A (zh) * | 2017-07-25 | 2017-12-05 | 深圳市华星光电半导体显示技术有限公司 | 制作彩色Micro‑LED的方法、显示模组及终端 |
TWI705585B (zh) * | 2017-09-25 | 2020-09-21 | 致伸科技股份有限公司 | 光源模組 |
KR102696416B1 (ko) * | 2018-12-05 | 2024-08-16 | 엘지디스플레이 주식회사 | 전계발광 표시장치 |
US20220365293A1 (en) * | 2019-11-06 | 2022-11-17 | Mellanox Technologies Ltd. | Integrated accurate molded lens on surface emitting/absorbing electro-optical device |
USD933872S1 (en) | 2020-03-16 | 2021-10-19 | Hgci, Inc. | Light fixture |
US11032976B1 (en) | 2020-03-16 | 2021-06-15 | Hgci, Inc. | Light fixture for indoor grow application and components thereof |
USD933881S1 (en) | 2020-03-16 | 2021-10-19 | Hgci, Inc. | Light fixture having heat sink |
US12055774B2 (en) * | 2021-10-04 | 2024-08-06 | Mellanox Technologies, Ltd. | Self-aligned integrated lens on pillar |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3593055A (en) * | 1969-04-16 | 1971-07-13 | Bell Telephone Labor Inc | Electro-luminescent device |
DE29724543U1 (de) * | 1996-06-26 | 2002-02-28 | OSRAM Opto Semiconductors GmbH & Co. oHG, 93049 Regensburg | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US5966393A (en) * | 1996-12-13 | 1999-10-12 | The Regents Of The University Of California | Hybrid light-emitting sources for efficient and cost effective white lighting and for full-color applications |
US5962971A (en) * | 1997-08-29 | 1999-10-05 | Chen; Hsing | LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights |
US6469322B1 (en) * | 1998-02-06 | 2002-10-22 | General Electric Company | Green emitting phosphor for use in UV light emitting diodes |
US5959316A (en) * | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
WO2000019546A1 (en) * | 1998-09-28 | 2000-04-06 | Koninklijke Philips Electronics N.V. | Lighting system |
US6429583B1 (en) * | 1998-11-30 | 2002-08-06 | General Electric Company | Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors |
US6351069B1 (en) * | 1999-02-18 | 2002-02-26 | Lumileds Lighting, U.S., Llc | Red-deficiency-compensating phosphor LED |
US6680569B2 (en) * | 1999-02-18 | 2004-01-20 | Lumileds Lighting U.S. Llc | Red-deficiency compensating phosphor light emitting device |
TW455908B (en) * | 1999-04-20 | 2001-09-21 | Koninkl Philips Electronics Nv | Lighting system |
US6504301B1 (en) * | 1999-09-03 | 2003-01-07 | Lumileds Lighting, U.S., Llc | Non-incandescent lightbulb package using light emitting diodes |
EP1104799A1 (en) * | 1999-11-30 | 2001-06-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Red emitting luminescent material |
JP3910171B2 (ja) * | 2003-02-18 | 2007-04-25 | シャープ株式会社 | 半導体発光装置、その製造方法および電子撮像装置 |
US7250715B2 (en) * | 2004-02-23 | 2007-07-31 | Philips Lumileds Lighting Company, Llc | Wavelength converted semiconductor light emitting devices |
US7352011B2 (en) * | 2004-11-15 | 2008-04-01 | Philips Lumileds Lighting Company, Llc | Wide emitting lens for LED useful for backlighting |
US7344902B2 (en) * | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
US7858408B2 (en) * | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
JP2007273562A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | 半導体発光装置 |
JP2008115407A (ja) * | 2006-10-31 | 2008-05-22 | Fujimi Inc | 溶射用粉末及び溶射皮膜の形成方法 |
KR100930171B1 (ko) * | 2006-12-05 | 2009-12-07 | 삼성전기주식회사 | 백색 발광장치 및 이를 이용한 백색 광원 모듈 |
-
2008
- 2008-11-05 US US12/265,050 patent/US20100109025A1/en not_active Abandoned
-
2009
- 2009-10-29 RU RU2011122609/28A patent/RU2011122609A/ru not_active Application Discontinuation
- 2009-10-29 JP JP2011533909A patent/JP2012507847A/ja not_active Withdrawn
- 2009-10-29 WO PCT/IB2009/054808 patent/WO2010052621A1/en active Application Filing
- 2009-10-29 BR BRPI0916082A patent/BRPI0916082A2/pt not_active Application Discontinuation
- 2009-10-29 CN CN2009801443019A patent/CN102203965A/zh active Pending
- 2009-10-29 EP EP09747926A patent/EP2342761A1/en not_active Withdrawn
- 2009-10-29 KR KR1020117012895A patent/KR20110084294A/ko not_active Application Discontinuation
- 2009-11-02 TW TW098137140A patent/TW201034262A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20100109025A1 (en) | 2010-05-06 |
RU2011122609A (ru) | 2012-12-20 |
TW201034262A (en) | 2010-09-16 |
WO2010052621A1 (en) | 2010-05-14 |
CN102203965A (zh) | 2011-09-28 |
JP2012507847A (ja) | 2012-03-29 |
EP2342761A1 (en) | 2011-07-13 |
KR20110084294A (ko) | 2011-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BRPI0916082A2 (pt) | método para formação de um diodo emissor de luz convertido com fósforo (pc - led), diodo emissor de luz convertido com fósforo (pc - led), e, estrutura intermediária de diodo emissor de luz (led) | |
BRPI0916184A8 (pt) | método para a formação de um equipamento de iluminação e equipamento de iluminação | |
BRPI0919116A2 (pt) | método | |
BRPI0814359A2 (pt) | Método | |
BRPI0817226A2 (pt) | Método | |
BRPI0817726A2 (pt) | Método | |
BRPI0908192A2 (pt) | Dispositivo funcional, e, método para produzir um dispositivo funcional | |
BRPI0814501A2 (pt) | Método para fabricar uma estrutura de diodo emissor de luz | |
DK2313489T3 (da) | Fremstillingsmetode | |
BRPI0916787A2 (pt) | artigo, e, método para fabricar um artigo | |
BRPI0922490A2 (pt) | Método para produção de beta-santaleno | |
BRPI1008304A2 (pt) | pistão, e, método para construir um pistão | |
BRPI0813858A2 (pt) | Método para produzir peptídeo | |
BRPI0823031A2 (pt) | Conjunto, e , método para fabricar um conjunto | |
BRPI0912903A2 (pt) | processo contínuo para a extração de poliamida - 6 | |
BRPI0812741A2 (pt) | Método para separação de glóbulos | |
BRPI0810416A2 (pt) | Método de hidroformação | |
BRPI0916597A2 (pt) | Método | |
BRPI0923370A2 (pt) | Método para produção de titanossilicato | |
BRPI0918744A2 (pt) | Metodo para produção de açúcar | |
BRPI0915125A2 (pt) | método de seleção ii | |
BRPI0908166A2 (pt) | Processos para obter um composto e para a fabricação de um composto, e, composto | |
ES2451508T8 (es) | Proceso de acervación múltiple simultánea | |
BRPI0811533A2 (pt) | Método para a produção de um vírus | |
FR2933095B1 (fr) | Polyamide modifie |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
B11A | Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing | ||
B11Y | Definitive dismissal acc. article 33 of ipl - extension of time limit for request of examination expired |