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Zang et al., 2007 - Google Patents

Defect reduction by periodic SiNx interlayers in gallium nitride grown on Si (111)

Zang et al., 2007

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Document ID
4578392050982980254
Author
Zang K
Wang Y
Wang L
Chow S
Chua S
Publication year
Publication venue
Journal of applied physics

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Snippet

Periodic Si N x interlayers were employed during the metal-organic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111) substrates. The growth and the evolution of defects were studied in this paper. A reduction of the threading …
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