Nothing Special   »   [go: up one dir, main page]

skip to main content
10.1145/2765491.2765509acmconferencesArticle/Chapter ViewAbstractPublication PagesnanoarchConference Proceedingsconference-collections
research-article

A Monte Carlo analysis of a write method used in passive nanoelectronic crossbars

Published: 04 July 2012 Publication History

Abstract

The performance of a method for robustly writing conductive states into resistive switches is analyzed. The focus is set on the variability of the conductance distribution which has a strong impact on the signal margin and the robustness of the circuit performance. In order to be able to capture cycle-to-cycle as well as device-to-device variability an existing device model for ECM cells was extended and prepared to be executable on standard circuit simulation platforms. The ECM devices were embedded into a passive crossbar whereby electrical worst case conditions were identified by Monte Carlo simulations. Under the constraint of specified signal margins to be maintained for the read operation the underlying write circuit was optimized.

References

[1]
ITRS roadmap, http://www.itrs.net
[2]
S. Tanachutiwat, M. Liu, W. Wang, "FPGA based on Integration of CMOS and RRAM", IEEE Trans. On Very large Scale Integration (VLSI) Systems, Vol. 19, No. 11, pp. 2023--2032, Nov. 2011
[3]
T. Driscaoll, J. Quinn, S. Klein, H. T. Kim, B. J. Kim, Y. V. Pershin, M. DiVentra, D. N. Basov, "Memristive Adaptive Filters", Applied Physics Letters 97, pp, 2010
[4]
A. Heittmann, T. G. Noll, "Limits of Writing Multivalued Resistances in Passive Nanoelectronic Crossbars Used in Neuronmorphic Circuits", Accepted for Presentation, GLSVLSI 2012, Salt Lake City, Utah, USA, 3--4. May 2012
[5]
S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder and W. Lu, "Nanoscale memristor device as synapse in neuromorphic systems", Nano Lett. pp. 1297--1301, 2010.
[6]
G. Snider, "Self-organized computation with unreliable, memristive nanodevices", Nanotechnology, vol. 18, no. 36, pp. 1--13, 2007.
[7]
A. Heittmann, T. G. Noll, "Sensitivity of neuromorphic circuits using nanoelectronic resistive switches to pulse synchronization", in Proc. ACM GLSVLSI, pp. 375--378, 2011.
[8]
T. Hasegawa, et. al., "Learning Abilites Achieved by a Single Solid-State Atomic Switch", Advanced Materials, Vol. 22, Iss. 16, 9 Feb. 2010.
[9]
M. Versace, B. Chandler, "MoNETA: A Mind Made from Memristors", IEEE Spectrum, Cover page fearured article, December 2010.
[10]
S. Yu, Y. Wu, R. Jeyasingh, D. Kuzum, H.-S. P. Wong, "An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation", IEEE Transactions on Electron Devices, Vol. 58, No. 8, pp 2729--2737, August 2011
[11]
D. Strukov, G. Snider, D. Steward, R. Williams, "The Missing Memristor Found", Nature 53, 80, 2008.
[12]
E. Linn, R. Rosezin, C. Kügeler, R. Waser, "Complementary Resistive Switches for Passive Nanocrossbar Memories", Nature Materials 9, pp 403--406, 2010
[13]
A. Flocke, T. G. Noll, C. Kügeler, C. Nauenheim, R. Waser. "A Fundamental Analysis of Nano-Crossbars with Non-Linear Switching Materials and its Impact on TiO2 as a Resistive Layer". 8th IEEE Conference on Nanotechnology, pages 319--322, 2008.
[14]
A. Flocke, T. G. Noll, "Fundamental Analysis of Write-Operations in Resistive Crossbar Arrays", nanoelectronic days 2008
[15]
An Chen; Ming-Ren Lin;, "Variability of resistive switching memories and its impact on crossbar array performance, " Reliability Physics Symposium (IRPS), 2011 IEEE International, vol., no., pp. MY.7.1--MY.7.4, 10--14 April 2011
[16]
R. Soni, P. Meuffels, G. Staikov, R. Weng, C. Kügeler, A. Petraru, M. Hambe, R. Waser, H. Kohlstedt, "On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices", Journal of Applied Physics 110, 054509, 2011
[17]
F. Alibart, L. Gao, B. Hoskins, D. Strukov: "High-Precision Tuning of State for Memristive Devices by Adaptable Variation-Tolerant Algorithm", 2011
[18]
W. Yi, F. Perner, M. S. Qureshi, H. Abdalla, M. D. Pickett, J. J. Yang, M.-X. M. Zhangm G. Medeiros-Ribeiro, S. Williams:"Feedback write scheme for memristive switching devices", Applied Physics A 102, pp 973--982, 2011
[19]
N. Papandreou, H. Pozidis, A. Pantazi, A. Sebastian, M. Breitwisch, C. Lam, E. Eleftheriou,"Programming Algorithms for Multilevel Phase-Change Memory", Proc. IEEE International Symposium on Circuits and Systems, pp. 329--332, May 2011
[20]
S. Shin, K. Kim, and S.-M. Kang, "Compact Models for Memristors Based on Charge-Flux Constitutive Relationships," IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 29, no. 4, pp. 590--598, 2010.
[21]
M. D. Pickett, D. B. Strukov, J. L. Borghetti, J. J. Yang, G. S. Snider, D. R. Stewart, R. S. Williams, "Switching dynamics in titanium dioxide memristive devices", Journal of Applied Physics 106, pp, 2009
[22]
H. Abdalla, M. D. Pickett, "SPICE Modeling of Memristors", IEEE International Symposium on Circuits and Systems (ISCAS 20 11), pp 1832--1835, May 2011
[23]
X. Guan, S. yu, H.-S. P. Wong,"On the Switching Parameter Variation of Meta-Oxide RRAM - Part I: Physical Modeling and Simulation Methodology", IEEE Transactions on Electron Devices, Vol. 59, No. 4, pp. 1172--1182, Apri 2012
[24]
S. Yu, X. Guan, H.-S. P. Wong, "On the Switching Parameter Variation of Metal Oxide RRAM- Part II: Model Corrobation and Device Design Strategy", IEEE Transactions on Electron Devices, Vol. 59, No. 4, pp. 1183--1188, April 2012
[25]
R. Waser, "Electrochemical and Thermochemical Memories", IEDM, pp 1--4, 2008.
[26]
Waser, R., Dittmann, R., Staikov, G. and Szot, K. (2009), Redox-Based Resistive Switching Memories -- Nanoionic Mechanisms, Prospects, and Challenges. Adv. Mater., 21: 2632--2663.
[27]
S. Menzel, U. Böttger, and R. Waser, "Simulation of Multilevel Switching in Electrochemical Metallization Memory Cells", Journal of Applied Physics Vol. 111, pp. 014501-014501-5, Jan. 2012
[28]
J. G. Simmons, "Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film", Journal of Applied Physics, Vol. 34, No. 6, pp 1793--1803, June 1963
[29]
B. Meng, W. H. Weinberg, "Dynamical Monte Carlo studies of molecular beam epitaxial growth models: interfacial scaling and morphology", Surface Science 364, pp. 151--163, 1996
[30]
Ahmed, E.; Rose, J.;, "The effect of LUT and cluster size on deep-submicron FPGA performance and density," Very Large Scale Integration (VLSI) Systems, IEEE Transactions on, vol. 12, no. 3, pp. 288--298, March 2004

Cited By

View all
  • (2017)Mixing circuit based on neural associative memories and nanoelectronic 1S1R cells2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)10.1109/NANOARCH.2017.8053707(119-124)Online publication date: Jul-2017
  • (2014)Variability analysis of a hybrid CMOS/RS nanoelectronic calibration circuit2014 IEEE International Symposium on Circuits and Systems (ISCAS)10.1109/ISCAS.2014.6865470(1656-1659)Online publication date: Jun-2014
  • (2013)Modeling variability and irreproducibility of nanoelectronic resistive switches for circuit simulation2013 18th Asia and South Pacific Design Automation Conference (ASP-DAC)10.1109/ASPDAC.2013.6509646(503-508)Online publication date: Jan-2013

Index Terms

  1. A Monte Carlo analysis of a write method used in passive nanoelectronic crossbars

        Recommendations

        Comments

        Please enable JavaScript to view thecomments powered by Disqus.

        Information & Contributors

        Information

        Published In

        cover image ACM Conferences
        NANOARCH '12: Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures
        July 2012
        243 pages
        ISBN:9781450316712
        DOI:10.1145/2765491
        Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

        Sponsors

        Publisher

        Association for Computing Machinery

        New York, NY, United States

        Publication History

        Published: 04 July 2012

        Permissions

        Request permissions for this article.

        Check for updates

        Author Tags

        1. Monte Carlo simulation
        2. circuit simulation
        3. electrochemical metallization
        4. memristor
        5. nanoelectronics
        6. passive crossbar
        7. resistive switch
        8. signal margin
        9. variability
        10. write operation

        Qualifiers

        • Research-article

        Conference

        NANOARCH '12
        Sponsor:

        Acceptance Rates

        Overall Acceptance Rate 55 of 87 submissions, 63%

        Contributors

        Other Metrics

        Bibliometrics & Citations

        Bibliometrics

        Article Metrics

        • Downloads (Last 12 months)0
        • Downloads (Last 6 weeks)0
        Reflects downloads up to 26 Nov 2024

        Other Metrics

        Citations

        Cited By

        View all
        • (2017)Mixing circuit based on neural associative memories and nanoelectronic 1S1R cells2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)10.1109/NANOARCH.2017.8053707(119-124)Online publication date: Jul-2017
        • (2014)Variability analysis of a hybrid CMOS/RS nanoelectronic calibration circuit2014 IEEE International Symposium on Circuits and Systems (ISCAS)10.1109/ISCAS.2014.6865470(1656-1659)Online publication date: Jun-2014
        • (2013)Modeling variability and irreproducibility of nanoelectronic resistive switches for circuit simulation2013 18th Asia and South Pacific Design Automation Conference (ASP-DAC)10.1109/ASPDAC.2013.6509646(503-508)Online publication date: Jan-2013

        View Options

        Login options

        View options

        PDF

        View or Download as a PDF file.

        PDF

        eReader

        View online with eReader.

        eReader

        Media

        Figures

        Other

        Tables

        Share

        Share

        Share this Publication link

        Share on social media