research-article

Crossbar architecture based on 2R complementary resistive switching memory cell

Authors:

D. Deleruyelle,

C. MullerAuthors Info & Claims

NANOARCH '12: Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures

Pages 85 - 92

https://doi.org/10.1145/2765491.2765508

Published: 04 July 2012 Publication History

Abstract

Emerging non-volatile memories (e.g. STT-MRAM, OxRRAM and CBRAM) based on resistive switching are under intense R&D investigation by both academics and industries. They provide high performance such as fast write/read speed, low power and good endurance (e.g. >10¹²) beyond Flash memories. However the conventional access architecture based on 1 transistor + 1 memory cell limits its storage density as the selection transistor should be large enough to ensure enough Current for the switching operation, This paper describes a design of crossbar architecture based on 2R complementary Resistive switching memory cell, This architecture allows fewer selection transistors, and minimum contacts between memory cells and CMOS control circuits, The complementary cell and parallel data sensing mitigate the impact of sneak Currents in the crossbar architecture, We performed transient simulations based on two memory technologies: STT-MRAM and OxRRAM to validate the functionality of this design by using CMOS 65 nm design kit and memory compact models.

References

[1]

N. S. Kim et al., "Leakage current: Moore's law meets the static power", Computer, vol. 36, pp. 68--75, December 2003.

Digital Library

[2]

International Roadmap for semiconductor (ITRS), 2011 ERD Update.

[3]

C. Chappert, A. Fert and F. Nguyen Van Dau, "The emergence of spin electronics in data storage", Nat Mater, vol. 6, pp. 813--823, 2007.

[4]

M. Kund et al., "Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20 nm" IEDM Tech. Dig. pp. 754--757, 2005.

[5]

I. G. Baek et al., "Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application", Procs. of IEEE IEDM, pp. 750--753, December 2005.

[6]

C. J. Lin et al., "45nm Low power CMOS logic compatible embedded SIT MRAM utilizing a reverse-connection 1T/1MTJ cell", Procs. of IEEE IEDM, pp. 279--282, December 2009.

[7]

K. Tsuchida et al., "A 64Mb MRAM with Clamped-Reference and Adequate-Reference Schemes", Proc. of ISSCC, pp. 258--259, 2010.

[8]

W. S. Zhao, et al., "Spin Transfer Torque (STT)-MRAM based Run Time Reconfiguration FPGA circuit ", ACM Trans. Embedded Computing Systems, vol. 9, No. 2, article 14, October 2009.

Digital Library

[9]

S. Chung et al., "Fully integrated 54nm STT-RAM with the smallest bit cell dimension", Proc. of IEDM, pp. 304--307, December 2010.

[10]

Q. Xia et al. "Memristor-CMOS hybrid integrated circuits for reconfigurable logic" Nano letter. vol. 9, pp. 3640--3645, 2009.

[11]

D. C. Worledge et al, "Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions", Applied Physics Letters, vol. 98, pp. 022501. 2, January 2011.

[12]

Y. Chen et al., "Nanoscale molecular-switch crossbar circuits", Nanotechnology, vol. 14, pp. 462--468, March 2003.

[13]

E. Linn et al., "Complementary resistive switches for passive nanocrossbar memories", Nature Materials, vol. 9, pp. 403--406, April 2010.

[14]

N. Sakimura et al., "512Kb Cross-Point-Cell MRAM", Procs. of ISSCC, pp. 278--279, December 2003.

[15]

W. S. Zhao et al., "Cross-Point architecture for spin transfer torque magnetic random memory", arXiv:1202.1782v1, 2012.

[16]

M. Julliere, "Tunneling between ferromagnetic films", Physics Letters A, vol. 54, pp. 225--226, September 1975.

[17]

S. Ikeda et al., "Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature", Appl. Phys. Lett, 93, pp. 082508, August 2008.

[18]

S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki and K. Ando, "Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions", Nat Mater, vol. 3, pp. 868--871, December 2004.

[19]

W. S. Zhao, C. Chappert, V. Javerliac, and J.-P. Noziere, "High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits", IEEE Trans. Magn., vol. 45, pp. 3784--3787, October 2009.

[20]

A. D. Kent and D. L. Stein, "Annular Spin-Transfer Memory Element", IEEE Transactions on Nanotechnology, vol. 10, pp. 129--134, July 2011.

Digital Library

[21]

R. Waser, M. Aono, "Nanoionics-based resistive switching memories", Nature Materials, vol. 6, pp. 833, 2007.

[22]

S. Seo et al., "Reproducible resistance switching in polycrystalline NiO films", Appl. Phys. Lett., vol. 85, pp. 5655, October 2004.

[23]

W. G. Kim et al., "Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide", Procs. of the ESSDERC, pp. 400--403, November 2010.

[24]

H. Y Lee et al., "Low Power and High Speed Bipolar Switching with A Thin Reactive Ti Buffer Layer in Robust HfO2 Based RRAM", Proceedings of the IEEE IEDM 2008, December 2008.

[25]

H. Y. Lee et al., "Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap," IEEE Electron Device Lett., vol. 31, pp. 44--46, January 2010.

[26]

H. S. Abnl et al., "Pairing of cation vacancies and gap-state creation in TiO₂ and HfO₂", Appl. Phys. Lett., vol. 90, pp. 252908--252908-3, June 2007.

[27]

S Tappertzhofen et al., "Capacity based nondestructive readout for complementary resistive switches", Nanotechnology 22, 2011.

[28]

Y. Zhang et al.," A Compact Model of Perpenticular Magnetic Anistropy Magnetic Tunnel Junction", IEEE Trans. on Elect. Dev., vol. 59, pp. 819--826, March 2012.

[29]

S. Ikeda et aI, "A perpendicular-anisotropy CoFeB--MgO magnetic tunnel junction", Nat Mater, vol. 9, pp. 721--724, July 2010.

[30]

H. Aziza, M. Bocquet, J-M. Portal and C. Muller, "Evaluation of OxRAM Cell Variability Impact on Memory Performances through Electrical Simulations", Non-Volatile Memory Technology Symposium (NVMTS), January 2011.

[31]

H. Aziza, M. Bocquet, J-M. Portal and C. Muller, "Bipolar OxRRAM memory array reliability evaluation based on fault injection", Design and Test Workshop (IDT), December 2011.

[32]

C. Cagli et al., "Experimental aJld Theoretical Study of Electrode Effects in HfO2 based RRAM", accepted in IEEE IEDM Tech. Dig, 2011.

[33]

W. S. Zhao et al., "Design considerations and strategies for high-reliable STT-MRAM", Microelectronics Reliability, Vol. 51, pp. 1454--1458, 2011.

Cited By

Ryu JKwon K(2016)A low power selector-less crossbar array with complementary resistive-switching memory2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)10.1109/EDSSC.2016.7785279(346-349)Online publication date: Aug-2016
https://doi.org/10.1109/EDSSC.2016.7785279
Aziza HBocquet MMoreau MPortal J(2015)A Built-In Self-Test Structure (BIST) for Resistive RAMs characterization: Application to bipolar OxRRAMSolid-State Electronics10.1016/j.sse.2014.09.005103(73-78)Online publication date: Jan-2015
https://doi.org/10.1016/j.sse.2014.09.005
Bocquet MAziza HZhao WZhang YOnkaraiah SMuller CReyboz MDeleruyelle DClermidy FPortal J(2014)Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)Journal of Low Power Electronics and Applications10.3390/jlpea40100014:1(1-14)Online publication date: 9-Jan-2014
https://doi.org/10.3390/jlpea4010001
Show More Cited By

Index Terms

Crossbar architecture based on 2R complementary resistive switching memory cell
1. Applied computing
  1. Physical sciences and engineering
    1. Electronics
2. Hardware
  1. Hardware validation
  2. Integrated circuits
    1. Interconnect

Recommendations

Wear leveling for crossbar resistive memory
DAC '18: Proceedings of the 55th Annual Design Automation Conference

Resistive Memory (ReRAM) is an emerging non-volatile memory technology that has many advantages over conventional DRAM. ReRAM crossbar has the smallest 4F² planar cell size and thus is widely adopted for constructing dense memory with large capacity. ...
Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention
ISLPED '12: Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design

As one of the newly introduced resistive random access memory (ReRAM) devices, this paper has shown an in-depth study of conductive-bridging random access memory (CBRAM) for non-volatile memory (NVM) computing. Firstly, a CBRAM-crossbar based memory is ...
Minimal Disturbed Bits in Writing Resistive Crossbar Memories
NANOARCH '18: Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures

Resistive memories are promising candidates for non-volatile memories. Write disturb is one of problems that facing this kind of memories. In this paper, the write disturb problem is mathematically formulated in terms of the bias parameters and ...

Comments

Please enable JavaScript to view thecomments powered by Disqus.

Information & Contributors

Information

Published In

cover image ACM Conferences

NANOARCH '12: Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures

July 2012

243 pages

ISBN:9781450316712

DOI:10.1145/2765491

General Chair:
Csaba Andras Moritz
UMass Amherst and BlueRISC

Copyright © 2012 ACM.

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

Sponsors

Publisher

Association for Computing Machinery

New York, NY, United States

Publication History

Published: 04 July 2012

Permissions

Request permissions for this article.

Request Permissions

Check for updates

Author Tags

Qualifiers

Research-article

Conference

NANOARCH '12

Sponsor:

NANOARCH '12: IEEE/ACM International Symposium on Nanoscale Architectures

July 4 - 6, 2012

Amsterdam, The Netherlands

Acceptance Rates

Overall Acceptance Rate 55 of 87 submissions, 63%

Contributors

Other Metrics

View Article Metrics

Bibliometrics & Citations

Bibliometrics

Article Metrics

5
Total Citations
View Citations
64
Total Downloads

Downloads (Last 12 months)2
Downloads (Last 6 weeks)0

Reflects downloads up to 28 Nov 2024

Other Metrics

View Author Metrics

Citations

Cited By

Ryu JKwon K(2016)A low power selector-less crossbar array with complementary resistive-switching memory2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)10.1109/EDSSC.2016.7785279(346-349)Online publication date: Aug-2016
https://doi.org/10.1109/EDSSC.2016.7785279
Aziza HBocquet MMoreau MPortal J(2015)A Built-In Self-Test Structure (BIST) for Resistive RAMs characterization: Application to bipolar OxRRAMSolid-State Electronics10.1016/j.sse.2014.09.005103(73-78)Online publication date: Jan-2015
https://doi.org/10.1016/j.sse.2014.09.005
Bocquet MAziza HZhao WZhang YOnkaraiah SMuller CReyboz MDeleruyelle DClermidy FPortal J(2014)Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)Journal of Low Power Electronics and Applications10.3390/jlpea40100014:1(1-14)Online publication date: 9-Jan-2014
https://doi.org/10.3390/jlpea4010001
Aziza HBocquet MMoreau MPortal J(2013)Single-ended sense amplifier robustness evaluation for OxRRAM technology2013 8th IEEE Design and Test Symposium10.1109/IDT.2013.6727097(1-5)Online publication date: Dec-2013
https://doi.org/10.1109/IDT.2013.6727097
Bocquet MDeleruyelle DAziza HMuller CPortal J(2013)Compact modeling solutions for OxRAM memories2013 IEEE Faible Tension Faible Consommation10.1109/FTFC.2013.6577779(1-4)Online publication date: Jun-2013
https://doi.org/10.1109/FTFC.2013.6577779

View Options

Login options

Check if you have access through your login credentials or your institution to get full access on this article.

Full Access

Get this Publication

View options

PDF

View or Download as a PDF file.

eReader

View online with eReader.

Media

Figures

Other

Tables

View Table of Contents