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Tedesco et al., 2009 - Google Patents

Conducting atomic force microscopy studies of nanoscale cobalt silicide Schottky barriers on Si (111) and Si (100)

Tedesco et al., 2009

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Document ID
3780439888113130273
Author
Tedesco J
Rowe J
Nemanich R
Publication year
Publication venue
Journal of applied physics

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Snippet

Cobalt silicide (CoSi 2) islands have been formed by the deposition of thin films (∼ 0.1–0.3 nm) of cobalt on clean Si (111) and Si (100) substrates in ultrahigh vacuum (UHV) followed by annealing to∼ 880 C⁠. Conducting atomic force microscopy has been performed on …
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