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Richter et al., 2013 - Google Patents

SiGe on SOI nanowire array TFETs with homo-and heterostructure tunnel junctions

Richter et al., 2013

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Document ID
5094822646570905354
Author
Richter S
Blaeser S
Knoll L
Trellenkamp S
Schäfer A
Hartmann J
Zhao Q
Mantl S
Publication year
Publication venue
2013 14th International Conference on Ultimate Integration on Silicon (ULIS)

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This paper presents experimental results on tunneling field-effect transistors (TFETs) based on SiGe on SOI nanowire arrays. A SiGe-Si heterostructure TFET with a vertical tunneling junction consisting of an in situ doped SiGe source and a Si channel is demonstrated. The …
Continue reading at www.researchgate.net (PDF) (other versions)

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