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Karunagaran et al., 2007 - Google Patents

Effect of rapid thermal annealing on the properties of PECVD SiNx thin films

Karunagaran et al., 2007

Document ID
12456339521289772361
Author
Karunagaran B
Chung S
Velumani S
Suh E
Publication year
Publication venue
Materials Chemistry and Physics

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Snippet

Silicon nitride (SiNx: H) thin films were grown on silicon by the plasma-enhanced chemical vapor deposition (PECVD) method at low temperature in order to study their optical, electrical properties and correlate these properties to the chemical composition of the layers …
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    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material

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