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Shaker et al., 2017 - Google Patents

Influence of drain doping engineering on the ambipolar conduction and high-frequency performance of TFETs

Shaker et al., 2017

Document ID
5396624807720294287
Author
Shaker A
El Sabbagh M
El-Banna M
Publication year
Publication venue
ieee transactions on electron devices

External Links

Snippet

In this paper, the effect of a proposed drain doping engineering on the ambipolar conduction and high-frequency performance of tunneling FETs (TFETs) is investigated using 2-D TCAD simulations. The proposed TFET structure is based on using a high-doped region above a …
Continue reading at ieeexplore.ieee.org (other versions)

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