Article

A Simplified Methodology for the Extraction of the ACM MOST Model Parameters

Authors:

Rafael M. Coitinho,

Luís H. Spiller,

Márcio C. Schneider,

Carlos Galup-MontoroAuthors Info & Claims

SBCCI '01: Proceedings of the 14th symposium on Integrated circuits and systems design

Page 136

Published: 10 September 2001 Publication History

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Abstract

Abstract: The ACM model is a powerful tool for the simulation of MOS transistors. Unlike most of the available models, it presents simple and precise equations, allied to a small number but meaningful Physical parameters. This article presents a simplified methodology for extracting the parameters of the ACM model. Unlike usual methods for device characterization, which require the availability of expensive equipment, this methodology is based on simulation. Simple and low cost, it can be reproduced easily by those who plan to use the ACM model but do not know its parameters for a given process. In this work, the ACM parameters were extracted from the BSIM 3 parameters available for a 0.8 µm technology.

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Girardi ABampi SCoelho CJacobi RBecker J(2006)Power constrained design optimization of analog circuits based on physical gm/ID characteristicsProceedings of the 19th annual symposium on Integrated circuits and systems design10.1145/1150343.1150370(89-93)Online publication date: 28-Aug-2006
https://dl.acm.org/doi/10.1145/1150343.1150370
Santana EFerreira NDorea CCunha AGalup-Montoro CBampi SOrailoglu A(2005)On the adequate transistor modeling for optimal design of CMOS OTAProceedings of the 18th annual symposium on Integrated circuits and system design10.1145/1081081.1081095(27-31)Online publication date: 4-Sep-2005
https://dl.acm.org/doi/10.1145/1081081.1081095

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SBCCI '01: Proceedings of the 14th symposium on Integrated circuits and systems design

September 2001

ISBN:0769513336

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IEEE Computer Society

United States

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Published: 10 September 2001

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SBCCI01

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SIGDA

SBCCI01: Symposium on Integrated Circuits and Systems Design

September 10 - 15, 2001

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Overall Acceptance Rate 133 of 347 submissions, 38%

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Girardi ABampi SCoelho CJacobi RBecker J(2006)Power constrained design optimization of analog circuits based on physical gm/ID characteristicsProceedings of the 19th annual symposium on Integrated circuits and systems design10.1145/1150343.1150370(89-93)Online publication date: 28-Aug-2006
https://dl.acm.org/doi/10.1145/1150343.1150370
Santana EFerreira NDorea CCunha AGalup-Montoro CBampi SOrailoglu A(2005)On the adequate transistor modeling for optimal design of CMOS OTAProceedings of the 18th annual symposium on Integrated circuits and system design10.1145/1081081.1081095(27-31)Online publication date: 4-Sep-2005
https://dl.acm.org/doi/10.1145/1081081.1081095

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Efficient methodology to extract interface traps parameters for TCAD simulations

Extraction of BJT model parameters using optimization method

Optimized Extraction of MOS Model Parameters

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