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Altinsoy et al. - Google Patents

Intrinsic Amorphous Silicon Bilayers for Surface Passivation in Silicon Heterojunction Solar Cells

Altinsoy et al.

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Document ID
12622925864166572415
Author
Altinsoy B
Depauw V
Rajagopal D
Radhakrishnan H
Nasser H
Turan R
Publication venue
Available at SSRN 5030522

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Abstract The performance of Silicon Heterojunction Solar Cells is tied to specific properties of hydrogenated amorphous silicon (a-Si: H) thin layers particularly as passivating contacts. This study provides insights into the structure and thickness optimization of intrinsic …
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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