Nothing Special   »   [go: up one dir, main page]

Alam et al., 2004 - Google Patents

Elimination of Au-embrittlement in solder joints on Au/Ni metallization

Alam et al., 2004

View PDF
Document ID
17120572561107804980
Author
Alam M
Chan Y
Tu K
Publication year
Publication venue
Journal of materials Research

External Links

Snippet

Systematic experimental work was carried out to understand the mechanism of Au diffusion to the solder interface, and a novel method was proposed to eliminate Au embrittlement by circumventing the continuous layer of (Au, Ni) Sn 4 at the solder interface. Contrary to the …
Continue reading at scholar.archive.org (PDF) (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected

Similar Documents

Publication Publication Date Title
Alam et al. Elimination of Au-embrittlement in solder joints on Au/Ni metallization
Frear et al. Pb-free solders for flip-chip interconnects
Alam et al. Effect of reaction time and P content on mechanical strength of the interface formed between eutectic Sn–Ag solder and Au/electroless Ni (P)/Cu bond pad
Minor et al. Inhibiting growth of the Au 0.5 Ni 0.5 Sn 4 intermetallic layer in Pb-Sn solder joints reflowed on Au/Ni metallization
Jee et al. Effect of Zn on the intermetallics formation and reliability of Sn-3.5 Ag solder on a Cu pad
Subramanian et al. Issues related to the implementation of Pb-free electronic solders in consumer electronics
Alajoki et al. Drop test reliability of wafer level chip scale packages
Kim et al. Effect of Cu content on the mechanical reliability of Ni/Sn–3.5 Ag system
JP4831502B2 (en) Connection terminal balls and connection terminals with excellent drop impact resistance and electronic components
Sohn et al. Correlation between chemical reaction and brittle fracture found in electroless Ni (P)/immersion gold–solder interconnection
JP2003230980A (en) Leadless solder alloy, solder ball and electronic member having solder bump
Islam et al. Interfacial reactions of Sn–Cu solder with Ni/Au surface finish on Cu pad during reflow and aging in ball grid array packages
Lee et al. Low-cycle fatigue characteristics of Sn-based solder joints
Li et al. Microstructure and shear strength evolution of Sn-Ag-Cu solder bumps during aging at different temperatures
JP2004034099A (en) Solder and packaged product using the same
Alam et al. Reliability of BGA solder joints on the Au/Ni/Cu bond pad-effect of thicknesses of Au and Ni layer
JP2011096803A (en) Semiconductor device, and method of manufacturing the same
WO2006023914A2 (en) Thermal fatigue resistant tin-lead-silver solder
Sohn et al. Effect of intermetallics spalling on the mechanical behavior of electroless Ni (P)/Pb-free solder interconnection
Bandayagari et al. Influence of Nickel and Bismuth Addition on the Mechanical Shear Strength of SAC+ Ni, Bi Solders under Isothermal Aging and Multiple Reflows
Azlina et al. Effect of Solder Volume on Interfacial Reaction between SAC405 Solders and EN (B) EPIG Surface Finish
Khatibi et al. Influence of miniaturization on mechanical reliability of lead-free solder interconnects
Jaafar et al. Thermal aging and ball shear characterization of SAC-X solders for wafer level packaging
Huang et al. A study on copper pillar interconnect in flip-chip-on-module packaging
Sohn et al. Study of spalling behavior of intermetallic compounds during the reaction between electroless Ni-P metallization and lead-free solders