Vial et al., 1992 - Google Patents
Mechanisms of visible-light emission from electro-oxidized porous siliconVial et al., 1992
- Document ID
- 3360120318641114513
- Author
- Vial J
- Bsiesy A
- Gaspard F
- Herino R
- Ligeon M
- Muller F
- Romestain R
- Macfarlane R
- Publication year
- Publication venue
- Physical Review B
External Links
Snippet
High-porosity porous silicon, after electrochemical oxidation, is a stable and highly reproducible luminescent material with a luminescence quantum efficiency as high as 3% at room temperature. Luminescence decay rates as long as several hundreds of microseconds …
- 229910021426 porous silicon 0 title abstract description 22
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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