Bourim et al., 2009 - Google Patents
Creep behavior of undoped and La–Nb codoped PZT based micro-piezoactuators for micro-optical modulator applicationsBourim et al., 2009
View PDF- Document ID
- 8198117994201783636
- Author
- Bourim E
- Kim H
- Yang J
- Yang J
- Woo K
- Song J
- Yun S
- Publication year
- Publication venue
- Sensors and Actuators A: Physical
External Links
Snippet
Time-dependent deformation (creep) behaviors of piezoelectric microactuators have been investigated. Position (or gap height) drift of microbridged actuator beam and its displacement amplitude change with time could be attributed to the anelastic behavior of the …
- 229910052451 lead zirconate titanate 0 title abstract description 91
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/16—Selection of materials
- H01L41/18—Selection of materials for piezo-electric or electrostrictive devices, e.g. bulk piezo-electric crystals
- H01L41/187—Ceramic compositions, i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials
- H01L41/1875—Lead based oxides
- H01L41/1876—Lead zirconate titanate based
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/08—Piezo-electric or electrostrictive devices
- H01L41/09—Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators
- H01L41/0926—Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/02—Details
- H01L41/04—Details of piezo-electric or electrostrictive devices
- H01L41/047—Electrodes or electrical connection arrangements
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/22—Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
- H01L41/31—Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
- H01L41/314—Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/22—Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
- H01L41/35—Forming piezo-electric or electrostrictive materials
- H01L41/45—Organic materials
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/22—Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
- H01L41/35—Forming piezo-electric or electrostrictive materials
- H01L41/39—Inorganic materials
- H01L41/43—Inorganic materials by sintering
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Kueppers et al. | PZT thin films for piezoelectric microactuator applications | |
JP5621922B2 (en) | Piezoelectric element and manufacturing method thereof | |
Yeo et al. | Effect of piezoelectric layer thickness and poling conditions on the performance of cantilever piezoelectric energy harvesters on Ni foils | |
Nguyen et al. | Effect of dopants on ferroelectric and piezoelectric properties of lead zirconate titanate thin films on Si substrates | |
Nguyen et al. | Controlling piezoelectric responses in Pb (Zr0. 52Ti0. 48) O3 films through deposition conditions and nanosheet buffer layers on glass | |
Copie et al. | Adsorbate screening of surface charge of microscopic ferroelectric domains in sol–gel PbZr0. 2ti0. 8o3 thin films | |
US9620703B2 (en) | Piezoelectric thin-film element, piezoelectric sensor and vibration generator | |
Bourim et al. | Creep behavior of undoped and La–Nb codoped PZT based micro-piezoactuators for micro-optical modulator applications | |
Hong et al. | Residual stress development in Pb (Zr, Ti) O3/ZrO2/SiO2 stacks for piezoelectric microactuators | |
Dutta et al. | Ferroelectric and Piezoelectric properties of (111) oriented lanthanum modified lead zirconate titanate film | |
Yin et al. | Preparation and characterization of unimorph actuators based on piezoelectric Pb (Zr0. 52Ti0. 48) O3 materials | |
Abergel et al. | Optimized gradient-free PZT thin films for micro-actuators | |
Xiong et al. | Piezoelectric properties of PZT films prepared by the sol–gel method and their application in MEMS | |
Peters et al. | Thermal stress accommodation in dip cast lead zirconate‐titanate ferroelectric films on flexible substrates | |
Kanda et al. | Fabrication and characterization of double-layer Pb (Zr, Ti) O3 thin films for micro-electromechanical systems | |
Osone et al. | Ferroelectric and piezoelectric properties of Pb (ZrxTi1− x) O3 thick films prepared by chemical solution deposition process | |
Le Rhun et al. | Transparent PZT MIM capacitors on glass for piezoelectric transducer applications | |
Cueff et al. | Influence of the crystallographic orientation of Pb (Zr, Ti) O 3 films on the transverse piezoelectric coefficient d 31 | |
Plihon et al. | Printed actuators made with electroactive polymers on flexible substrates | |
Lu et al. | Preparation and characterization of wafer scale lead zirconate titanate film for MEMS application | |
Pan et al. | Domain growth dynamics in PMN-PT ferroelectric thin films | |
Ferri et al. | Ion‐Beam Etching on Nanostructured La 2 Ti 2 O 7 Piezoelectric Thin Films | |
Maiwa et al. | Electrical and electromechanical properties of PbZrO3 thin films prepared by chemical solution deposition | |
Wague et al. | Effects of hot poling treatment on properties and behavior of PZT based piezoelectric actuators | |
Weaver et al. | Electromechanical coupling and temperature-dependent polarization reversal in piezoelectric ceramics |