BR112016001710A2 - método para fabricação de uma nanoestrutura e artigos nanoestruturados - Google Patents
método para fabricação de uma nanoestrutura e artigos nanoestruturadosInfo
- Publication number
- BR112016001710A2 BR112016001710A2 BR112016001710A BR112016001710A BR112016001710A2 BR 112016001710 A2 BR112016001710 A2 BR 112016001710A2 BR 112016001710 A BR112016001710 A BR 112016001710A BR 112016001710 A BR112016001710 A BR 112016001710A BR 112016001710 A2 BR112016001710 A2 BR 112016001710A2
- Authority
- BR
- Brazil
- Prior art keywords
- plasma
- substrate
- nanostructure
- layer
- compounds
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/60—Details of absorbing elements characterised by the structure or construction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Laminated Bodies (AREA)
- Drying Of Semiconductors (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
resumo método para fabricação de uma nanoestrutura e artigos nanoestruturados trata-se de um método para fabricação de uma nanoestrutura e artigos na-noestruturados através da deposição de uma camada em uma superfície principal de um substrato por deposição química por vapor assistida por plasma a partir de uma mistura gasosa enquanto a superfície é substancial e simultaneamente grava-da com uma espécie reativa. o método inclui fornecer um substrato, misturar uma primeira espécie gasosa capaz de depositar uma camada sobre o substrato quando transformada em um plasma com uma segunda espécie gasosa capaz de gravar o substrato quando transformada em um plasma, formando, portanto, uma mistura gasosa; transformar a mistura gasosa em um plasma e expor uma superfície do substrato ao plasma, sendo que a superfície é gravada e uma camada é depositada sobre ao menos uma porção da superfície gravada formando substancial e simulta-neamente, dessa forma, a nanoestrutura. o substrato pode ser um material (co)polimérico, um material inorgânico, uma liga, uma solução sólida ou uma com-binação dos mesmos. a camada depositada pode incluir o produto da reação da de-posição química por vapor assistida por plasma com uso de um gás reagente que compreende um composto selecionado do grupo que consiste em compostos de organossilício, compostos metálicos de alquila, compostos de isopropóxido metálico, compostos de acetilacetonato metálico, compostos de haleto metálico e combina-ções dos mesmos. nanoestruturas de alta razão de aspecto e opcionalmente com dimensões aleatórias em ao menos uma dimensão e, de preferência, em três di-mensões ortogonais podem ser preparadas.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361858670P | 2013-07-26 | 2013-07-26 | |
US201361867733P | 2013-08-20 | 2013-08-20 | |
US201462018761P | 2014-06-30 | 2014-06-30 | |
PCT/US2014/047782 WO2015013387A1 (en) | 2013-07-26 | 2014-07-23 | Method of making a nanostructure and nanostructured articles |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112016001710A2 true BR112016001710A2 (pt) | 2017-08-01 |
Family
ID=52393807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112016001710A BR112016001710A2 (pt) | 2013-07-26 | 2014-07-23 | método para fabricação de uma nanoestrutura e artigos nanoestruturados |
Country Status (8)
Country | Link |
---|---|
US (1) | US10119190B2 (pt) |
EP (1) | EP3024777B1 (pt) |
JP (1) | JP6505693B2 (pt) |
KR (2) | KR20210151999A (pt) |
CN (1) | CN105431376B (pt) |
BR (1) | BR112016001710A2 (pt) |
SG (2) | SG10201704677QA (pt) |
WO (1) | WO2015013387A1 (pt) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6640106B2 (ja) | 2014-04-03 | 2020-02-05 | スリーエム イノベイティブ プロパティズ カンパニー | 研磨パッド及びシステム、並びにその作製方法及び使用方法 |
CN107429136B (zh) | 2015-02-27 | 2020-07-17 | 3M创新有限公司 | 双面涂布胶带 |
EP3313458A1 (en) * | 2015-06-29 | 2018-05-02 | 3M Innovative Properties Company | Anti-microbial articles and methods of using same |
TWI769988B (zh) | 2015-10-07 | 2022-07-11 | 美商3M新設資產公司 | 拋光墊與系統及其製造與使用方法 |
WO2017083482A1 (en) | 2015-11-13 | 2017-05-18 | 3M Innovative Properties Company | Anti-microbial articles and methods of using same |
US10617784B2 (en) | 2015-11-13 | 2020-04-14 | 3M Innovative Properties Company | Anti-microbial articles and methods of using same |
US20190144726A1 (en) * | 2016-05-13 | 2019-05-16 | 3M Innovative Properties Company | Thermally stable siloxane-based protection film |
CN106542494B (zh) * | 2016-09-26 | 2017-12-26 | 西北工业大学 | 一种用于制备多层不等高微纳结构的方法 |
CN106549074A (zh) * | 2016-12-08 | 2017-03-29 | 上海空间电源研究所 | 一种用于临近空间环境的薄硅太阳电池组件及其制备方法 |
US20200094537A1 (en) * | 2017-05-10 | 2020-03-26 | 3M Innovative Properties Company | Fluoropolymer Articles and Related Methods |
WO2019130198A1 (en) | 2017-12-29 | 2019-07-04 | 3M Innovative Properties Company | Anti-reflective surface structures |
EP3735574A1 (en) | 2018-01-05 | 2020-11-11 | 3M Innovative Properties Company | Stray light absorbing film |
US11661536B2 (en) | 2018-02-28 | 2023-05-30 | 3M Innovative Properties Company | Adhesives comprising polymerized units of secondary hexyl (meth)acrylates |
US12099222B2 (en) | 2018-08-23 | 2024-09-24 | 3M Innovative Properties Company | Photochromic articles |
EP3844224A1 (en) | 2018-08-31 | 2021-07-07 | 3M Innovative Properties Company | Articles including nanostructured surfaces and interpenetrating layers, and methods of making same |
US12103846B2 (en) | 2019-05-08 | 2024-10-01 | 3M Innovative Properties Company | Nanostructured article |
WO2020250300A1 (ja) * | 2019-06-11 | 2020-12-17 | ナルックス株式会社 | 表面に微細凹凸構造を備えたプラスチック素子の製造方法 |
CN110329985B (zh) * | 2019-06-18 | 2022-02-15 | 长沙新材料产业研究院有限公司 | 一种金刚石表面复杂结构及其制备方法 |
WO2021152479A1 (en) * | 2020-01-29 | 2021-08-05 | 3M Innovative Properties Company | Nanostructured article |
WO2022090901A1 (en) | 2020-10-30 | 2022-05-05 | 3M Innovative Properties Company | Ultraviolet c (uv-c) light reflector including fluoropolymer films |
EP4284176A1 (en) | 2021-01-28 | 2023-12-06 | 3M Innovative Properties Company | Antimicrobial compositions and articles and related methods |
CN114171641B (zh) * | 2021-11-30 | 2024-05-31 | 北京燕东微电子科技有限公司 | 氧化钒薄膜的刻蚀方法与半导体器件的制造方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
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US4340276A (en) | 1978-11-01 | 1982-07-20 | Minnesota Mining And Manufacturing Company | Method of producing a microstructured surface and the article produced thereby |
DK152140B (da) | 1979-02-16 | 1988-02-01 | Kuesters Eduard Maschf | Fremgangsmaade og apparat til moenstring af en fremfoert varebane |
GB2064987B (en) | 1979-11-14 | 1983-11-30 | Toray Industries | Process for producing transparent shaped article having enhanced anti-reflective effect |
JPS6294955A (ja) * | 1985-10-21 | 1987-05-01 | Nec Corp | 素子分離方法 |
US5888594A (en) | 1996-11-05 | 1999-03-30 | Minnesota Mining And Manufacturing Company | Process for depositing a carbon-rich coating on a moving substrate |
US6534409B1 (en) | 1996-12-04 | 2003-03-18 | Micron Technology, Inc. | Silicon oxide co-deposition/etching process |
US6593247B1 (en) | 1998-02-11 | 2003-07-15 | Applied Materials, Inc. | Method of depositing low k films using an oxidizing plasma |
US6582823B1 (en) | 1999-04-30 | 2003-06-24 | North Carolina State University | Wear-resistant polymeric articles and methods of making the same |
KR20020046232A (ko) * | 1999-06-03 | 2002-06-20 | 토마스 제이. 모나한 | 침착된 박막 보이드-칼럼 네트워크 물질 |
CA2375138A1 (en) | 1999-06-03 | 2000-12-14 | The Penn State Research Foundation | Deposited thin film void-column network materials |
JP3691689B2 (ja) * | 1999-08-03 | 2005-09-07 | 住友精密工業株式会社 | エッチング表面の親水性化方法 |
US6391788B1 (en) * | 2000-02-25 | 2002-05-21 | Applied Materials, Inc. | Two etchant etch method |
US6919119B2 (en) | 2000-05-30 | 2005-07-19 | The Penn State Research Foundation | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films |
WO2002025714A1 (en) * | 2000-09-20 | 2002-03-28 | Infineon Technologies Sc300 Gmbh & Co. Kg | A process for dry-etching a semiconductor wafer surface |
US7956525B2 (en) * | 2003-05-16 | 2011-06-07 | Nanomix, Inc. | Flexible nanostructure electronic devices |
US6726979B2 (en) | 2002-02-26 | 2004-04-27 | Saint-Gobain Performance Plastics Corporation | Protective glazing laminate |
US7074723B2 (en) * | 2002-08-02 | 2006-07-11 | Applied Materials, Inc. | Method of plasma etching a deeply recessed feature in a substrate using a plasma source gas modulated etchant system |
DE10241708B4 (de) | 2002-09-09 | 2005-09-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Reduzierung der Grenzflächenreflexion von Kunststoffsubstraten sowie derart modifiziertes Substrat und dessen Verwendung |
KR101154215B1 (ko) | 2004-08-18 | 2012-06-18 | 다우 코닝 코포레이션 | SiOC:H 피복된 기판 및 이의 제조방법 |
CN100593015C (zh) * | 2005-12-09 | 2010-03-03 | 中国科学院物理研究所 | 一种表面纳米锥阵列及其制作方法 |
DE102006017716A1 (de) | 2006-04-15 | 2007-10-18 | Forschungszentrum Jülich GmbH | Vorrichtung zur Messung biomedizinischer Daten eines Probanden und Verfahren zur Stimulation des Probanden mit in Echtzeit verarbeiteten Daten |
KR101615787B1 (ko) * | 2008-12-30 | 2016-04-26 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 나노구조화 표면의 제조 방법 |
EP2566681B1 (en) * | 2010-05-03 | 2018-09-26 | 3M Innovative Properties Company | Method of making a nanostructure |
CN102653390A (zh) * | 2012-04-18 | 2012-09-05 | 北京大学 | 使用混合气体刻蚀制备纳米森林结构的方法 |
-
2014
- 2014-07-23 CN CN201480042006.3A patent/CN105431376B/zh active Active
- 2014-07-23 KR KR1020217039500A patent/KR20210151999A/ko not_active Application Discontinuation
- 2014-07-23 SG SG10201704677QA patent/SG10201704677QA/en unknown
- 2014-07-23 BR BR112016001710A patent/BR112016001710A2/pt not_active IP Right Cessation
- 2014-07-23 KR KR1020167004660A patent/KR20160037961A/ko not_active Application Discontinuation
- 2014-07-23 WO PCT/US2014/047782 patent/WO2015013387A1/en active Application Filing
- 2014-07-23 EP EP14829850.8A patent/EP3024777B1/en active Active
- 2014-07-23 JP JP2016529853A patent/JP6505693B2/ja active Active
- 2014-07-23 SG SG11201600606TA patent/SG11201600606TA/en unknown
-
2016
- 2016-11-17 US US15/354,086 patent/US10119190B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20210151999A (ko) | 2021-12-14 |
CN105431376B (zh) | 2018-08-31 |
SG11201600606TA (en) | 2016-02-26 |
JP2016532576A (ja) | 2016-10-20 |
EP3024777B1 (en) | 2024-05-15 |
EP3024777A4 (en) | 2017-01-11 |
SG10201704677QA (en) | 2017-07-28 |
KR20160037961A (ko) | 2016-04-06 |
EP3024777A1 (en) | 2016-06-01 |
US20170067150A1 (en) | 2017-03-09 |
CN105431376A (zh) | 2016-03-23 |
JP6505693B2 (ja) | 2019-04-24 |
WO2015013387A1 (en) | 2015-01-29 |
US10119190B2 (en) | 2018-11-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] | ||
B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2472 DE 22-05-2018 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |