Nothing Special   »   [go: up one dir, main page]

Bomchil et al., 1993 - Google Patents

Porous silicon: material properties, visible photo-and electroluminescence

Bomchil et al., 1993

View PDF
Document ID
8998035752201241009
Author
Bomchil G
Halimaoui A
Sagnes I
Badoz P
Berbezier I
Perret P
Lambert B
Vincent G
Garchery L
Regolini J
Publication year
Publication venue
Applied surface science

External Links

Snippet

Following the recent discovery of visible photo-and electroluminescence of high-porosity porous silicon layers this paper presents a review of the most relevant results and models proposed to explain the phenomena. Porous silicon fabrication techniques are presented …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
    • H01L33/343—Materials of the light emitting region containing only elements of group IV of the periodic system characterised by the doping materials

Similar Documents

Publication Publication Date Title
Bomchil et al. Porous silicon: material properties, visible photo-and electroluminescence
Bsiesy et al. Photoluminescence of high porosity and of electrochemically oxidized porous silicon layers
Collins et al. Porous silicon: from luminescence to LEDs
Searson et al. The formation, morphology, and optical properties of porous silicon structures
Namavar et al. Visible electroluminescence from porous silicon np heterojunction diodes
Shcheglov et al. Electroluminescence and photoluminescence of Ge‐implanted Si/SiO2/Si structures
Jung et al. Developments in luminescent porous Si
US5501787A (en) Immersion scanning system for fabricating porous silicon films
Fauchet Progress toward nanoscale silicon light emitters
Halimaoui Porous silicon: material processing, properties and applications
Chang et al. Light emitting mechanism of porous silicon
Wehrspohn et al. Conditions of elaboration of luminescent porous silicon from hydrogenated amorphous silicon
Kalkhoran et al. NP heterojunction porous silicon light-emitting diode
Lopez et al. Room-temperature electroluminescence from erbium-doped porous silicon
Bassous et al. Characterization of microporous silicon fabricated by immersion scanning
Wu et al. Room temperature visible electroluminescence in silicon nanostructures
Ono et al. Effects of anodization temperature on photoluminescence from porous silicon
Peng et al. Luminescence properties of porous silicon
Badoz et al. Characterization of porous silicon: structural, optical and electrical properties
Garuthara et al. Photoluminescence of CdSe: The effect of photoetching
Chang et al. Photoluminescence and Raman studies of porous silicon under various temperatures and light illuminations
Fauchet et al. Optical characterization of light-emitting porous silicon
Fauchet Porous silicon: photoluminescence and electroluminescent devices
Fauchet et al. Prospects for light-emitting diodes made of porous silicon from the blue to beyond 1.5 um
Gong et al. A novel electrochemical approach for fabrication of photoluminescent erbium-doped porous silicon.