Nothing Special   »   [go: up one dir, main page]

Xi et al., 2022 - Google Patents

Ferroelectric Schottky barrier MOSFET as analog synapses for neuromorphic computing

Xi et al., 2022

Document ID
14584220418057202392
Author
Xi F
Grenmy A
Zhang J
Han Y
Bae J
Grützmacher D
Zhao Q
Publication year
Publication venue
ESSCIRC 2022-IEEE 48th European Solid State Circuits Conference (ESSCIRC)

External Links

Snippet

In this paper, artificial synapses based on ferroelectric Schottky barrier MOSFETs (FE- SBFETs) are presented. The FE-SBFETs are fabricated with Si doped Hf02 ferroelectric layers scaling down to a gate length of 40 nm and using single crystalline NiSi 2 contacts on …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body

Similar Documents

Publication Publication Date Title
Lederer et al. Ferroelectric field effect transistors as a synapse for neuromorphic application
Ni et al. SoC logic compatible multi-bit FeMFET weight cell for neuromorphic applications
Mikolajick et al. From ferroelectric material optimization to neuromorphic devices
Halter et al. Back-end, CMOS-compatible ferroelectric field-effect transistor for synaptic weights
Majumdar Back‐end CMOS compatible and flexible ferroelectric memories for neuromorphic computing and adaptive sensing
JP2019179499A (en) Semiconductor device and product-sum computation device
Saitoh et al. HfO 2-based FeFET and FTJ for ferroelectric-memory centric 3D LSI towards low-power and high-density storage and AI applications
Mohta et al. An artificial synaptic transistor using an α-In 2 Se 3 van der Waals ferroelectric channel for pattern recognition
Xiang et al. Enhancing Memory Window Efficiency of Ferroelectric Transistor for Neuromorphic Computing via Two‐Dimensional Materials Integration
Peng et al. Nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor featuring low operating voltages and improved synaptic behavior
Liu et al. Analog synapses based on nonvolatile FETs with amorphous ZrO 2 dielectric for spiking neural network applications
Peng et al. Non-volatile field-effect transistors enabled by oxygen vacancy-related dipoles for memory and synapse applications
Raffel et al. Interfacial layer engineering to enhance noise immunity of fefets for imc applications
Kang et al. Hardware-based spiking neural network using a TFT-type AND flash memory array architecture based on direct feedback alignment
Zhai et al. Reconfigurable 2D-ferroelectric platform for neuromorphic computing
Xi et al. Ferroelectric Schottky barrier MOSFET as analog synapses for neuromorphic computing
Lu et al. Optimal Weight Models for Ferroelectric Synapses Toward Neuromorphic Computing
Xi et al. Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes
Majumdar et al. Back‐End and Flexible Substrate Compatible Analog Ferroelectric Field‐Effect Transistors for Accurate Online Training in Deep Neural Network Accelerators
Xi et al. Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications
Farronato et al. Low-current, highly linear synaptic memory device based on MoS 2 transistors for online training and inference
Peng et al. Ferroelectric-like non-volatile FET with amorphous gate insulator for supervised learning applications
Jamaa et al. Fabrication of memristors with poly-crystalline silicon nanowires
Xi et al. 4-terminal ferroelectric Schottky barrier field effect transistors as artificial synapses
Lu et al. Fabrication and characterization of ferroelectric HfZrO-based synaptic transistors with multi-state plasticity