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Riel et al., 2012 - Google Patents

InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs

Riel et al., 2012

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Document ID
7457260325816306379
Author
Riel H
Moselund K
Bessire C
Björk M
Schenk A
Ghoneim H
Schmid H
Publication year
Publication venue
2012 International Electron Devices Meeting

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In this paper we present vertical tunnel diodes and tunnel FETs (TFETs) based on III-V-Si nanowire heterojunctions. We experimentally demonstrate InAs-Si Esaki tunnel diodes with record high currents of 6 MA/cm 2 at 0.5 V in reverse bias. Furthermore, we have fabricated …
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