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Van Hove et al., 2013 - Google Patents

Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al} _ {2}{\rm O} _ {3} $ and ${\rm Si} _ {3}{\rm N} _ {4}/{\rm Al} _ {2}{\rm O} …

Van Hove et al., 2013

Document ID
14149565192294260870
Author
Van Hove M
Kang X
Stoffels S
Wellekens D
Ronchi N
Venegas R
Geens K
Decoutere S
Publication year
Publication venue
IEEE transactions on electron devices

External Links

Snippet

Au-free GaN-based metal-insulator-semiconductor high electron-mobility transistors grown on 150-mm Si substrates are reported. The device characteristics for three different processes are compared: an ohmic-first and a gate-first process with Al 2 O 3-only as gate …
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