Nothing Special   »   [go: up one dir, main page]

Xi et al., 2022 - Google Patents

Four-terminal ferroelectric Schottky barrier field effect transistors as artificial synapses for neuromorphic applications

Xi et al., 2022

View PDF
Document ID
4240824022860582446
Author
Xi F
Han Y
Grenmyr A
Grützmacher D
Zhao Q
Publication year
Publication venue
IEEE Journal of the Electron Devices Society

External Links

Snippet

In this paper, artificial synapses based on four terminal ferroelectric Schottky barrier field effect transistors (FE-SBFETs) are experimentally demonstrated. The ferroelectric polarization switching dynamics gradually modulate the Schottky barriers, thus programming …
Continue reading at ieeexplore.ieee.org (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/14—Selection of switching materials

Similar Documents

Publication Publication Date Title
Halter et al. Back-end, CMOS-compatible ferroelectric field-effect transistor for synaptic weights
Mikolajick et al. From ferroelectric material optimization to neuromorphic devices
Mulaosmanovic et al. Ferroelectric field-effect transistors based on HfO2: a review
Kim et al. Ferroelectric analog synaptic transistors
Jerry et al. A ferroelectric field effect transistor based synaptic weight cell
Wu et al. A monolithic 3-D integration of RRAM array and oxide semiconductor FET for in-memory computing in 3-D neural network
US10963776B2 (en) Artificial neuron based on ferroelectric circuit element
Oh et al. HfZrO x-based ferroelectric synapse device with 32 levels of conductance states for neuromorphic applications
Lederer et al. Ferroelectric field effect transistors as a synapse for neuromorphic application
Luo et al. Artificial optoelectronic synapses based on ferroelectric field-effect enabled 2D transition metal dichalcogenide memristive transistors
Jia et al. Tactile tribotronic reconfigurable pn junctions for artificial synapses
Jiao et al. Ferroelectric field effect transistors for electronics and optoelectronics
Majumdar Back‐end CMOS compatible and flexible ferroelectric memories for neuromorphic computing and adaptive sensing
Yu et al. An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation
US10892330B2 (en) FET based synapse network
Chou et al. Junctionless poly-GeSn ferroelectric thin-film transistors with improved reliability by interface engineering for neuromorphic computing
Kuo et al. CMOS-compatible fabrication of low-power ferroelectric tunnel junction for neural network applications
JP2019179499A (en) Semiconductor device and product-sum computation device
Liu et al. Analog synapses based on nonvolatile FETs with amorphous ZrO 2 dielectric for spiking neural network applications
Yang et al. Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials
JP2023534389A (en) Neurons and synapses with ferroelectrically modulated metal-semiconductor Schottky diodes and methods
Xi et al. Four-terminal ferroelectric Schottky barrier field effect transistors as artificial synapses for neuromorphic applications
Kim et al. PZT ferroelectric synapse TFT with multi-level of conductance state for neuromorphic applications
Xi et al. Heterosynaptic plasticity and neuromorphic Boolean logic enabled by ferroelectric polarization modulated Schottky diodes
Kwon et al. Low-power adaptive integrate-and-fire neuron circuit using positive feedback FET Co-Integrated with CMOS