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Fu et al., 2006 - Google Patents

Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

Fu et al., 2006

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Document ID
7122032705279998949
Author
Fu Y
Yun F
Moon Y
Özgür Ã
Xie J
Ni X
Biyikli N
Morkoc H
Zhou L
Smith D
Inoki C
Kuan T
Publication year
Publication venue
Journal of applied physics

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Snippet

We report on the effectiveness of porous TiN nanonetworks on the reduction of threading dislocations (TDs) in GaN grown by metal-organic vapor-phase epitaxy (MOVPE). The porous TiN networks were formed by in situ annealing of thin-deposited Ti films deposited ex …
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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