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Inoue et al., 2013 - Google Patents

Fabrication of bimorph with double Pb [Zr, Ti] O 3 thick films

Inoue et al., 2013

Document ID
642588403518903819
Author
Inoue J
Kanda K
Fujita T
Maenaka K
Publication year
Publication venue
2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy (ISAF/PFM)

External Links

Snippet

This paper reports depositions of double layers of thick Pb (Zr, Ti) O 3 films in order to realize piezoelectric bimorph structures for MEMS (micro electro-mechanical systems) applications. The PZT/PZT bimorph with the total thickness of 5.4 μm, deposited by magnetron sputtering …
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Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/08—Piezo-electric or electrostrictive devices
    • H01L41/09—Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators
    • H01L41/0926—Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H01L41/0973—Membrane type
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/22—Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
    • H01L41/31—Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
    • H01L41/314—Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/16—Selection of materials
    • H01L41/18—Selection of materials for piezo-electric or electrostrictive devices, e.g. bulk piezo-electric crystals
    • H01L41/187—Ceramic compositions, i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials

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