Nothing Special   »   [go: up one dir, main page]

Padovan et al., 2014 - Google Patents

Design of low-noise $ K $-band SiGe bipolar VCOs: Theory and implementation

Padovan et al., 2014

Document ID
16821390994810096351
Author
Padovan F
Tiebout M
Mertens K
Bevilacqua A
Neviani A
Publication year
Publication venue
IEEE Transactions on Circuits and Systems I: Regular Papers

External Links

Snippet

A study of K-band SiGe bipolar VCOs is reported in this paper. The design challenges related to the operation in the K-band and the use of a pure bipolar technology are discussed with particular emphasis to achieving low phase noise while using varactor …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezo-electric resonator
    • H03B5/36Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezo-electric resonator active element in amplifier being semiconductor device
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006Functional aspects of oscillators
    • H03B2200/0062Bias and operating point
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • H03F3/2176Class E amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B1/00Details
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements

Similar Documents

Publication Publication Date Title
Padovan et al. Design of low-noise $ K $-band SiGe bipolar VCOs: Theory and implementation
Wang et al. W-band silicon-based frequency synthesizers using injection-locked and harmonic triplers
Voinigescu et al. A study of SiGe HBT signal sources in the 220–330-GHz range
Monaco et al. Injection-Locked CMOS Frequency Doublers for $\mu $-Wave and mm-Wave Applications
US7961058B2 (en) Frequency divider using an injection-locking-range enhancement technique
Chen et al. Low-voltage $ K $-band divide-by-3 injection-locked frequency divider with floating-source differential injector
Boon et al. RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor
Mahalingam et al. A 30-GHz power-efficient PLL frequency synthesizer for 60-GHz applications
Liu et al. Design of Ultra-Low Phase Noise and High Power Integrated Oscillator in $0.25~\mu {\rm m} $ GaN-on-SiC HEMT Technology
Hsieh et al. A low-phase-noise K-band CMOS VCO
Sapone et al. A 0.13-$\mu {\hbox {m}} $ SiGe BiCMOS Colpitts-Based VCO for $ W $-Band Radar Transmitters
Nguyen et al. Ultralow-power Ku-band dual-feedback Armstrong VCO with a wide tuning range
Chen et al. Wideband varactorless $ LC $ VCO using a tunable negative-inductance cell
Chen et al. W-band frequency synthesis using a Ka-band PLL and two different frequency triplers
US6469586B1 (en) Low voltage voltage-controlled oscillator topology
Dal Toso et al. A 0.06 mm $^{2} $11 mW local oscillator for the GSM standard in 65 nm CMOS
Pirbazari et al. High gain 130-GHz frequency doubler with colpitts output buffer delivering P out up to 8 dBm with 6% PAE in 55-nm SiGe BiCMOS
Pirbazari et al. E-band frequency sextupler with> 35 dB harmonics rejection over 20 GHz bandwidth in 55 nm BiCMOS
Hou et al. A 7.9 GHz low-power PMOS Colpitts VCO using the gate inductive feedback
Jang et al. A feedback GaN HEMT oscillator
Shin et al. A low phase noise fully integrated CMOS LC VCO using a large gate length pMOS current source and bias filtering technique for 5-GHz WLAN
Nikpaik et al. A dual-tank LC VCO topology approaching towards the maximum thermodynamically-achievable oscillator FoM
Padovan et al. A SiGe bipolar VCO for backhaul E-band communication systems
Chen et al. Design of $ X $-band and $ Ka $-band Colpitts oscillators using a parasitic cancellation technique
Padovan et al. A K-band SiGe bipolar VCO with transformer-coupled varactor for backhaul links