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Wu et al., 2022 - Google Patents

Design and characterization of n/p-well CMOS SPAD with low dark count rate and high photon detection efficiency

Wu et al., 2022

Document ID
17057020613574473544
Author
Wu J
Liu C
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

We have proposed a structure design of single-photon avalanche diode fabricated in the Taiwan Semiconductor Manufacturing Company Ltd.(TSMC) 0.18-high-voltage (HV) CMOS technology, which improves the limited operating excess voltage for an n-on-p design …
Continue reading at ieeexplore.ieee.org (other versions)

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