Chang et al., 1998 - Google Patents
An integrated pyroelectric infrared sensor with a PZT thin filmChang et al., 1998
View PDF- Document ID
- 8488451822427108730
- Author
- Chang C
- Tang C
- Publication year
- Publication venue
- Sensors and Actuators A: Physical
External Links
Snippet
In this paper integrated pyroelectric infrared sensors have been made by combining a (Pb (Zr52Ti48) O3, PZT) thin film with an Si JFET. The JFET is used to read out the pyroelectrically generated signal. The relevant sensor parameters, voltage sensitivity and …
- 229910052451 lead zirconate titanate 0 title abstract description 18
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/02—Details
- G01J5/08—Optical features
- G01J5/0803—Optical elements not provided otherwise, e.g. optical manifolds, gratings, holograms, cubic beamsplitters, prisms, particular coatings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/10—Radiation pyrometry using electric radiation detectors
- G01J5/20—Radiation pyrometry using electric radiation detectors using resistors, thermistors, or semi-conductors sensitive to radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/10—Radiation pyrometry using electric radiation detectors
- G01J5/34—Radiation pyrometry using electric radiation detectors using capacitors, e.g. pyroelectric elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/02—Details
- G01J5/04—Casings Mountings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/10—Radiation pyrometry using electric radiation detectors
- G01J5/12—Radiation pyrometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L37/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L37/02—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof using thermal change of dielectric constant, e.g. working above and below Curie point, e.g. pyroelectric devices
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infra-red, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/38—Radiation pyrometry using extension or expansion of solids or fluids
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Chang et al. | An integrated pyroelectric infrared sensor with a PZT thin film | |
Takayama et al. | Preparation and characteristics of pyroelectric infrared sensors made of c‐axis oriented La‐modified PbTi03 thin films | |
US5821598A (en) | Uncooled amorphous YBaCuO thin film infrared detector | |
EP0354369B1 (en) | Infrared detector | |
US5021663A (en) | Infrared detector | |
US5672903A (en) | Uncooled ybacuo thin film infrared detector | |
Gopalan et al. | Mid-infrared pyro-resistive graphene detector on LiNbO3 | |
JPH05206526A (en) | Bolometer and its manufacture | |
Okuyama et al. | PbTiO3 ferroelectric thin film gate fet for infrared detection | |
WO1996024165A9 (en) | UNCOOLED YBaCuO THIN FILM INFRARED DETECTOR | |
Hashimoto et al. | Si monolithic microbolometers of ferroelectric BST thin film combined with readout FET for uncooled infrared image sensor | |
Ignatiev et al. | Pyroelectric, ferroelectric and dielectric properties of Mn and Sb-doped PZT thin films for uncooled IR detectors | |
Joshi et al. | Pyroelectric materials, their properties and applications | |
Choi et al. | Epitaxially grown pyroelectric infrared sensor array for human body detection | |
Chan et al. | Effects of membrane thickness on the pyroelectric properties of LiTaO3 thin film IR detectors | |
US6437331B1 (en) | Bolometer type infrared sensor with material having hysterisis | |
Gray et al. | Semiconducting YBaCuO as infrared-detecting bolometers | |
Zhu et al. | Application of ferroelectric BST thin film prepared by MOD for uncooled infrared sensor of dielectric bolometer mode | |
Cole et al. | High performance infrared detector arrays using thin film microstructures | |
JP3683095B2 (en) | Ferroelectric thin film material, manufacturing method of ferroelectric thin film material, manufacturing method of dielectric bolometer using ferroelectric thin film material, dielectric bolometer, and infrared detection element using the same | |
Okuyama et al. | Pyroelectric Infrared Sensor Using PbTO3 Thin Film | |
Dégardin et al. | Semiconducting amorphous Y-Ba-Cu-O: an attractive material for fast and sensitive thermal sensing in the NIR to THz range | |
Simonne et al. | Pyroelectric properties of a VDF/TrFE-on-silicon sensor | |
CA2212002C (en) | Uncooled ybacuo thin film infrared detector | |
Cheneau et al. | Semiconducting amorphous Y-Ba-Cu-O thin film detectors: Fast room temperature thermal response up to 40 MHz |