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Lundberg et al., 1996 - Google Patents

Chemical Vapor Deposition of Tungsten Schottky Diodes to 6H‐SiC

Lundberg et al., 1996

Document ID
2633759105884724558
Author
Lundberg N
Ötling M
Tägtström P
Jansson U
Publication year
Publication venue
Journal of the electrochemical society

External Links

Snippet

Thermally stable tungsten Schottky contacts to low doped 6H-silicon carbide (SiC) were fabricated via chemical vapor deposition at 670 K followed by a reactive ion etch to pattern the contacts. Physical characterization by x-ray dif-fraction, x-ray photoelectron …
Continue reading at iopscience.iop.org (other versions)

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