Nothing Special   »   [go: up one dir, main page]

Chang et al., 1998 - Google Patents

An integrated pyroelectric infrared sensor with a PZT thin film

Chang et al., 1998

View PDF
Document ID
8488451822427108730
Author
Chang C
Tang C
Publication year
Publication venue
Sensors and Actuators A: Physical

External Links

Snippet

In this paper integrated pyroelectric infrared sensors have been made by combining a (Pb (Zr52Ti48) O3, PZT) thin film with an Si JFET. The JFET is used to read out the pyroelectrically generated signal. The relevant sensor parameters, voltage sensitivity and …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry
    • G01J5/02Details
    • G01J5/08Optical features
    • G01J5/0803Optical elements not provided otherwise, e.g. optical manifolds, gratings, holograms, cubic beamsplitters, prisms, particular coatings
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry
    • G01J5/10Radiation pyrometry using electric radiation detectors
    • G01J5/20Radiation pyrometry using electric radiation detectors using resistors, thermistors, or semi-conductors sensitive to radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry
    • G01J5/10Radiation pyrometry using electric radiation detectors
    • G01J5/34Radiation pyrometry using electric radiation detectors using capacitors, e.g. pyroelectric elements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry
    • G01J5/02Details
    • G01J5/04Casings Mountings
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry
    • G01J5/10Radiation pyrometry using electric radiation detectors
    • G01J5/12Radiation pyrometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L37/00Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L37/02Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof using thermal change of dielectric constant, e.g. working above and below Curie point, e.g. pyroelectric devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09Devices sensitive to infra-red, visible or ultraviolet radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry
    • G01J5/38Radiation pyrometry using extension or expansion of solids or fluids
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details

Similar Documents

Publication Publication Date Title
Chang et al. An integrated pyroelectric infrared sensor with a PZT thin film
Takayama et al. Preparation and characteristics of pyroelectric infrared sensors made of c‐axis oriented La‐modified PbTi03 thin films
US5821598A (en) Uncooled amorphous YBaCuO thin film infrared detector
EP0354369B1 (en) Infrared detector
US5021663A (en) Infrared detector
US5672903A (en) Uncooled ybacuo thin film infrared detector
Gopalan et al. Mid-infrared pyro-resistive graphene detector on LiNbO3
JPH05206526A (en) Bolometer and its manufacture
Okuyama et al. PbTiO3 ferroelectric thin film gate fet for infrared detection
WO1996024165A9 (en) UNCOOLED YBaCuO THIN FILM INFRARED DETECTOR
Hashimoto et al. Si monolithic microbolometers of ferroelectric BST thin film combined with readout FET for uncooled infrared image sensor
Ignatiev et al. Pyroelectric, ferroelectric and dielectric properties of Mn and Sb-doped PZT thin films for uncooled IR detectors
Joshi et al. Pyroelectric materials, their properties and applications
Choi et al. Epitaxially grown pyroelectric infrared sensor array for human body detection
Chan et al. Effects of membrane thickness on the pyroelectric properties of LiTaO3 thin film IR detectors
US6437331B1 (en) Bolometer type infrared sensor with material having hysterisis
Gray et al. Semiconducting YBaCuO as infrared-detecting bolometers
Zhu et al. Application of ferroelectric BST thin film prepared by MOD for uncooled infrared sensor of dielectric bolometer mode
Cole et al. High performance infrared detector arrays using thin film microstructures
JP3683095B2 (en) Ferroelectric thin film material, manufacturing method of ferroelectric thin film material, manufacturing method of dielectric bolometer using ferroelectric thin film material, dielectric bolometer, and infrared detection element using the same
Okuyama et al. Pyroelectric Infrared Sensor Using PbTO3 Thin Film
Dégardin et al. Semiconducting amorphous Y-Ba-Cu-O: an attractive material for fast and sensitive thermal sensing in the NIR to THz range
Simonne et al. Pyroelectric properties of a VDF/TrFE-on-silicon sensor
CA2212002C (en) Uncooled ybacuo thin film infrared detector
Cheneau et al. Semiconducting amorphous Y-Ba-Cu-O thin film detectors: Fast room temperature thermal response up to 40 MHz