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A statistical gate delay model for intra-chip and inter-chip variabilities

Published: 21 January 2003 Publication History

Abstract

This paper proposes a model to calculate statistical gate-delay variation caused by intra-chip and inter-chip variabilities. Our model consists of a statistical transistor model and a gate-delay model. We present a modeling and extracting method of transistor characteristics for the intra-chip variability and the inter-chip variability. In the modeling of the intra-chip variability, it is important to consider a gate-size dependence by which the amount of intra-chip variation is affected. This effect is not captured in a statistical delay analysis reported so far. Our gate-delay model characterizes a statistical gate delay variation using a response surface method (RSM) according to the intra-chip and inter-chip variability of each transistor in a gate. We evaluate the accuracy of our model, and we show some simulated results of a circuit delay variation characterized by the measured variances of transistor currents.

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    cover image ACM Conferences
    ASP-DAC '03: Proceedings of the 2003 Asia and South Pacific Design Automation Conference
    January 2003
    865 pages
    ISBN:0780376609
    DOI:10.1145/1119772
    Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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    Published: 21 January 2003

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    • (2013)Modelling and Analysis of Manufacturing Variability Effects from Process to Architectural LevelIntegrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation10.1007/978-3-642-36157-9_2(11-20)Online publication date: 2013
    • (2012)High-performance low-leakage regions of nano-scaled CMOS digital gates under variations of threshold voltage and mobilityJournal of Zhejiang University SCIENCE C10.1631/jzus.C110027313:6(460-471)Online publication date: 2-Jun-2012
    • (2012)A dynamic method for efficient random mismatch characterization of standard cellsProceedings of the International Conference on Computer-Aided Design10.1145/2429384.2429419(180-186)Online publication date: 5-Nov-2012
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    • (2009)CMOS logic gate performance variability related to transistor network arrangementsMicroelectronics Reliability10.1016/j.microrel.2009.07.02349:9-11(977-981)Online publication date: Sep-2009
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