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Jiang et al., 2021 - Google Patents

Improved noise performance of CMOS poly gate single-photon avalanche diodes

Jiang et al., 2021

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Document ID
16062712358832211762
Author
Jiang W
Scott R
Deen M
Publication year
Publication venue
IEEE Photonics Journal

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Snippet

The noise performance of three types of n+/p-well single-photon avalanche diodes (SPADs) fabricated in a standard 180 nm CMOS technology is studied. The SPADs had different poly gate configurations: no poly gate (SPAD_NG), a dummy floating poly gate (SPAD_DG), and …
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