In this work, we study the effect of high-energy neutrons on strained MuGFETs and MOSFETs and compare them with non-strained devices fabricated in the same ...
A comparative investigation of high-energy neutrons effect on strained and non-strained devices with different geometries is presented.
High-energy neutrons effect on strained and non-strained SO MuGFETs and planar MOSFETs. Author: Kilchytska, V. Alvarado, J ; Put, Sofie ; Collaert, Nadine ...
A comparative investigation of high-energy neutrons effect on strained and non-strained devices with different geometries is presented. Both single-gate planar ...
A comparative investigation of high-energy neutrons effect on strained and non-strained devices with different geometries is presented.
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. V. Kilchytska, J. Alvarado, S. Put, N. Collaert, E. Simoen, C ...
Oct 22, 2024 · We demonstrate that high-energy neutrons result in total-dose effects largely similar to those caused by γ- and proton-irradiations. It is shown ...
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. Microelectron. Reliab. 52(1): 118-123 (2012). [+][–]. Coauthor ...
High-energy neutrons effect on strained and non-strained SO MuGFETs and planar MOSFETs . Kilchytska, V.; Alvarado, J.; Put, Sofie; Collaert, Nadine; Simoen ...
The impact of neutron irradiation is directly related to the competition between the generation of interface traps, which are beneficial to reduce parasitic ...