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Srivastava et al., 2010 - Google Patents

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-$\mu\hbox {m} $ Buffer Thickness by Local Substrate Removal

Srivastava et al., 2010

Document ID
7190589013886910210
Author
Srivastava P
Das J
Visalli D
Van Hove M
Malinowski P
Marcon D
Lenci S
Geens K
Cheng K
Leys M
Decoutere S
Mertens R
Borghs G
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

In this letter, we present a local substrate removal technology (under the source-to-drain region), reminiscent of through-silicon vias and report on the highest ever achieved breakdown voltage (V_\rmBD) of AlGaN/GaN/AlGaN double-heterostructure FETs on a Si …
Continue reading at ieeexplore.ieee.org (other versions)

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