Digital Circuit Design Based on the Resonant-Tunneling-Hetero-Junction-Bipolar-Transistor

We present a new parasitic bipolar junction transistor (BJT) enhanced silicon on insulator (SOI) laterally double diffused metal oxide semiconductor (LDMOS), called BJT enhanced LDMOS (BE-LDMOS). The proposed device utilizes the parasitic BJT present in ...

Picosecond switching speeds and folded current-voltage characteristics have made quantum tunneling devices promising alternatives for high-speed and compact VLSI circuit design. This paper describes new bistable digital logic circuit topologies that use ...

Abstract: Progress in multiple-valued logic (MVL) depends much on the development of devices that are inherently suitable for MVL operation. With their multiple stable states, resonant tunneling devices are promising candidates. Although not at a ...