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Cor Claeys
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2010 – 2019
- 2019
- [c4]Eddy Simoen, Alberto Vinicius Oliveira, Anabela Veloso, Adrian Vaisman Chasin, Romain Ritzenthaler, Hans Mertens, Naoto Horiguchi, Cor Claeys:
Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors. ASICON 2019: 1-4 - 2016
- [j17]Ru Huang, Hiroshi Iwai, Cor Claeys, Simon Deleonibus, Runsheng Wang:
Editor's note. Sci. China Inf. Sci. 59(6): 060401:1 (2016) - 2014
- [j16]Maria Glória Caño de Andrade
, João Antonio Martino
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectron. Reliab. 54(11): 2349-2354 (2014) - 2013
- [j15]N. Lukyanchikova, N. Garbar, Valeriya Kudina
Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry. Microelectron. Reliab. 53(3): 394-399 (2013) - 2012
- [j14]Valeria Kilchytska
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. Microelectron. Reliab. 52(1): 118-123 (2012) - [j13]Renan Trevisoli Doria
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. Microelectron. Reliab. 52(3): 519-524 (2012) - [c3]Tommaso Romeo, Luigi Pantisano, Eddy Simoen, Raymond Krom, Mitsuhiro Togo
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs. ESSDERC 2012: 330-333 - [c2]Eddy Simoen, Marc Aoulaiche, Anabela Veloso, M. Jurczak, Cor Claeys, L. Mendes Almeida, Maria Glória Caño de Andrade, A. Luque Rodriguez, J. A. Jimenez Tejada, Christian Caillat, Pierre Fazan:
On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs. ESSDERC 2012: 338-341
2000 – 2009
- 2007
- [j12]Paula Ghedini Der Agopian, João Antonio Martino
Study of the linear kink effect in PD SOI nMOSFETs. Microelectron. J. 38(1): 114-119 (2007) - [j11]Paolo Srinivasan, Felice Crupi, Eddy Simoen, Paolo Magnone
Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks. Microelectron. Reliab. 47(4-5): 501-504 (2007) - [j10]Kerem Akarvardar, Abdelkarim Mercha, Eddy Simoen, Vaidyanathan Subramanian, Cor Claeys, Pierre Gentil, Sorin Cristoloveanu:
High-temperature performance of state-of-the-art triple-gate transistors. Microelectron. Reliab. 47(12): 2065-2069 (2007) - 2006
- [j9]Paula Ghedini Der Agopian, João Antonio Martino
Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS. Microelectron. J. 37(8): 681-685 (2006) - [j8]L. M. Camillo, João Antonio Martino
The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs. Microelectron. J. 37(9): 952-957 (2006) - [j7]Joan Marc Rafí
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. Microelectron. Reliab. 46(9-11): 1657-1663 (2006) - [j6]Kiyoteru Hayama, Kenichiro Takakura, K. Shigaki, Hidenori Ohyama, Joan Marc Rafí
Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. Microelectron. Reliab. 46(9-11): 1731-1735 (2006) - 2005
- [j5]Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, S. Kuboyama, S. Matsuda, Joan Marc Rafí
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs. Microelectron. Reliab. 45(9-11): 1376-1381 (2005) - 2004
- [j4]Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, Abdelkarim Mercha, Eddy Simoen, Cor Claeys, Joan Marc Rafí
Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation. Microelectron. Reliab. 44(9-11): 1721-1726 (2004) - [c1]Cor Claeys:
Technological Challenges of Advanced CMOS Processing and Their Impact on Design Aspects. VLSI Design 2004: 275- - 2001
- [j3]Hidenori Ohyama, Eddy Simoen, S. Kuroda, Cor Claeys, Y. Takami, T. Hakata, K. Kobayashi, M. Nakabayashi, Hiromi Sunaga:
Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle. Microelectron. Reliab. 41(1): 79-85 (2001) - [j2]M. Nakabayashi, Hidenori Ohyama, Eddy Simoen, M. Ikegami, Cor Claeys, K. Kobayashi, M. Yoneoka, K. Miyahara:
Reliability of polycrystalline silicon thin film resistors. Microelectron. Reliab. 41(9-10): 1341-1346 (2001) - [j1]Hidenori Ohyama, M. Nakabayashi, Eddy Simoen, Cor Claeys, T. Tanaka, T. Hirao, S. Onada, K. Kobayashi:
Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation. Microelectron. Reliab. 41(9-10): 1443-1448 (2001)
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