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ATE553223T1 - Halbleitervorrichtung, herstellungsverfahren dafür und sputtern von zielmaterial zur verwendung für das verfahren - Google Patents

Halbleitervorrichtung, herstellungsverfahren dafür und sputtern von zielmaterial zur verwendung für das verfahren

Info

Publication number
ATE553223T1
ATE553223T1 AT07737744T AT07737744T ATE553223T1 AT E553223 T1 ATE553223 T1 AT E553223T1 AT 07737744 T AT07737744 T AT 07737744T AT 07737744 T AT07737744 T AT 07737744T AT E553223 T1 ATE553223 T1 AT E553223T1
Authority
AT
Austria
Prior art keywords
insulating film
main body
atomic concentration
semiconductor device
wiring main
Prior art date
Application number
AT07737744T
Other languages
English (en)
Inventor
Junichi Koike
Original Assignee
Advanced Interconnect Materials Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Interconnect Materials Llc filed Critical Advanced Interconnect Materials Llc
Application granted granted Critical
Publication of ATE553223T1 publication Critical patent/ATE553223T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/027—Graded interfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Thermal Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
AT07737744T 2006-02-28 2007-02-27 Halbleitervorrichtung, herstellungsverfahren dafür und sputtern von zielmaterial zur verwendung für das verfahren ATE553223T1 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2006053851 2006-02-28
JP2006052436 2006-02-28
JP2006156228 2006-06-05
JP2006237325 2006-09-01
JP2006278461 2006-10-12
JP2006316958 2006-11-24
PCT/JP2007/054134 WO2007100125A1 (ja) 2006-02-28 2007-02-27 半導体装置、その製造方法およびその製造方法に用いるスパッタリング用ターゲット材

Publications (1)

Publication Number Publication Date
ATE553223T1 true ATE553223T1 (de) 2012-04-15

Family

ID=38459215

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07737744T ATE553223T1 (de) 2006-02-28 2007-02-27 Halbleitervorrichtung, herstellungsverfahren dafür und sputtern von zielmaterial zur verwendung für das verfahren

Country Status (5)

Country Link
US (2) US8188599B2 (de)
EP (1) EP1990432B1 (de)
CN (1) CN101395290B (de)
AT (1) ATE553223T1 (de)
WO (1) WO2007100125A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8188599B2 (en) * 2006-02-28 2012-05-29 Advanced Interconnect Materials, Llc Semiconductor device, its manufacturing method, and sputtering target material for use in the method
WO2008041535A1 (en) * 2006-10-03 2008-04-10 Nippon Mining & Metals Co., Ltd. Cu-Mn ALLOY SPUTTERING TARGET AND SEMICONDUCTOR WIRING
JP2009141058A (ja) * 2007-12-05 2009-06-25 Fujitsu Microelectronics Ltd 半導体装置およびその製造方法
JP4423379B2 (ja) 2008-03-25 2010-03-03 合同会社先端配線材料研究所 銅配線、半導体装置および銅配線の形成方法
US8258626B2 (en) 2008-09-16 2012-09-04 Advanced Interconnect Materials, Llc Copper interconnection, method for forming copper interconnection structure, and semiconductor device
TW201023328A (en) * 2008-12-04 2010-06-16 Univ Ibaraki Semiconductor integrated circuit device and method for producing the same
JP4415100B1 (ja) 2008-12-19 2010-02-17 国立大学法人東北大学 銅配線、半導体装置および銅配線形成方法
JP4441658B1 (ja) * 2008-12-19 2010-03-31 国立大学法人東北大学 銅配線形成方法、銅配線および半導体装置
JP5585909B2 (ja) * 2010-02-16 2014-09-10 合同会社先端配線材料研究所 コンタクトプラグ、配線、半導体装置およびコンタクトプラグ形成方法
JP2012027159A (ja) * 2010-07-21 2012-02-09 Kobe Steel Ltd 表示装置
US8852674B2 (en) * 2010-11-12 2014-10-07 Applied Materials, Inc. Method for segregating the alloying elements and reducing the residue resistivity of copper alloy layers
US8461683B2 (en) * 2011-04-01 2013-06-11 Intel Corporation Self-forming, self-aligned barriers for back-end interconnects and methods of making same
CN102881633B (zh) * 2011-07-15 2015-04-01 中芯国际集成电路制造(上海)有限公司 铜互连结构的制作方法
KR101934977B1 (ko) 2011-08-02 2019-03-19 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101323151B1 (ko) * 2011-09-09 2013-10-30 가부시키가이샤 에스에이치 카퍼프로덕츠 구리-망간합금 스퍼터링 타겟재, 그것을 사용한 박막 트랜지스터 배선 및 박막 트랜지스터
JP5888501B2 (ja) * 2012-02-16 2016-03-22 三菱マテリアル株式会社 薄膜配線形成方法
US9190321B2 (en) 2013-04-08 2015-11-17 International Business Machines Corporation Self-forming embedded diffusion barriers
TW201545895A (zh) 2014-01-08 2015-12-16 Applied Materials Inc 鈷錳氣相沉積
US9412658B2 (en) * 2014-09-19 2016-08-09 International Business Machines Corporation Constrained nanosecond laser anneal of metal interconnect structures
US9564356B2 (en) * 2015-04-16 2017-02-07 International Business Machines Corporation Self-forming metal barriers
US10760156B2 (en) 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
JP7130447B2 (ja) * 2018-06-07 2022-09-05 株式会社神戸製鋼所 光情報記録媒体用記録層、光情報記録媒体、及びスパッタリングターゲット
FR3096830B1 (fr) 2019-05-27 2021-06-18 St Microelectronics Crolles 2 Sas Elément d'interconnexion et son procédé de fabrication
US11646268B2 (en) 2020-11-13 2023-05-09 Nanya Technology Corporation Semiconductor device structure with conductive plugs of different aspect ratios and manganese-containing liner having different thicknesses
CN115786764B (zh) * 2022-11-22 2023-12-22 广州番禺职业技术学院 一种铜镜材料及其制备方法

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0547760A (ja) 1991-08-12 1993-02-26 Hitachi Ltd 半導体集積回路装置、その製造方法およびその製造に用いるスパツタターゲツト
JPH06140398A (ja) * 1992-10-27 1994-05-20 Kawasaki Steel Corp 集積回路装置
JPH06310509A (ja) 1993-04-22 1994-11-04 Kawasaki Steel Corp 半導体集積回路の配線構造
US20030052000A1 (en) * 1997-07-11 2003-03-20 Vladimir Segal Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method
US6599829B2 (en) * 1998-11-25 2003-07-29 Texas Instruments Incorporated Method for photoresist strip, sidewall polymer removal and passivation for aluminum metallization
JP2001044156A (ja) * 1999-07-26 2001-02-16 Nec Corp 半導体装置の製造方法及び化学研磨装置
US6107188A (en) * 1999-08-16 2000-08-22 Taiwan Semiconductor Manufacturing Company Passivation method for copper process
WO2001015219A2 (de) * 1999-08-25 2001-03-01 Infineon Technologies Ag Verfahren zur herstellung einer integrierten schaltung mit mindestens einer metallisierungsebene
US6265319B1 (en) * 1999-09-01 2001-07-24 Taiwan Semiconductor Manufacturing Company Dual damascene method employing spin-on polymer (SOP) etch stop layer
US6734110B1 (en) * 1999-10-14 2004-05-11 Taiwan Semiconductor Manufacturing Company Damascene method employing composite etch stop layer
EP1247292B1 (de) * 1999-12-15 2009-02-04 Genitech Co., Ltd. Methode zur herstellung von kupfer-zwischenverbindungen und dünnen filmen mittels cvd und einem katalysator
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US6541919B1 (en) * 2000-02-14 2003-04-01 Sarnoff Corporation Electrical interconnection of light-emitting fibers, and method therefor
US7427529B2 (en) * 2000-06-06 2008-09-23 Simon Fraser University Deposition of permanent polymer structures for OLED fabrication
JP4095763B2 (ja) * 2000-09-06 2008-06-04 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US6508953B1 (en) * 2000-10-19 2003-01-21 Ferro Corporation Slurry for chemical-mechanical polishing copper damascene structures
US7345342B2 (en) * 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6451685B1 (en) * 2001-02-05 2002-09-17 Micron Technology, Inc. Method for multilevel copper interconnects for ultra large scale integration
JP3825984B2 (ja) 2001-03-26 2006-09-27 株式会社 大阪アサヒメタル工場 高純度マンガンの製造方法
US6944032B1 (en) * 2001-04-12 2005-09-13 Rockwell Collins Interconnect for flat panel displays
US6881664B2 (en) * 2001-08-28 2005-04-19 Lsi Logic Corporation Process for planarizing upper surface of damascene wiring structure for integrated circuit structures
US6555477B1 (en) * 2002-05-22 2003-04-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing Cu CMP corrosion
US6734079B2 (en) * 2002-06-13 2004-05-11 Taiwan Semiconductor Manufacturing Co., Ltd Microelectronic fabrication having sidewall passivated microelectronic capacitor structure fabricated therein
US6638853B1 (en) * 2002-07-03 2003-10-28 Taiwan Semiconductor Manufacturing Co. Ltd. Method for avoiding photoresist resist residue on semioconductor feature sidewalls
US6876082B2 (en) * 2002-08-08 2005-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Refractory metal nitride barrier layer with gradient nitrogen concentration
JP4794802B2 (ja) * 2002-11-21 2011-10-19 Ｊｘ日鉱日石金属株式会社 銅合金スパッタリングターゲット及び半導体素子配線
US7402514B2 (en) * 2003-01-24 2008-07-22 Texas Instruments Incorporated Line-to-line reliability enhancement using a dielectric liner for a low dielectric constant interlevel and intralevel (or intermetal and intrametal) dielectric layer
US6919276B2 (en) * 2003-04-24 2005-07-19 Taiwan Semiconductor Manufacturing Co., Ltd Method to reduce dishing and erosion in a CMP process
US6972253B2 (en) * 2003-09-09 2005-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming dielectric barrier layer in damascene structure
JP2005209800A (ja) * 2004-01-21 2005-08-04 Fujitsu Ltd 半導体装置の製造方法
JP4478038B2 (ja) * 2004-02-27 2010-06-09 株式会社半導体理工学研究センター 半導体装置及びその製造方法
US20060035457A1 (en) * 2004-08-10 2006-02-16 Carter Richard J Interconnection capacitance reduction
US7081406B2 (en) * 2004-08-10 2006-07-25 Lsi Logic Corporation Interconnect dielectric tuning
JP4065959B2 (ja) * 2004-08-31 2008-03-26 国立大学法人東北大学 液晶表示装置、スパッタリングターゲット材および銅合金
JP5068925B2 (ja) 2004-09-03 2012-11-07 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット
US7741714B2 (en) * 2004-11-02 2010-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad structure with stress-buffering layer capping interconnection metal layer
WO2006058034A2 (en) * 2004-11-22 2006-06-01 Intermolecular, Inc. Molecular self-assembly in substrate processing
JP4840756B2 (ja) * 2005-01-14 2011-12-21 セイコーインスツル株式会社 電鋳型とその製造方法及び電鋳部品の製造方法
US7285853B2 (en) * 2005-02-17 2007-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multilayer anti-reflective coating for semiconductor lithography and the method for forming the same
US7323784B2 (en) * 2005-03-17 2008-01-29 Taiwan Semiconductor Manufacturing Co., Ltd. Top via pattern for bond pad structure
US7902639B2 (en) * 2005-05-13 2011-03-08 Siluria Technologies, Inc. Printable electric circuits, electronic components and method of forming the same
JP4851740B2 (ja) * 2005-06-30 2012-01-11 株式会社東芝 半導体装置およびその製造方法
JP2007012996A (ja) * 2005-07-01 2007-01-18 Toshiba Corp 半導体装置
JP4756458B2 (ja) * 2005-08-19 2011-08-24 三菱マテリアル株式会社 パーティクル発生の少ないＭｎ含有銅合金スパッタリングターゲット
JP4272191B2 (ja) * 2005-08-30 2009-06-03 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4523535B2 (ja) * 2005-08-30 2010-08-11 富士通株式会社 半導体装置の製造方法
US7276751B2 (en) * 2005-09-09 2007-10-02 International Business Machines Corporation Trench metal-insulator-metal (MIM) capacitors integrated with middle-of-line metal contacts, and method of fabricating same
JP4282646B2 (ja) * 2005-09-09 2009-06-24 株式会社東芝 半導体装置の製造方法
US7480990B2 (en) * 2006-01-06 2009-01-27 International Business Machines Corporation Method of making conductor contacts having enhanced reliability
US8188599B2 (en) * 2006-02-28 2012-05-29 Advanced Interconnect Materials, Llc Semiconductor device, its manufacturing method, and sputtering target material for use in the method
US7642552B2 (en) * 2007-01-12 2010-01-05 Tohoku University Liquid crystal display device and manufacturing method therefor

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CN101395290B (zh) 2010-11-10
US20090212432A1 (en) 2009-08-27
EP1990432B1 (de) 2012-04-11
CN101395290A (zh) 2009-03-25
EP1990432A4 (de) 2010-12-15
EP1990432A1 (de) 2008-11-12
US20090095620A1 (en) 2009-04-16
WO2007100125A1 (ja) 2007-09-07

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