Feenstra et al., 1985 - Google Patents
Surface morphology of oxidized and ion‐etched silicon by scanning tunneling microscopyFeenstra et al., 1985
- Document ID
- 16745449020613599623
- Author
- Feenstra R
- Oehrlein G
- Publication year
- Publication venue
- Applied physics letters
External Links
Snippet
The surface morphology of silicon (100) wafers has been measured by scanning tunneling microscopy. Samples which were bombarded with low‐energy argon ions are found to have an average root‐mean‐square roughness of 4.0 Å, and the surfaces are covered with …
- 229910052710 silicon 0 title abstract description 9
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular type of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
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