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Panda et al., 2022 - Google Patents

Drain dielectric pocket engineering: its impact on the electrical performance of a hetero-structure tunnel FET

Panda et al., 2022

Document ID
3528712441160326932
Author
Panda S
Dash S
Publication year
Publication venue
Silicon

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Snippet

In this paper, a simulated Si0. 6Ge0. 4/Si hetero-structure double gate tunneling FET with drain dielectric pocket (DDP-SiGe-TFET) is reported for the first time. The high-k (HfO2) dielectric pocket is positioned in the vicinity of the HfO2/drain interface for improving the …
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