Nothing Special   »   [go: up one dir, main page]

Okuyama et al., 1981 - Google Patents

PbTiO3 ferroelectric thin film gate fet for infrared detection

Okuyama et al., 1981

Document ID
274916890172584237
Author
Okuyama M
Matsui Y
Nakano H
Hamakawa Y
Publication year
Publication venue
Ferroelectrics

External Links

Snippet

A field effect transistor with a PbTiO3 ferroelectric thin film gate has been prepared as an infrared sensor which works at room temperature and has an infrared sensitivity in a wide spectral range. PbTiO3 thin film was deposited with rf sputtering at substrate temperatures of …
Continue reading at www.tandfonline.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infra-red, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L37/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L37/02—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof using thermal change of dielectric constant, e.g. working above and below Curie point, e.g. pyroelectric devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/10—Radiation pyrometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry using electric radiation detectors using resistors, thermistors, or semi-conductors sensitive to radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/10—Radiation pyrometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry using electric radiation detectors using capacitors, e.g. pyroelectric elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/02—Details
    • G01J5/04—Casings Mountings
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor

Similar Documents

Publication Publication Date Title
Okuyama et al. PbTiO3 ferroelectric thin film gate fet for infrared detection
US5850098A (en) Uncooled amorphous YBaCuO thin film infrared detector
Liu et al. Pyroelectric detectors and materials
Takayama et al. Preparation and characteristics of pyroelectric infrared sensors made of c‐axis oriented La‐modified PbTi03 thin films
Takayama et al. Pyroelectric linear array infrared sensors made of c‐axis‐oriented La‐modified PbTiO3 thin films
Okuyama et al. Preparation and basic properties of PbTiO3 ferroelectric thin films and their device applications
Whatmore Pyroelectric arrays: ceramics and thin films
Takayama et al. Pyroelectric properties and application to infrared sensors of PbTiO3, PbLaTiO3 and PbZrTiO3 ferroelectric thin films
US5672903A (en) Uncooled ybacuo thin film infrared detector
Verghese et al. Feasibility of infrared imaging arrays using high‐T c superconducting bolometers
WO1996024165A9 (en) UNCOOLED YBaCuO THIN FILM INFRARED DETECTOR
Hashimoto et al. Si monolithic microbolometers of ferroelectric BST thin film combined with readout FET for uncooled infrared image sensor
Okuyama et al. PbTiO3 ferroelectric thin films and their pyroelectric application
Joshi et al. Pyroelectric materials, their properties and applications
US3816750A (en) Pyroelectric detector
Butler et al. Micromachined YBaCuO capacitor structures as uncooled pyroelectric infrared detectors
Jahanzeb et al. Strong pyroelectric response in semiconducting Y-Ba-Cu-O and its application to uncooled infrared detection
Choi et al. Epitaxially grown pyroelectric infrared sensor array for human body detection
US5804823A (en) Bismuth layered structure pyroelectric detectors
Okuyama et al. Integrated pyroelectric infrared sensor using PbTiO3 thin film
Cole et al. High performance infrared detector arrays using thin film microstructures
Fuflyigin et al. Free-standing films of PbSc 0.5 Ta 0.5 O 3 for uncooled infrared detectors
Okuyama et al. Pyroelectric Infrared Sensor Using PbTO3 Thin Film
Okuyama et al. IR-OPFET: infrared sensor using PbTiO3 pyroelectric film
JP3683095B2 (en) Ferroelectric thin film material, manufacturing method of ferroelectric thin film material, manufacturing method of dielectric bolometer using ferroelectric thin film material, dielectric bolometer, and infrared detection element using the same