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El-Shaer et al., 2005 - Google Patents

High-quality ZnO layers grown by MBE on sapphire

El-Shaer et al., 2005

Document ID
17893554420159113010
Author
El-Shaer A
Mofor A
Bakin A
Kreye M
Waag A
Publication year
Publication venue
Superlattices and Microstructures

External Links

Snippet

The development of Molecular Beam Epitaxy (MBE) of ZnO epilayers employing hydrogen peroxide (H2O2) as an oxidant is presented. ZnO layers were grown on (0001) Al2O3 in a modified Varian Gen II MBE system, with H2O2 as an oxygen precursor. Layers with …
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    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed material
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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