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Power constrained design optimization of analog circuits based on physical gm/ID characteristics

Published: 28 August 2006 Publication History

Abstract

This paper presents a transistor optimization methodology for low-power analog integrated CMOS circuits, relying on the physics-based gm/ID characteristics as a design optimization guide. Our custom layout tool LIT implements and uses the ACM MOS compact model in the optimization loop. The methodology is implemented for automation within LIT and exploits all design space through the simulated annealing optimization process, providing solutions close to optimum with a single technology-dependent curve and accurate expressions for transconductance and current valid in all operation regions. The compact model itself contributes to convergence and to optimized implementations, since it has analytic expressions which are continuous in all current regimes, including weak and moderate inversion. The advantage of constraining the optimization within a power budget is of great importance for low-power CMOS. As examples we show the optimization results obtained with LIT, resulting in significant power savings, for the design of a two-stage Miller operational amplifier.

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Cited By

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  • (2021)Design framework for inverter cascode transimpedance amplifier using Gm/ID based PSO applying design equationsAEU - International Journal of Electronics and Communications10.1016/j.aeue.2021.153985142(153985)Online publication date: Dec-2021
  • (2021)Systematic approach for IG-FinFET amplifier design using gm/Id methodAnalog Integrated Circuits and Signal Processing10.1007/s10470-021-01917-9Online publication date: 4-Aug-2021
  • (2015)Wideband Low Noise Variable Gain AmplifierProceedings of the 28th Symposium on Integrated Circuits and Systems Design10.1145/2800986.2801029(1-6)Online publication date: 31-Aug-2015
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        cover image ACM Conferences
        SBCCI '06: Proceedings of the 19th annual symposium on Integrated circuits and systems design
        August 2006
        248 pages
        ISBN:1595934790
        DOI:10.1145/1150343
        Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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        Publication History

        Published: 28 August 2006

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        Author Tags

        1. analog design
        2. simulated annealing
        3. synthesis

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        SBCCI06
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        SBCCI06: 19th Symposium on Integrated Circuits and System Design
        August 28 - September 1, 2006
        MG, Ouro Preto, Brazil

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        View all
        • (2021)Design framework for inverter cascode transimpedance amplifier using Gm/ID based PSO applying design equationsAEU - International Journal of Electronics and Communications10.1016/j.aeue.2021.153985142(153985)Online publication date: Dec-2021
        • (2021)Systematic approach for IG-FinFET amplifier design using gm/Id methodAnalog Integrated Circuits and Signal Processing10.1007/s10470-021-01917-9Online publication date: 4-Aug-2021
        • (2015)Wideband Low Noise Variable Gain AmplifierProceedings of the 28th Symposium on Integrated Circuits and Systems Design10.1145/2800986.2801029(1-6)Online publication date: 31-Aug-2015
        • (2014)An All-Inversion-Region gm/ID Based Design Methodology for Radiofrequency Blocks in CMOS Nanometer TechnologiesNanotechnology10.4018/978-1-4666-5125-8.ch038(874-897)Online publication date: 2014
        • (2014)A modified gm/ID design methodology for deeply scaled CMOS technologiesAnalog Integrated Circuits and Signal Processing10.1007/s10470-013-0166-z78:3(771-784)Online publication date: 1-Mar-2014
        • (2012)An All-Inversion-Region gm/ID Based Design Methodology for Radiofrequency Blocks in CMOS Nanometer TechnologiesWireless Radio-Frequency Standards and System Design10.4018/978-1-4666-0083-6.ch002(15-39)Online publication date: 2012
        • (2012)Empirical model for the transconductance-current dependence of short-channel MOSFETs2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)10.1109/MWSCAS.2012.6292014(290-293)Online publication date: Aug-2012

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