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Evaluation of the N- and La-induced defects in the high-κ gate stack using low frequency noise characterization

Authors:

H. Park,

M. Shur,

G. BersukerAuthors Info & Claims

Microelectronic Engineering, Volume 88, Issue 7

Pages 1255 - 1258

https://doi.org/10.1016/j.mee.2011.03.109

Published: 01 July 2011 Publication History

Abstract

Low frequency noise (LFN) characterization was performed on the HfSiON gate stacks fabricated with the SiON interfacial layers (ILs) and a La cap layer. The LFN data identified N and La related defects located in the IL/HK region.

References

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Published In

Microelectronic Engineering Volume 88, Issue 7

July, 2011

624 pages

ISSN:0167-9317

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Elsevier Science Ltd.

United Kingdom

Publication History

Published: 01 July 2011

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Abstract

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Role of lanthanum in the gate stack: Co-sputtered TaLaN metal gates on Hf-based dielectrics

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Processing and evaluation of metal gate/high-κ/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO₂ and HfO₂ as high-κ dielectric