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Cherik et al., 2021 - Google Patents

Switching performance enhancement in nanotube double-gate tunneling field-effect transistor with germanium source regions

Cherik et al., 2021

Document ID
18227008194949071946
Author
Cherik I
Mohammadi S
Orouji A
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

In this article, we introduce a double-gate nanotube tunneling field-effect transistor with high scalability based on the Si/Ge heterostructure. Our device includes two Ge source regions which are covered by the gate metal to facilitate line tunneling in these regions. The …
Continue reading at ieeexplore.ieee.org (other versions)

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