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Li et al., 2018 - Google Patents

Multi-stacking hybrid P/N/P nanosheet layers junctionless field-effect transistors

Li et al., 2018

Document ID
11828902525398954408
Author
Li H
Lin Y
Wu Y
Lin Y
Yu J
Publication year
Publication venue
2018 7th International Symposium on Next Generation Electronics (ISNE)

External Links

Snippet

This work demonstrates the hybrid poly-Si nanosheet channels junctionless (JL) field-effect transistors (FET). The hybrid P/N/P double nanosheet channels JL-FFT exhibits the excellent electrical performances in terms of a high I on/I off current ratio (> 10 7), subthreshold swing …
Continue reading at ieeexplore.ieee.org (other versions)

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