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ATE538474T1 - System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen - Google Patents

System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen

Info

Publication number
ATE538474T1
ATE538474T1 AT09157306T AT09157306T ATE538474T1 AT E538474 T1 ATE538474 T1 AT E538474T1 AT 09157306 T AT09157306 T AT 09157306T AT 09157306 T AT09157306 T AT 09157306T AT E538474 T1 ATE538474 T1 AT E538474T1
Authority
AT
Austria
Prior art keywords
random access
access memory
magnetic
magnetorresistive
memory cells
Prior art date
Application number
AT09157306T
Other languages
English (en)
Inventor
Neal Berger
Virgile Javerliac
Original Assignee
Crocus Technology Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crocus Technology Sa filed Critical Crocus Technology Sa
Application granted granted Critical
Publication of ATE538474T1 publication Critical patent/ATE538474T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
AT09157306T 2008-04-07 2009-04-03 System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen ATE538474T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4303808P 2008-04-07 2008-04-07

Publications (1)

Publication Number Publication Date
ATE538474T1 true ATE538474T1 (de) 2012-01-15

Family

ID=40933614

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09157306T ATE538474T1 (de) 2008-04-07 2009-04-03 System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen

Country Status (4)

Country Link
US (1) US8169815B2 (de)
EP (1) EP2109111B1 (de)
JP (1) JP5319369B2 (de)
AT (1) ATE538474T1 (de)

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TWI449040B (zh) 2006-10-06 2014-08-11 Crocus Technology Sa 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法
ATE538474T1 (de) 2008-04-07 2012-01-15 Crocus Technology Sa System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen
EP2124228B1 (de) 2008-05-20 2014-03-05 Crocus Technology Magnetischer Direktzugriffsspeicher mit einem elliptischen Tunnelübergang
US8031519B2 (en) 2008-06-18 2011-10-04 Crocus Technology S.A. Shared line magnetic random access memory cells
US8228703B2 (en) 2008-11-04 2012-07-24 Crocus Technology Sa Ternary Content Addressable Magnetoresistive random access memory cell
US8289765B2 (en) 2009-02-19 2012-10-16 Crocus Technology Sa Active strap magnetic random access memory cells configured to perform thermally-assisted writing
EP2276034B1 (de) 2009-07-13 2016-04-27 Crocus Technology S.A. Selbstbezogene Magnetdirektzugriffsspeicherzelle
EP2405438B1 (de) * 2010-07-07 2016-04-20 Crocus Technology S.A. Verfahren zum Schreiben in eine MRAM-basierten Speichervorrichtung mit reduziertem Energieverbrauch
EP2405439B1 (de) * 2010-07-07 2013-01-23 Crocus Technology S.A. Magnetische Vorrichtung mit optimierter Wärmeeingrenzung
US8400066B1 (en) 2010-08-01 2013-03-19 Lawrence T. Pileggi Magnetic logic circuits and systems incorporating same
EP2546836A1 (de) * 2011-07-12 2013-01-16 Crocus Technology S.A. Magnetische Direktzugriffsspeicherzelle mit verbesserter Verteilung des Schaltfelds
US8611141B2 (en) * 2011-09-21 2013-12-17 Crocus Technology Inc. Magnetic random access memory devices including heating straps
EP2575136B1 (de) * 2011-09-30 2014-12-24 Crocus Technology S.A. Selbstbezogene Magnetdirektzugriffsspeicherzelle mit ferromagnetischen Schichten
EP2615610B1 (de) * 2012-01-16 2016-11-02 Crocus Technology S.A. MRAM-Zelle und Verfahren zum Beschreiben einer MRAM-Zelle unter Verwendung einer wärmeunterstützten Schreiboperation mit reduziertem Feldstrom
US20140124880A1 (en) 2012-11-06 2014-05-08 International Business Machines Corporation Magnetoresistive random access memory
US8750033B2 (en) 2012-11-06 2014-06-10 International Business Machines Corporation Reading a cross point cell array
EP2741296B1 (de) * 2012-12-07 2019-01-30 Crocus Technology S.A. Selbstbezogene Magnetdirektzugriffsspeicherzelle (MRAM) und Verfahren zum Schreiben in die MRAM-Zelle mit erhöhter Zuverlässigkeit und verringertem Stromverbrauch
US8917531B2 (en) 2013-03-14 2014-12-23 International Business Machines Corporation Cell design for embedded thermally-assisted MRAM
EP2804180A1 (de) * 2013-05-15 2014-11-19 Crocus Technology S.A. Mehrstufiger MRAM für geringen Stromverbrauch und zuverlässiger Schreiboperation
US9330748B2 (en) 2014-05-09 2016-05-03 Tower Semiconductor Ltd. High-speed compare operation using magnetic tunnel junction elements including two different anti-ferromagnetic layers
US9331123B2 (en) * 2014-05-09 2016-05-03 Tower Semiconductor Ltd. Logic unit including magnetic tunnel junction elements having two different anti-ferromagnetic layers
US9947383B1 (en) * 2017-02-23 2018-04-17 International Business Machines Corporation Spin hall write select for magneto-resistive random access memory

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FR2866750B1 (fr) 2004-02-23 2006-04-21 Centre Nat Rech Scient Memoire magnetique a jonction tunnel magnetique et procede pour son ecriture
FR2867300B1 (fr) 2004-03-05 2006-04-28 Commissariat Energie Atomique Memoire vive magnetoresistive a haute densite de courant
US7345911B2 (en) * 2006-02-14 2008-03-18 Magic Technologies, Inc. Multi-state thermally assisted storage
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TWI449040B (zh) 2006-10-06 2014-08-11 Crocus Technology Sa 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法
ATE538474T1 (de) 2008-04-07 2012-01-15 Crocus Technology Sa System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen

Also Published As

Publication number Publication date
EP2109111A1 (de) 2009-10-14
US20090251957A1 (en) 2009-10-08
JP2009302515A (ja) 2009-12-24
JP5319369B2 (ja) 2013-10-16
EP2109111B1 (de) 2011-12-21
US8169815B2 (en) 2012-05-01

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