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Endo et al., 2007 - Google Patents

Four-terminal FinFETs fabricated using an etch-back gate separation

Endo et al., 2007

Document ID
6185309153894911014
Author
Endo K
Ishikawa Y
Liu Y
Ishii K
Matsukawa T
Masahara M
Sugimata E
Tsukada J
Yamauchi H
Suzuki E
et al.
Publication year
Publication venue
IEEE transactions on nanotechnology

External Links

Snippet

A novel resist etch-back process for fabrication of separated-gate four-terminal FinFETs has been investigates. This process enabled co-fabrication of three-terminal (3T) and four- terminal (4T) FinFETs on a same chip. The fabricated 3T-FinFET shows excellent sub …
Continue reading at ieeexplore.ieee.org (other versions)

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